
Kin Chan Chen
Examiner (ID: 4953)
| Most Active Art Unit | 1765 |
| Art Unit(s) | 1792, 1765 |
| Total Applications | 758 |
| Issued Applications | 583 |
| Pending Applications | 32 |
| Abandoned Applications | 143 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 6306885
[patent_doc_number] => 20020094694
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-07-18
[patent_title] => 'Chemically enhanced focused ion beam micro-machining of copper'
[patent_app_type] => new
[patent_app_number] => 09/871541
[patent_app_country] => US
[patent_app_date] => 2001-05-31
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
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[patent_no_of_words] => 3897
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[pdf_file] => publications/A1/0094/20020094694.pdf
[firstpage_image] =>[orig_patent_app_number] => 09871541
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/871541 | Chemically enhanced focused ion beam micro-machining of copper | May 30, 2001 | Issued |
Array
(
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[patent_doc_number] => 20020182869
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[patent_kind] => A1
[patent_issue_date] => 2002-12-05
[patent_title] => 'METHOD FOR FORMING DUAL-DAMASCENE INTERCONNECT STRUCTURE'
[patent_app_type] => new
[patent_app_number] => 09/870527
[patent_app_country] => US
[patent_app_date] => 2001-05-31
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/870527 | Method for forming dual-damascene interconnect structure | May 30, 2001 | Issued |
Array
(
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[patent_doc_number] => 20020045353
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-04-18
[patent_title] => 'Method for manufacturing semiconductor device using octafluorobutene etching gas and semiconductor device manufactured thereby'
[patent_app_type] => new
[patent_app_number] => 09/865585
[patent_app_country] => US
[patent_app_date] => 2001-05-29
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0045/20020045353.pdf
[firstpage_image] =>[orig_patent_app_number] => 09865585
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/865585 | Method for manufacturing semiconductor device using octafluorobutene etching gas and semiconductor device manufactured thereby | May 28, 2001 | Abandoned |
Array
(
[id] => 6883663
[patent_doc_number] => 20010037816
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-11-08
[patent_title] => 'Delivery of dissolved ozone'
[patent_app_type] => new
[patent_app_number] => 09/864482
[patent_app_country] => US
[patent_app_date] => 2001-05-25
[patent_effective_date] => 0000-00-00
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Array
(
[id] => 6883663
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[patent_title] => 'Delivery of dissolved ozone'
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Array
(
[id] => 6425524
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[patent_issue_date] => 2002-11-28
[patent_title] => 'Structure and method to preserve STI during etching'
[patent_app_type] => new
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/864974 | Structure and method to preserve STI during etching | May 23, 2001 | Issued |
Array
(
[id] => 5885390
[patent_doc_number] => 20020011407
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[patent_issue_date] => 2002-01-31
[patent_title] => 'Plasma etching method'
[patent_app_type] => new
[patent_app_number] => 09/858860
[patent_app_country] => US
[patent_app_date] => 2001-05-16
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[pdf_file] => publications/A1/0011/20020011407.pdf
[firstpage_image] =>[orig_patent_app_number] => 09858860
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/858860 | Plasma etching at reduced pressure | May 15, 2001 | Issued |
Array
(
[id] => 7964349
[patent_doc_number] => 06680252
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2004-01-20
[patent_title] => 'Method for planarizing barc layer in dual damascene process'
[patent_app_type] => B2
[patent_app_number] => 09/854966
[patent_app_country] => US
[patent_app_date] => 2001-05-15
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/680/06680252.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/854966 | Method for planarizing barc layer in dual damascene process | May 14, 2001 | Issued |
Array
(
[id] => 6919970
[patent_doc_number] => 20010027743
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-10-11
[patent_title] => 'Process for preparing defect free silicon crystals which allows for variability in process conditions'
[patent_app_type] => new
[patent_app_number] => 09/853232
[patent_app_country] => US
[patent_app_date] => 2001-05-11
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[pdf_file] => publications/A1/0027/20010027743.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/853232 | Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects | May 10, 2001 | Issued |
Array
(
[id] => 7093255
[patent_doc_number] => 20010034133
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[patent_kind] => A1
[patent_issue_date] => 2001-10-25
[patent_title] => 'Method of fabricating a DRAM cell configuration'
[patent_app_type] => new
[patent_app_number] => 09/845406
[patent_app_country] => US
[patent_app_date] => 2001-04-30
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/845406 | Method of fabricating a DRAM cell configuration | Apr 29, 2001 | Issued |
Array
(
[id] => 1503695
[patent_doc_number] => 06465355
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[patent_issue_date] => 2002-10-15
[patent_title] => 'Method of fabricating suspended microstructures'
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[patent_app_number] => 09/844356
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/844356 | Method of fabricating suspended microstructures | Apr 26, 2001 | Issued |
Array
(
[id] => 1196761
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[patent_title] => 'Method for forming contact window'
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Array
(
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Array
(
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Array
(
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Array
(
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Array
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Array
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Array
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