
Lan Vinh
Examiner (ID: 2362, Phone: (571)272-1471 , Office: P/1713 )
| Most Active Art Unit | 1713 |
| Art Unit(s) | 1765, 1792, 1713 |
| Total Applications | 1662 |
| Issued Applications | 1401 |
| Pending Applications | 46 |
| Abandoned Applications | 218 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1071896
[patent_doc_number] => 06841480
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-01-11
[patent_title] => 'Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate'
[patent_app_type] => utility
[patent_app_number] => 10/067587
[patent_app_country] => US
[patent_app_date] => 2002-02-04
[patent_effective_date] => 0000-00-00
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[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/841/06841480.pdf
[firstpage_image] =>[orig_patent_app_number] => 10067587
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/067587 | Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate | Feb 3, 2002 | Issued |
Array
(
[id] => 5859357
[patent_doc_number] => 20020123225
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-09-05
[patent_title] => 'Control of Vmin transient voltage drift by using a PECVD silicon oxynitride film at the protective overcoat level'
[patent_app_type] => new
[patent_app_number] => 10/061560
[patent_app_country] => US
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[pdf_file] => publications/A1/0123/20020123225.pdf
[firstpage_image] =>[orig_patent_app_number] => 10061560
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/061560 | Control of Vmin transient voltage drift by using a PECVD silicon oxynitride film at the protective overcoat level | Jan 31, 2002 | Abandoned |
Array
(
[id] => 6792182
[patent_doc_number] => 20030087526
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[patent_kind] => A1
[patent_issue_date] => 2003-05-08
[patent_title] => 'Method of etching a mask layer and a protecting layer for metal contact windows'
[patent_app_type] => new
[patent_app_number] => 10/053160
[patent_app_country] => US
[patent_app_date] => 2002-01-15
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/053160 | Method of etching a mask layer and a protecting layer for metal contact windows | Jan 14, 2002 | Issued |
Array
(
[id] => 6412561
[patent_doc_number] => 20020125206
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-09-12
[patent_title] => 'Method for manufacturing a semiconductor device'
[patent_app_type] => new
[patent_app_number] => 10/043180
[patent_app_country] => US
[patent_app_date] => 2002-01-14
[patent_effective_date] => 0000-00-00
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Array
(
[id] => 6414587
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[patent_kind] => A1
[patent_issue_date] => 2002-09-12
[patent_title] => 'Ammonium oxalate-containing polishing system and method'
[patent_app_type] => new
[patent_app_number] => 10/043534
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[patent_app_date] => 2002-01-10
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Array
(
[id] => 6783156
[patent_doc_number] => 20030064603
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[patent_kind] => A1
[patent_issue_date] => 2003-04-03
[patent_title] => 'Manufacture method for semiconductor device having silicon-containing insulating film'
[patent_app_type] => new
[patent_app_number] => 10/040378
[patent_app_country] => US
[patent_app_date] => 2002-01-09
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[pdf_file] => publications/A1/0064/20030064603.pdf
[firstpage_image] =>[orig_patent_app_number] => 10040378
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/040378 | Manufacture method for semiconductor device having silicon-containing insulating film | Jan 8, 2002 | Issued |
Array
(
[id] => 1089206
[patent_doc_number] => 06828241
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[patent_issue_date] => 2004-12-07
[patent_title] => 'Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source'
[patent_app_type] => B2
[patent_app_number] => 10/041838
[patent_app_country] => US
[patent_app_date] => 2002-01-07
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/828/06828241.pdf
[firstpage_image] =>[orig_patent_app_number] => 10041838
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/041838 | Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source | Jan 6, 2002 | Issued |
Array
(
[id] => 1216550
[patent_doc_number] => 06706639
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2004-03-16
[patent_title] => 'Method for interconnecting magnetoresistive memory bits'
[patent_app_type] => B2
[patent_app_number] => 10/034483
[patent_app_country] => US
[patent_app_date] => 2001-12-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/06/706/06706639.pdf
[firstpage_image] =>[orig_patent_app_number] => 10034483
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/034483 | Method for interconnecting magnetoresistive memory bits | Dec 27, 2001 | Issued |
Array
(
[id] => 6081252
[patent_doc_number] => 20020081849
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-06-27
[patent_title] => 'Chemical mechanical polishing compositions for CMP removal of iridium thin films'
[patent_app_type] => new
[patent_app_number] => 10/034764
[patent_app_country] => US
[patent_app_date] => 2001-12-28
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[firstpage_image] =>[orig_patent_app_number] => 10034764
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/034764 | Chemical mechanical polishing compositions for CMP removal of iridium thin films | Dec 27, 2001 | Issued |
Array
(
[id] => 1138466
[patent_doc_number] => 06780776
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-08-24
[patent_title] => 'Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer'
[patent_app_type] => B1
[patent_app_number] => 10/023328
[patent_app_country] => US
[patent_app_date] => 2001-12-20
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/023328 | Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer | Dec 19, 2001 | Issued |
Array
(
[id] => 1303991
[patent_doc_number] => 06616854
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[patent_issue_date] => 2003-09-09
[patent_title] => 'Method of bonding and transferring a material to form a semiconductor device'
[patent_app_type] => B2
[patent_app_number] => 10/022711
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/022711 | Method of bonding and transferring a material to form a semiconductor device | Dec 16, 2001 | Issued |
Array
(
[id] => 1014628
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[patent_title] => 'Plasma processing method'
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Array
(
[id] => 6379252
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Array
(
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[patent_title] => 'Use of a U-groove as an alternative to using a V-groove for protecting silicon against dicing induced damage'
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Array
(
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Array
(
[id] => 6081270
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[patent_title] => 'Etching method for ZnSe polycrystalline substrate'
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Array
(
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Array
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Array
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Array
(
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