
Lan Vinh
Examiner (ID: 2362, Phone: (571)272-1471 , Office: P/1713 )
| Most Active Art Unit | 1713 |
| Art Unit(s) | 1765, 1792, 1713 |
| Total Applications | 1662 |
| Issued Applications | 1401 |
| Pending Applications | 46 |
| Abandoned Applications | 218 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1177598
[patent_doc_number] => 06743730
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-06-01
[patent_title] => 'Plasma processing method'
[patent_app_type] => B1
[patent_app_number] => 09/671201
[patent_app_country] => US
[patent_app_date] => 2000-09-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 10
[patent_no_of_words] => 4044
[patent_no_of_claims] => 25
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[patent_words_short_claim] => 41
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/743/06743730.pdf
[firstpage_image] =>[orig_patent_app_number] => 09671201
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/671201 | Plasma processing method | Sep 27, 2000 | Issued |
Array
(
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[patent_doc_number] => 06872668
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2005-03-29
[patent_title] => 'Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structure'
[patent_app_type] => utility
[patent_app_number] => 09/671667
[patent_app_country] => US
[patent_app_date] => 2000-09-26
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 09671667
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/671667 | Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structure | Sep 25, 2000 | Issued |
Array
(
[id] => 1500499
[patent_doc_number] => 06486070
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-11-26
[patent_title] => 'Ultra-high oxide to photoresist selective etch of high-aspect-ratio openings in a low-pressure, high-density plasma'
[patent_app_type] => B1
[patent_app_number] => 09/666762
[patent_app_country] => US
[patent_app_date] => 2000-09-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[pdf_file] => patents/06/486/06486070.pdf
[firstpage_image] =>[orig_patent_app_number] => 09666762
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/666762 | Ultra-high oxide to photoresist selective etch of high-aspect-ratio openings in a low-pressure, high-density plasma | Sep 20, 2000 | Issued |
Array
(
[id] => 1574827
[patent_doc_number] => 06468915
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-10-22
[patent_title] => 'Method of silicon oxynitride ARC removal after gate etching'
[patent_app_type] => B1
[patent_app_number] => 09/666317
[patent_app_country] => US
[patent_app_date] => 2000-09-21
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/468/06468915.pdf
[firstpage_image] =>[orig_patent_app_number] => 09666317
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/666317 | Method of silicon oxynitride ARC removal after gate etching | Sep 20, 2000 | Issued |
Array
(
[id] => 1235792
[patent_doc_number] => 06689697
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[patent_kind] => B1
[patent_issue_date] => 2004-02-10
[patent_title] => 'Method of forming uniformly planarized structure in a semiconductor wafer'
[patent_app_type] => B1
[patent_app_number] => 09/666340
[patent_app_country] => US
[patent_app_date] => 2000-09-21
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 09666340
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/666340 | Method of forming uniformly planarized structure in a semiconductor wafer | Sep 20, 2000 | Issued |
Array
(
[id] => 1550551
[patent_doc_number] => 06399509
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[patent_kind] => B1
[patent_issue_date] => 2002-06-04
[patent_title] => 'Defects reduction for a metal etcher'
[patent_app_type] => B1
[patent_app_number] => 09/664426
[patent_app_country] => US
[patent_app_date] => 2000-09-18
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[firstpage_image] =>[orig_patent_app_number] => 09664426
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/664426 | Defects reduction for a metal etcher | Sep 17, 2000 | Issued |
Array
(
[id] => 1126749
[patent_doc_number] => 06790785
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-09-14
[patent_title] => 'Metal-assisted chemical etch porous silicon formation method'
[patent_app_type] => B1
[patent_app_number] => 09/662682
[patent_app_country] => US
[patent_app_date] => 2000-09-15
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/790/06790785.pdf
[firstpage_image] =>[orig_patent_app_number] => 09662682
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/662682 | Metal-assisted chemical etch porous silicon formation method | Sep 14, 2000 | Issued |
Array
(
[id] => 1534656
[patent_doc_number] => 06489242
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-12-03
[patent_title] => 'Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures'
[patent_app_type] => B1
[patent_app_number] => 09/661465
[patent_app_country] => US
[patent_app_date] => 2000-09-13
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/489/06489242.pdf
[firstpage_image] =>[orig_patent_app_number] => 09661465
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/661465 | Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures | Sep 12, 2000 | Issued |
Array
(
[id] => 1202742
[patent_doc_number] => 06720270
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-04-13
[patent_title] => 'Method for reducing size of semiconductor unit in packaging process'
[patent_app_type] => B1
[patent_app_number] => 09/660753
[patent_app_country] => US
[patent_app_date] => 2000-09-13
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[firstpage_image] =>[orig_patent_app_number] => 09660753
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/660753 | Method for reducing size of semiconductor unit in packaging process | Sep 12, 2000 | Issued |
Array
(
[id] => 1336610
[patent_doc_number] => 06593244
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-07-15
[patent_title] => 'Process for etching conductors at high etch rates'
[patent_app_type] => B1
[patent_app_number] => 09/659072
[patent_app_country] => US
[patent_app_date] => 2000-09-11
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 09659072
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/659072 | Process for etching conductors at high etch rates | Sep 10, 2000 | Issued |
Array
(
[id] => 1134529
[patent_doc_number] => 06784108
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-08-31
[patent_title] => 'Gas pulsing for etch profile control'
[patent_app_type] => B1
[patent_app_number] => 09/651871
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/651871 | Gas pulsing for etch profile control | Aug 30, 2000 | Issued |
Array
(
[id] => 1362193
[patent_doc_number] => 06569774
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[patent_issue_date] => 2003-05-27
[patent_title] => 'Method to eliminate striations and surface roughness caused by dry etch'
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Array
(
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[patent_title] => 'Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates'
[patent_app_type] => utility
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Array
(
[id] => 1132323
[patent_doc_number] => 06783695
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[patent_issue_date] => 2004-08-31
[patent_title] => 'Acid blend for removing etch residue'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/643946 | Acid blend for removing etch residue | Aug 22, 2000 | Issued |
Array
(
[id] => 1390845
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[patent_title] => 'Methods for use of pulsed voltage in a plasma reactor'
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Array
(
[id] => 1414843
[patent_doc_number] => 06521534
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[patent_issue_date] => 2003-02-18
[patent_title] => 'Treatment of exposed silicon and silicon dioxide surfaces'
[patent_app_type] => B1
[patent_app_number] => 09/639369
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/639369 | Treatment of exposed silicon and silicon dioxide surfaces | Aug 14, 2000 | Issued |
Array
(
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[patent_title] => 'Method and apparatus for selective removal of material from wafer alignment marks'
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Array
(
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[patent_title] => 'Two phase chemical/mechanical polishing process for tungsten layers'
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Array
(
[id] => 1336600
[patent_doc_number] => 06593243
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[patent_issue_date] => 2003-07-15
[patent_title] => 'Method of manufacturing semiconductor device'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/632163 | Method of manufacturing semiconductor device | Aug 2, 2000 | Issued |
| 09/625970 | Etiching apparatus having confinment and guide object for gas flow of plasma and method for using same | Jul 25, 2000 | Abandoned |