
Lisa A. Kilday
Examiner (ID: 8394)
| Most Active Art Unit | 2829 |
| Art Unit(s) | 2813, 2829 |
| Total Applications | 329 |
| Issued Applications | 312 |
| Pending Applications | 7 |
| Abandoned Applications | 10 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4214815
[patent_doc_number] => 06087191
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-07-11
[patent_title] => 'Method for repairing surface defects'
[patent_app_type] => 1
[patent_app_number] => 9/012142
[patent_app_country] => US
[patent_app_date] => 1998-01-22
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[pdf_file] => patents/06/087/06087191.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/012142 | Method for repairing surface defects | Jan 21, 1998 | Issued |
Array
(
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[patent_doc_number] => 20020142621
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[patent_kind] => A1
[patent_issue_date] => 2002-10-03
[patent_title] => 'VAPOR PHASE DEPOSITION OF UNIFORM AND ULTRATHIN SILANCES'
[patent_app_type] => new
[patent_app_number] => 09/007989
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/007989 | VAPOR PHASE DEPOSITION OF UNIFORM AND ULTRATHIN SILANCES | Jan 15, 1998 | Abandoned |
Array
(
[id] => 4181799
[patent_doc_number] => 06020273
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[patent_kind] => NA
[patent_issue_date] => 2000-02-01
[patent_title] => 'Method of stabilizing low dielectric constant films'
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[patent_app_number] => 9/005569
[patent_app_country] => US
[patent_app_date] => 1998-01-12
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/005569 | Method of stabilizing low dielectric constant films | Jan 11, 1998 | Issued |
Array
(
[id] => 4064271
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[patent_kind] => NA
[patent_issue_date] => 1999-12-28
[patent_title] => 'Selective etching for improved dielectric interlayer planarization'
[patent_app_type] => 1
[patent_app_number] => 8/993120
[patent_app_country] => US
[patent_app_date] => 1997-12-18
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/993120 | Selective etching for improved dielectric interlayer planarization | Dec 17, 1997 | Issued |
Array
(
[id] => 4156354
[patent_doc_number] => 06156651
[patent_country] => US
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[patent_issue_date] => 2000-12-05
[patent_title] => 'Metallization method for porous dielectrics'
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[patent_app_number] => 8/988175
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/988175 | Metallization method for porous dielectrics | Dec 9, 1997 | Issued |
Array
(
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[patent_doc_number] => 06410454
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[patent_issue_date] => 2002-06-25
[patent_title] => 'Method and apparatus for removing contaminants from the surface of a semiconductor wafer'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/982586 | Method and apparatus for removing contaminants from the surface of a semiconductor wafer | Dec 1, 1997 | Issued |
Array
(
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[patent_issue_date] => 2000-02-01
[patent_title] => 'Method for unlanded via etching using etch stop'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/982266 | Method for unlanded via etching using etch stop | Nov 30, 1997 | Issued |
Array
(
[id] => 4100516
[patent_doc_number] => 06066578
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[patent_kind] => NA
[patent_issue_date] => 2000-05-23
[patent_title] => 'Method and system for providing inorganic vapor surface treatment for photoresist adhesion promotion'
[patent_app_type] => 1
[patent_app_number] => 8/980888
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[pdf_file] => patents/06/066/06066578.pdf
[firstpage_image] =>[orig_patent_app_number] => 980888
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/980888 | Method and system for providing inorganic vapor surface treatment for photoresist adhesion promotion | Nov 30, 1997 | Issued |
Array
(
[id] => 4358395
[patent_doc_number] => 06168967
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-01-02
[patent_title] => 'Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms'
[patent_app_type] => 1
[patent_app_number] => 8/977860
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/977860 | Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms | Nov 25, 1997 | Issued |
Array
(
[id] => 4303065
[patent_doc_number] => 06187671
[patent_country] => US
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[patent_issue_date] => 2001-02-13
[patent_title] => 'Method of forming semiconductor device having minute contact hole'
[patent_app_type] => 1
[patent_app_number] => 8/969918
[patent_app_country] => US
[patent_app_date] => 1997-11-13
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[pdf_file] => patents/06/187/06187671.pdf
[firstpage_image] =>[orig_patent_app_number] => 969918
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/969918 | Method of forming semiconductor device having minute contact hole | Nov 12, 1997 | Issued |
Array
(
[id] => 4236169
[patent_doc_number] => 06165913
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[patent_issue_date] => 2000-12-26
[patent_title] => 'Manufacturing method for spacer'
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[patent_app_number] => 8/957922
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/957922 | Manufacturing method for spacer | Oct 26, 1997 | Issued |
Array
(
[id] => 4250955
[patent_doc_number] => 06207587
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Array
(
[id] => 4170022
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[patent_title] => 'Method for forming oxide film of semiconductor device, and oxide film forming apparatus capable of shortening pre-processing time for concentration measurement'
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Array
(
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Array
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Array
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Array
(
[id] => 1401394
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Array
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Array
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