
Mary Ann Calabrese
Examiner (ID: 18530, Phone: (571)272-8704 , Office: P/2913 )
| Most Active Art Unit | 2913 |
| Art Unit(s) | 2931, 2913 |
| Total Applications | 4141 |
| Issued Applications | 3855 |
| Pending Applications | 21 |
| Abandoned Applications | 276 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 7086600
[patent_doc_number] => 20050006712
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2005-01-13
[patent_title] => 'PECVD silicon-rich oxide layer for reduced UV charging'
[patent_app_type] => utility
[patent_app_number] => 10/617451
[patent_app_country] => US
[patent_app_date] => 2003-07-11
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 2
[patent_no_of_words] => 1815
[patent_no_of_claims] => 19
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[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] => publications/A1/0006/20050006712.pdf
[firstpage_image] =>[orig_patent_app_number] => 10617451
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/617451 | PECVD silicon-rich oxide layer for reduced UV charging | Jul 10, 2003 | Issued |
Array
(
[id] => 1104922
[patent_doc_number] => 06812119
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-11-02
[patent_title] => 'Narrow fins by oxidation in double-gate finfet'
[patent_app_type] => B1
[patent_app_number] => 10/614052
[patent_app_country] => US
[patent_app_date] => 2003-07-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[patent_no_of_words] => 2145
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[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/812/06812119.pdf
[firstpage_image] =>[orig_patent_app_number] => 10614052
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/614052 | Narrow fins by oxidation in double-gate finfet | Jul 7, 2003 | Issued |
Array
(
[id] => 7183275
[patent_doc_number] => 20050161754
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2005-07-28
[patent_title] => 'Photoelectric conversion apparatus and manufacturing method of same'
[patent_app_type] => utility
[patent_app_number] => 10/516091
[patent_app_country] => US
[patent_app_date] => 2003-07-07
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 14
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[pdf_file] => publications/A1/0161/20050161754.pdf
[firstpage_image] =>[orig_patent_app_number] => 10516091
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/516091 | Photoelectric conversion apparatus and manufacturing method of same | Jul 6, 2003 | Issued |
Array
(
[id] => 7222144
[patent_doc_number] => 20040072446
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-04-15
[patent_title] => 'Method for fabricating an ultra shallow junction of a field effect transistor'
[patent_app_type] => new
[patent_app_number] => 10/612642
[patent_app_country] => US
[patent_app_date] => 2003-07-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
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[patent_no_of_words] => 6132
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[patent_current_assignee] =>[type] => publication
[pdf_file] => publications/A1/0072/20040072446.pdf
[firstpage_image] =>[orig_patent_app_number] => 10612642
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/612642 | Method for fabricating an ultra shallow junction of a field effect transistor | Jun 30, 2003 | Abandoned |
Array
(
[id] => 7433510
[patent_doc_number] => 20040002196
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-01-01
[patent_title] => 'EDMOS device having a lattice type drift region and method of manufacturing the same'
[patent_app_type] => new
[patent_app_number] => 10/611502
[patent_app_country] => US
[patent_app_date] => 2003-06-30
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[pdf_file] => publications/A1/0002/20040002196.pdf
[firstpage_image] =>[orig_patent_app_number] => 10611502
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/611502 | EDMOS device having a lattice type drift region and method of manufacturing the same | Jun 29, 2003 | Issued |
Array
(
[id] => 899902
[patent_doc_number] => 07338869
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2008-03-04
[patent_title] => 'Semiconductor device and its manufacturing method'
[patent_app_type] => utility
[patent_app_number] => 10/517772
[patent_app_country] => US
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[pdf_file] => patents/07/338/07338869.pdf
[firstpage_image] =>[orig_patent_app_number] => 10517772
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/517772 | Semiconductor device and its manufacturing method | Jun 25, 2003 | Issued |
Array
(
[id] => 7383395
[patent_doc_number] => 20040082155
[patent_country] => US
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[patent_issue_date] => 2004-04-29
[patent_title] => 'Method for forming word line of semiconductor device'
[patent_app_type] => new
[patent_app_number] => 10/603611
[patent_app_country] => US
[patent_app_date] => 2003-06-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
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[pdf_file] => publications/A1/0082/20040082155.pdf
[firstpage_image] =>[orig_patent_app_number] => 10603611
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/603611 | Method for forming word line of semiconductor device | Jun 25, 2003 | Issued |
Array
(
[id] => 1123211
[patent_doc_number] => 06794198
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-09-21
[patent_title] => 'MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides'
[patent_app_type] => B1
[patent_app_number] => 10/606057
[patent_app_country] => US
[patent_app_date] => 2003-06-25
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/794/06794198.pdf
[firstpage_image] =>[orig_patent_app_number] => 10606057
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/606057 | MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides | Jun 24, 2003 | Issued |
Array
(
[id] => 7629838
[patent_doc_number] => 06818518
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-11-16
[patent_title] => 'Method for producing low/high voltage threshold transistors in semiconductor processing'
[patent_app_type] => B1
[patent_app_number] => 10/602994
[patent_app_country] => US
[patent_app_date] => 2003-06-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[pdf_file] => patents/06/818/06818518.pdf
[firstpage_image] =>[orig_patent_app_number] => 10602994
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/602994 | Method for producing low/high voltage threshold transistors in semiconductor processing | Jun 23, 2003 | Issued |
Array
(
[id] => 7429599
[patent_doc_number] => 20040266122
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-12-30
[patent_title] => 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING AN IMPROVED DISPOSABLE SPACER'
[patent_app_type] => new
[patent_app_number] => 10/602241
[patent_app_country] => US
[patent_app_date] => 2003-06-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[pdf_file] => publications/A1/0266/20040266122.pdf
[firstpage_image] =>[orig_patent_app_number] => 10602241
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/602241 | Method for manufacturing a semiconductor device having an improved disposable spacer | Jun 23, 2003 | Issued |
Array
(
[id] => 1065555
[patent_doc_number] => 06846708
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-01-25
[patent_title] => 'Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device'
[patent_app_type] => utility
[patent_app_number] => 10/601717
[patent_app_country] => US
[patent_app_date] => 2003-06-23
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/846/06846708.pdf
[firstpage_image] =>[orig_patent_app_number] => 10601717
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/601717 | Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device | Jun 22, 2003 | Issued |
Array
(
[id] => 1065577
[patent_doc_number] => 06846720
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-01-25
[patent_title] => 'Method to reduce junction leakage current in strained silicon on silicon-germanium devices'
[patent_app_type] => utility
[patent_app_number] => 10/464282
[patent_app_country] => US
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[firstpage_image] =>[orig_patent_app_number] => 10464282
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/464282 | Method to reduce junction leakage current in strained silicon on silicon-germanium devices | Jun 17, 2003 | Issued |
Array
(
[id] => 1062800
[patent_doc_number] => 06849544
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-02-01
[patent_title] => 'Forming a conductive structure in a semiconductor device'
[patent_app_type] => utility
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[patent_app_country] => US
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[firstpage_image] =>[orig_patent_app_number] => 10454218
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/454218 | Forming a conductive structure in a semiconductor device | Jun 3, 2003 | Issued |
Array
(
[id] => 7343226
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[patent_issue_date] => 2004-03-11
[patent_title] => 'Process for fabricating a MOS transistor of short gate length and integrated circuit comprising such a transistor'
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[patent_app_number] => 10/454361
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/454361 | Process for fabricating a MOS transistor of short gate length and integrated circuit comprising such a transistor | Jun 3, 2003 | Issued |
Array
(
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[patent_title] => 'Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/446384 | Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same | May 26, 2003 | Issued |
Array
(
[id] => 1101715
[patent_doc_number] => 06815320
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[patent_issue_date] => 2004-11-09
[patent_title] => 'Method for fabricating semiconductor device including gate spacer'
[patent_app_type] => B2
[patent_app_number] => 10/444221
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/444221 | Method for fabricating semiconductor device including gate spacer | May 22, 2003 | Issued |
Array
(
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[patent_issue_date] => 2004-10-14
[patent_title] => 'Ultrasonic-wave washing unit, ultrasonic-wave washing apparatus, ultrasonic-wave washing method, method of manufacturing a semiconductor device, and method of manufacturing a liquid crystal display'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/443012 | Ultrasonic-wave washing unit, ultrasonic-wave washing apparatus, ultrasonic-wave washing method, method of manufacturing a semiconductor device, and method of manufacturing a liquid crystal display | May 21, 2003 | Issued |
Array
(
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[patent_title] => 'Semiconductor device having an insulated gate and a fabrication process thereof'
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Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/437881 | Method of fabricating MOS transistors | May 12, 2003 | Issued |
Array
(
[id] => 1050026
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[patent_title] => 'JFET structure for integrated circuit and fabrication method'
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[firstpage_image] =>[orig_patent_app_number] => 10434642
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/434642 | JFET structure for integrated circuit and fabrication method | May 8, 2003 | Issued |