
Mary Ann Calabrese
Examiner (ID: 18530, Phone: (571)272-8704 , Office: P/2913 )
| Most Active Art Unit | 2913 |
| Art Unit(s) | 2931, 2913 |
| Total Applications | 4141 |
| Issued Applications | 3855 |
| Pending Applications | 21 |
| Abandoned Applications | 276 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1435913
[patent_doc_number] => 06355556
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-03-12
[patent_title] => 'Method for fabricating transistor'
[patent_app_type] => B1
[patent_app_number] => 09/675972
[patent_app_country] => US
[patent_app_date] => 2000-09-29
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[pdf_file] => patents/06/355/06355556.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/675972 | Method for fabricating transistor | Sep 28, 2000 | Issued |
Array
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[patent_doc_number] => 06342423
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[patent_issue_date] => 2002-01-29
[patent_title] => 'MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch'
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[patent_app_number] => 09/667781
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Array
(
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[patent_issue_date] => 2002-04-23
[patent_title] => 'Method of making gate wiring layer over semiconductor substrate'
[patent_app_type] => B1
[patent_app_number] => 09/665962
[patent_app_country] => US
[patent_app_date] => 2000-09-21
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/665962 | Method of making gate wiring layer over semiconductor substrate | Sep 20, 2000 | Issued |
Array
(
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[patent_kind] => B1
[patent_issue_date] => 2002-07-16
[patent_title] => 'Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices'
[patent_app_type] => B1
[patent_app_number] => 09/641053
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[patent_app_date] => 2000-08-17
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/641053 | Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices | Aug 16, 2000 | Issued |
Array
(
[id] => 1542579
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[patent_issue_date] => 2002-04-16
[patent_title] => 'Method for making raised source/drain regions using laser'
[patent_app_type] => B1
[patent_app_number] => 09/628382
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[patent_app_date] => 2000-08-01
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[firstpage_image] =>[orig_patent_app_number] => 09628382
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/628382 | Method for making raised source/drain regions using laser | Jul 31, 2000 | Issued |
Array
(
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[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-05-21
[patent_title] => 'Method for forming vertical profile of polysilicon gate electrodes'
[patent_app_type] => B1
[patent_app_number] => 09/626668
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/626668 | Method for forming vertical profile of polysilicon gate electrodes | Jul 26, 2000 | Issued |
Array
(
[id] => 1332299
[patent_doc_number] => 06596595
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[patent_issue_date] => 2003-07-22
[patent_title] => 'Forming a conductive structure in a semiconductor device'
[patent_app_type] => B1
[patent_app_number] => 09/620442
[patent_app_country] => US
[patent_app_date] => 2000-07-20
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[pdf_file] => patents/06/596/06596595.pdf
[firstpage_image] =>[orig_patent_app_number] => 09620442
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/620442 | Forming a conductive structure in a semiconductor device | Jul 19, 2000 | Issued |
| 09/529611 | METHOD OF FORMING AN ELECTRONIC DEVICE | Jul 18, 2000 | Abandoned |
Array
(
[id] => 1485236
[patent_doc_number] => 06365468
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-04-02
[patent_title] => 'Method for forming doped p-type gate with anti-reflection layer'
[patent_app_type] => B1
[patent_app_number] => 09/598192
[patent_app_country] => US
[patent_app_date] => 2000-06-21
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[firstpage_image] =>[orig_patent_app_number] => 09598192
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/598192 | Method for forming doped p-type gate with anti-reflection layer | Jun 20, 2000 | Issued |
Array
(
[id] => 4326463
[patent_doc_number] => 06319762
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-11-20
[patent_title] => 'Method for fabricating poly-spacers'
[patent_app_type] => 1
[patent_app_number] => 9/597832
[patent_app_country] => US
[patent_app_date] => 2000-06-19
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/597832 | Method for fabricating poly-spacers | Jun 18, 2000 | Issued |
Array
(
[id] => 4381632
[patent_doc_number] => 06277735
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-21
[patent_title] => 'Method for forming a refractory metal silicide layer'
[patent_app_type] => 1
[patent_app_number] => 9/593384
[patent_app_country] => US
[patent_app_date] => 2000-06-14
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[firstpage_image] =>[orig_patent_app_number] => 593384
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/593384 | Method for forming a refractory metal silicide layer | Jun 13, 2000 | Issued |
Array
(
[id] => 4395215
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[patent_issue_date] => 2001-10-02
[patent_title] => 'Method for forming gate electrode in semiconductor device capable of preventing distortion of oxidation profile thereof'
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Array
(
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Array
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[patent_title] => 'Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same'
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Array
(
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[patent_title] => 'Selective removal of a metal oxide dielectric'
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Array
(
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[patent_title] => 'Freestanding multiplayer IC wiring structure'
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Array
(
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[patent_kind] => NA
[patent_issue_date] => 2001-07-03
[patent_title] => 'Semiconductor device with outwardly tapered sidewall spacers and method for forming same'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/565292 | Semiconductor device with outwardly tapered sidewall spacers and method for forming same | Apr 30, 2000 | Issued |
Array
(
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Array
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Array
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/548791 | MOCVD-grown emode HIGFET buffer | Apr 12, 2000 | Issued |