
Matthew A. Anderson
Examiner (ID: 2678)
| Most Active Art Unit | 1765 |
| Art Unit(s) | 1722, 1765 |
| Total Applications | 287 |
| Issued Applications | 228 |
| Pending Applications | 14 |
| Abandoned Applications | 45 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
| 10/009530 | Method of fabricating a semiconductor device | Jan 21, 2002 | Abandoned |
Array
(
[id] => 6074541
[patent_doc_number] => 20020078882
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[patent_kind] => A1
[patent_issue_date] => 2002-06-27
[patent_title] => 'Apparatus for forming an epitaxial silicon wafer with a denuded zone'
[patent_app_type] => new
[patent_app_number] => 10/050026
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/050026 | Apparatus for forming an epitaxial silicon wafer with a denuded zone | Jan 14, 2002 | Abandoned |
Array
(
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[patent_doc_number] => 06776842
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[patent_kind] => B2
[patent_issue_date] => 2004-08-17
[patent_title] => 'Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic'
[patent_app_type] => B2
[patent_app_number] => 09/902497
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/902497 | Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic | Jan 14, 2002 | Issued |
Array
(
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[patent_title] => 'Pattern for monitoring epitaxial layer washout'
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[firstpage_image] =>[orig_patent_app_number] => 10047379
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/047379 | Pattern for monitoring epitaxial layer washout | Jan 13, 2002 | Issued |
Array
(
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[patent_doc_number] => 20020083885
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[patent_kind] => A1
[patent_issue_date] => 2002-07-04
[patent_title] => 'Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure'
[patent_app_type] => new
[patent_app_number] => 10/042060
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/042060 | Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure | Jan 6, 2002 | Issued |
Array
(
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[patent_doc_number] => 20020096108
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[patent_issue_date] => 2002-07-25
[patent_title] => 'Device having a foil-lined crucible for the sublimation growth of an SiC single crystal'
[patent_app_type] => new
[patent_app_number] => 10/042058
[patent_app_country] => US
[patent_app_date] => 2002-01-07
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Array
(
[id] => 5963324
[patent_doc_number] => 20020088391
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[patent_issue_date] => 2002-07-11
[patent_title] => 'Seed crystal holder with lateral mount for an SiC seed crystal'
[patent_app_type] => new
[patent_app_number] => 10/042099
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[firstpage_image] =>[orig_patent_app_number] => 10042099
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/042099 | Seed crystal holder with lateral mount for an SiC seed crystal | Jan 6, 2002 | Issued |
Array
(
[id] => 1138697
[patent_doc_number] => 06776841
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2004-08-17
[patent_title] => 'Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer'
[patent_app_type] => B2
[patent_app_number] => 10/034221
[patent_app_country] => US
[patent_app_date] => 2001-12-28
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[pdf_file] => patents/06/776/06776841.pdf
[firstpage_image] =>[orig_patent_app_number] => 10034221
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/034221 | Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer | Dec 27, 2001 | Issued |
Array
(
[id] => 6434311
[patent_doc_number] => 20020127766
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-09-12
[patent_title] => 'Semiconductor wafer manufacturing process'
[patent_app_type] => new
[patent_app_number] => 10/036917
[patent_app_country] => US
[patent_app_date] => 2001-12-21
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0127/20020127766.pdf
[firstpage_image] =>[orig_patent_app_number] => 10036917
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/036917 | Semiconductor wafer manufacturing process | Dec 20, 2001 | Abandoned |
Array
(
[id] => 6550743
[patent_doc_number] => 20020083892
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-07-04
[patent_title] => 'Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal'
[patent_app_type] => new
[patent_app_number] => 10/024471
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[pdf_file] => publications/A1/0083/20020083892.pdf
[firstpage_image] =>[orig_patent_app_number] => 10024471
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/024471 | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal | Dec 20, 2001 | Issued |
Array
(
[id] => 1112318
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[patent_issue_date] => 2004-10-12
[patent_title] => 'Liquid phase growth methods and liquid phase growth apparatus'
[patent_app_type] => B2
[patent_app_number] => 10/022545
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[firstpage_image] =>[orig_patent_app_number] => 10022545
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/022545 | Liquid phase growth methods and liquid phase growth apparatus | Dec 19, 2001 | Issued |
Array
(
[id] => 5839245
[patent_doc_number] => 20020129759
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[patent_title] => 'Method for producing silicon single crystal'
[patent_app_type] => new
[patent_app_number] => 10/020574
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[firstpage_image] =>[orig_patent_app_number] => 10020574
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/020574 | Method for producing silicon single crystal | Dec 17, 2001 | Issued |
Array
(
[id] => 1131910
[patent_doc_number] => 06783588
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[patent_kind] => B2
[patent_issue_date] => 2004-08-31
[patent_title] => 'BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator'
[patent_app_type] => B2
[patent_app_number] => 10/014355
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/014355 | BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator | Dec 13, 2001 | Issued |
Array
(
[id] => 1002058
[patent_doc_number] => 06908510
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[patent_issue_date] => 2005-06-21
[patent_title] => 'Material purification'
[patent_app_type] => utility
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/011718 | Material purification | Dec 10, 2001 | Issued |
Array
(
[id] => 6585770
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[patent_title] => 'Material purification'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/011717 | Material purification | Dec 10, 2001 | Abandoned |
Array
(
[id] => 6694294
[patent_doc_number] => 20030106488
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[patent_kind] => A1
[patent_issue_date] => 2003-06-12
[patent_title] => 'Manufacturing method for semiconductor quantum particles'
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[firstpage_image] =>[orig_patent_app_number] => 10007563
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/007563 | Manufacturing method for semiconductor quantum particles | Dec 9, 2001 | Abandoned |
Array
(
[id] => 5916379
[patent_doc_number] => 20020112658
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-08-22
[patent_title] => 'Process for monitoring the gaseous environment of a crystal puller for semiconductor growth'
[patent_app_type] => new
[patent_app_number] => 10/004961
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[patent_app_date] => 2001-12-03
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[pdf_file] => publications/A1/0112/20020112658.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/004961 | Process for monitoring the gaseous environment of a crystal puller for semiconductor growth | Dec 2, 2001 | Abandoned |
| 09/889597 | Method for producing a thin film | Nov 26, 2001 | Abandoned |
Array
(
[id] => 1146111
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[patent_title] => 'III-V compound films using chemical deposition'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/989969 | III-V compound films using chemical deposition | Nov 19, 2001 | Issued |
Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/999112 | Process for etching thin-film layers of a workpiece used to form microelectronic circuits or components | Oct 31, 2001 | Issued |