
Michael Aaron Pratt
Examiner (ID: 7866, Phone: (571)272-2145 , Office: P/2914 )
| Most Active Art Unit | |
| Art Unit(s) | |
| Total Applications | |
| Issued Applications | |
| Pending Applications | |
| Abandoned Applications |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
| 06/829038 | Field effect transistor | Feb 12, 1986 | Issued |
| 06/828575 | Semiconductor component with planar structure | Feb 9, 1986 | Issued |
| 06/827102 | SEMICONDUCTOR MEMORY DEVICE HAVING STACKED-CAPACITOR TYPE MEMORY CELLS AND MANUFACTURING METHOD FOR THE SAME | Feb 6, 1986 | Abandoned |
| 06/826772 | Vertical type MOS transistor and its chip | Feb 5, 1986 | Issued |
| 06/825720 | THREE TERMINAL TUNNELING DEVICE AND METHOD | Jan 30, 1986 | Abandoned |
| 06/819089 | Semiconductor device and arrangement | Jan 1, 1986 | Issued |
| 06/812576 | SLS COMPLEMENTARY LOGIC DEVICES WITH INCREASED CARRIER MOBILITIES | Dec 22, 1985 | Abandoned |
| 06/810929 | Buried Hall element | Dec 17, 1985 | Issued |
| 06/810442 | INTEGRATED CIRCUIT COMPRISING CAPACITANCES OF DIFFERENT CAPACITANCE VALUES | Dec 16, 1985 | Abandoned |
| 06/802342 | MONOLITHIC LIGHT EMITTING DIODE ARRAY | Nov 24, 1985 | Abandoned |
| 06/801037 | Structure for contacting devices in three dimensional circuitry | Nov 21, 1985 | Issued |
| 06/799556 | C MOS IC and method of making the same | Nov 18, 1985 | Issued |
| 06/799111 | HETEROJUNCTION BIPOLAR TRANSISTOR HAVING AN EMITTER REGION WITH A BAND GAP GREATER THAN THAT OF A BASE REGION | Nov 17, 1985 | Abandoned |
| 06/799093 | Integrated semiconductor circuit device | Nov 17, 1985 | Issued |
| 06/798282 | SEMICONDUCTOR MEMORY DEVICE | Nov 14, 1985 | Abandoned |
| 06/798422 | Contact vias in semiconductor devices | Nov 14, 1985 | Issued |
| 06/796406 | IMPROVED PERMEABLE BASE TRANSISTOR | Nov 7, 1985 | Abandoned |
| 06/795161 | Light emitting element | Nov 4, 1985 | Issued |
| 06/788594 | DOUBLE INJECTION FIELD EFFECT TRANSISTORS | Oct 16, 1985 | Abandoned |
| 06/783365 | GAAS SINGLE CRYSTAL AS WELL AS METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE UTILIZING THE GAAS SINGLE CRYSTAL | Oct 2, 1985 | Abandoned |