
Nanda Bondade
Examiner (ID: 16161)
| Most Active Art Unit | 2912 |
| Art Unit(s) | 2912, 2900, 2902 |
| Total Applications | 5029 |
| Issued Applications | 4983 |
| Pending Applications | 0 |
| Abandoned Applications | 46 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1060090
[patent_doc_number] => 06853034
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-02-08
[patent_title] => 'Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same'
[patent_app_type] => utility
[patent_app_number] => 09/756686
[patent_app_country] => US
[patent_app_date] => 2001-01-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
[patent_figures_cnt] => 36
[patent_no_of_words] => 10799
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[patent_words_short_claim] => 241
[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/853/06853034.pdf
[firstpage_image] =>[orig_patent_app_number] => 09756686
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/756686 | Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same | Jan 8, 2001 | Issued |
Array
(
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[patent_doc_number] => 06548851
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2003-04-15
[patent_title] => 'Semiconductor memory device with increased level of integration'
[patent_app_type] => B2
[patent_app_number] => 09/755086
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[patent_app_date] => 2001-01-08
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/755086 | Semiconductor memory device with increased level of integration | Jan 7, 2001 | Issued |
Array
(
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[patent_kind] => B2
[patent_issue_date] => 2002-07-02
[patent_title] => 'Buried shallow trench isolation and method for forming the same'
[patent_app_type] => B2
[patent_app_number] => 09/754145
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[patent_app_date] => 2001-01-05
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Array
(
[id] => 6571568
[patent_doc_number] => 20020084497
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[patent_kind] => A1
[patent_issue_date] => 2002-07-04
[patent_title] => 'Composite transistor having a slew-rate control'
[patent_app_type] => new
[patent_app_number] => 09/754156
[patent_app_country] => US
[patent_app_date] => 2001-01-04
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0084/20020084497.pdf
[firstpage_image] =>[orig_patent_app_number] => 09754156
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/754156 | Composite transistor having a slew-rate control | Jan 3, 2001 | Issued |
Array
(
[id] => 677114
[patent_doc_number] => 07087975
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[patent_kind] => B2
[patent_issue_date] => 2006-08-08
[patent_title] => 'Area efficient stacking of antifuses in semiconductor device'
[patent_app_type] => utility
[patent_app_number] => 09/751474
[patent_app_country] => US
[patent_app_date] => 2000-12-28
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[firstpage_image] =>[orig_patent_app_number] => 09751474
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/751474 | Area efficient stacking of antifuses in semiconductor device | Dec 27, 2000 | Issued |
Array
(
[id] => 1459816
[patent_doc_number] => 06426517
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[patent_kind] => B2
[patent_issue_date] => 2002-07-30
[patent_title] => 'Active matrix display device having multiple gate electrode portions'
[patent_app_type] => B2
[patent_app_number] => 09/736139
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/736139 | Active matrix display device having multiple gate electrode portions | Dec 12, 2000 | Issued |
Array
(
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[patent_doc_number] => 06960800
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[patent_title] => 'Semiconductor device and method for fabricating the same'
[patent_app_type] => utility
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Array
(
[id] => 6875527
[patent_doc_number] => 20010000620
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-05-03
[patent_title] => 'Thin film transistor and method of fabricating the same'
[patent_app_type] => new-utility
[patent_app_number] => 09/730875
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/730875 | Thin film transistor and method of fabricating the same | Dec 4, 2000 | Abandoned |
Array
(
[id] => 1422288
[patent_doc_number] => 06518623
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-02-11
[patent_title] => 'Semiconductor device having a buried-channel MOS structure'
[patent_app_type] => B1
[patent_app_number] => 09/718486
[patent_app_country] => US
[patent_app_date] => 2000-11-24
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[pdf_file] => patents/06/518/06518623.pdf
[firstpage_image] =>[orig_patent_app_number] => 09718486
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/718486 | Semiconductor device having a buried-channel MOS structure | Nov 23, 2000 | Issued |
| 09/716306 | Self-align offset gate structure and method of manufacture | Nov 19, 2000 | Abandoned |
Array
(
[id] => 1302478
[patent_doc_number] => 06624493
[patent_country] => US
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[patent_issue_date] => 2003-09-23
[patent_title] => 'Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems'
[patent_app_type] => B1
[patent_app_number] => 09/716046
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Array
(
[id] => 7634340
[patent_doc_number] => 06657280
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[patent_kind] => B1
[patent_issue_date] => 2003-12-02
[patent_title] => 'Redundant interconnect high current bipolar device'
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[patent_app_number] => 09/711726
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Array
(
[id] => 1229935
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[patent_issue_date] => 2004-02-24
[patent_title] => 'Storage node of DRAM cell'
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Array
(
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[patent_issue_date] => 2003-05-06
[patent_title] => 'Test pattern for evaluating a process of silicide film formation'
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Array
(
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[patent_title] => 'Lateral high-voltage sidewall transistor'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/694435 | Lateral high-voltage sidewall transistor | Oct 22, 2000 | Issued |
Array
(
[id] => 1375483
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[patent_issue_date] => 2003-05-06
[patent_title] => 'Edge structure for relaxing electric field of semiconductor device having an embedded type diffusion structure'
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Array
(
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[patent_title] => 'Vertical MOS transistor having body region formed by inclined ion implantation'
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Array
(
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Array
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Array
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