
Nanda Bondade
Examiner (ID: 16161)
| Most Active Art Unit | 2912 |
| Art Unit(s) | 2912, 2900, 2902 |
| Total Applications | 5029 |
| Issued Applications | 4983 |
| Pending Applications | 0 |
| Abandoned Applications | 46 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4309997
[patent_doc_number] => 06326668
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-12-04
[patent_title] => 'Semiconductor structure including metal nitride and metal silicide'
[patent_app_type] => 1
[patent_app_number] => 9/285573
[patent_app_country] => US
[patent_app_date] => 1999-04-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 7
[patent_no_of_words] => 5914
[patent_no_of_claims] => 15
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[patent_words_short_claim] => 122
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/326/06326668.pdf
[firstpage_image] =>[orig_patent_app_number] => 285573
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/285573 | Semiconductor structure including metal nitride and metal silicide | Apr 1, 1999 | Issued |
Array
(
[id] => 7117932
[patent_doc_number] => 20010001494
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-05-24
[patent_title] => 'POWER TRENCH MOS-GATED DEVICE AND PROCESS FOR FORMING SAME'
[patent_app_type] => new-utility
[patent_app_number] => 09/283536
[patent_app_country] => US
[patent_app_date] => 1999-04-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 11
[patent_figures_cnt] => 11
[patent_no_of_words] => 2368
[patent_no_of_claims] => 29
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[patent_words_short_claim] => 129
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[pdf_file] => publications/A1/0001/20010001494.pdf
[firstpage_image] =>[orig_patent_app_number] => 09283536
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/283536 | POWER TRENCH MOS-GATED DEVICE AND PROCESS FOR FORMING SAME | Mar 31, 1999 | Abandoned |
Array
(
[id] => 1217972
[patent_doc_number] => 06707103
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[patent_kind] => B1
[patent_issue_date] => 2004-03-16
[patent_title] => 'Low voltage rad hard MOSFET'
[patent_app_type] => B1
[patent_app_number] => 09/263916
[patent_app_country] => US
[patent_app_date] => 1999-03-05
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
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[patent_no_of_words] => 1719
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[pdf_file] => patents/06/707/06707103.pdf
[firstpage_image] =>[orig_patent_app_number] => 09263916
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/263916 | Low voltage rad hard MOSFET | Mar 4, 1999 | Issued |
Array
(
[id] => 1587851
[patent_doc_number] => 06359318
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-03-19
[patent_title] => 'Semiconductor device with DMOS and bi-polar transistors'
[patent_app_type] => B1
[patent_app_number] => 09/258401
[patent_app_country] => US
[patent_app_date] => 1999-02-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 14
[patent_figures_cnt] => 22
[patent_no_of_words] => 6856
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[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/359/06359318.pdf
[firstpage_image] =>[orig_patent_app_number] => 09258401
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/258401 | Semiconductor device with DMOS and bi-polar transistors | Feb 25, 1999 | Issued |
Array
(
[id] => 4292505
[patent_doc_number] => 06268636
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-07-31
[patent_title] => 'Operation and biasing for single device equivalent to CMOS'
[patent_app_type] => 1
[patent_app_number] => 9/246871
[patent_app_country] => US
[patent_app_date] => 1999-02-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 30
[patent_no_of_words] => 17750
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/268/06268636.pdf
[firstpage_image] =>[orig_patent_app_number] => 246871
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/246871 | Operation and biasing for single device equivalent to CMOS | Feb 7, 1999 | Issued |
Array
(
[id] => 7026651
[patent_doc_number] => 20010013636
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-08-16
[patent_title] => 'A SELF-ALIGNED, SUB-MINIMUM ISOLATION RING'
[patent_app_type] => new
[patent_app_number] => 09/235776
[patent_app_country] => US
[patent_app_date] => 1999-01-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 2
[patent_no_of_words] => 2939
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[pdf_file] => publications/A1/0013/20010013636.pdf
[firstpage_image] =>[orig_patent_app_number] => 09235776
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/235776 | A SELF-ALIGNED, SUB-MINIMUM ISOLATION RING | Jan 21, 1999 | Abandoned |
Array
(
[id] => 1419124
[patent_doc_number] => 06525376
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-02-25
[patent_title] => 'High withstand voltage insulated gate N-channel field effect transistor'
[patent_app_type] => B1
[patent_app_number] => 09/235670
[patent_app_country] => US
[patent_app_date] => 1999-01-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
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[patent_no_of_words] => 6152
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/525/06525376.pdf
[firstpage_image] =>[orig_patent_app_number] => 09235670
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/235670 | High withstand voltage insulated gate N-channel field effect transistor | Jan 21, 1999 | Issued |
Array
(
[id] => 4310320
[patent_doc_number] => 06252288
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-06-26
[patent_title] => 'High power trench-based rectifier with improved reverse breakdown characteristic'
[patent_app_type] => 1
[patent_app_number] => 9/232787
[patent_app_country] => US
[patent_app_date] => 1999-01-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
[patent_figures_cnt] => 13
[patent_no_of_words] => 4456
[patent_no_of_claims] => 18
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/252/06252288.pdf
[firstpage_image] =>[orig_patent_app_number] => 232787
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/232787 | High power trench-based rectifier with improved reverse breakdown characteristic | Jan 18, 1999 | Issued |
Array
(
[id] => 7343294
[patent_doc_number] => 20040046215
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-03-11
[patent_title] => 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'
[patent_app_type] => new
[patent_app_number] => 09/227935
[patent_app_country] => US
[patent_app_date] => 1999-01-11
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 15
[patent_figures_cnt] => 15
[patent_no_of_words] => 4681
[patent_no_of_claims] => 7
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[pdf_file] => publications/A1/0046/20040046215.pdf
[firstpage_image] =>[orig_patent_app_number] => 09227935
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/227935 | Semiconductor device having interconnection structure | Jan 10, 1999 | Issued |
Array
(
[id] => 751872
[patent_doc_number] => 07023060
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2006-04-04
[patent_title] => 'Methods for programming read-only memory cells and associated memories'
[patent_app_type] => utility
[patent_app_number] => 09/224756
[patent_app_country] => US
[patent_app_date] => 1999-01-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 9
[patent_no_of_words] => 2468
[patent_no_of_claims] => 10
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/07/023/07023060.pdf
[firstpage_image] =>[orig_patent_app_number] => 09224756
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/224756 | Methods for programming read-only memory cells and associated memories | Jan 3, 1999 | Issued |
Array
(
[id] => 6137857
[patent_doc_number] => 20020000612
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-01-03
[patent_title] => 'POWER-MOS TRANSISTOR'
[patent_app_type] => new
[patent_app_number] => 09/212186
[patent_app_country] => US
[patent_app_date] => 1998-12-15
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 2
[patent_no_of_words] => 2877
[patent_no_of_claims] => 20
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[pdf_file] => publications/A1/0000/20020000612.pdf
[firstpage_image] =>[orig_patent_app_number] => 09212186
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/212186 | POWER-MOS TRANSISTOR | Dec 14, 1998 | Abandoned |
| 09/209654 | ISOLATION BY ACTIVE TRANSISTORS WITH GROUNDED GATES | Dec 9, 1998 | Abandoned |
Array
(
[id] => 4301024
[patent_doc_number] => 06184555
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-02-06
[patent_title] => 'Field effect-controlled semiconductor component'
[patent_app_type] => 1
[patent_app_number] => 9/117636
[patent_app_country] => US
[patent_app_date] => 1998-12-04
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/184/06184555.pdf
[firstpage_image] =>[orig_patent_app_number] => 117636
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/117636 | Field effect-controlled semiconductor component | Dec 3, 1998 | Issued |
Array
(
[id] => 1587820
[patent_doc_number] => 06359310
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-03-19
[patent_title] => 'Shallow doped junctions with a variable profile gradation of dopants'
[patent_app_type] => B1
[patent_app_number] => 09/196515
[patent_app_country] => US
[patent_app_date] => 1998-11-20
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[firstpage_image] =>[orig_patent_app_number] => 09196515
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/196515 | Shallow doped junctions with a variable profile gradation of dopants | Nov 19, 1998 | Issued |
Array
(
[id] => 1368820
[patent_doc_number] => 06570242
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-05-27
[patent_title] => 'Bipolar transistor with high breakdown voltage collector'
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[patent_app_number] => 09/196375
[patent_app_country] => US
[patent_app_date] => 1998-11-19
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[pdf_file] => patents/06/570/06570242.pdf
[firstpage_image] =>[orig_patent_app_number] => 09196375
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/196375 | Bipolar transistor with high breakdown voltage collector | Nov 18, 1998 | Issued |
Array
(
[id] => 1497000
[patent_doc_number] => 06404012
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-06-11
[patent_title] => 'Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer'
[patent_app_type] => B1
[patent_app_number] => 09/190448
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[firstpage_image] =>[orig_patent_app_number] => 09190448
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/190448 | Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer | Nov 12, 1998 | Issued |
Array
(
[id] => 4090786
[patent_doc_number] => 06025630
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-02-15
[patent_title] => 'Insulating film formed using an organic silane and method of producing semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 9/190828
[patent_app_country] => US
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[pdf_file] => patents/06/025/06025630.pdf
[firstpage_image] =>[orig_patent_app_number] => 190828
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/190828 | Insulating film formed using an organic silane and method of producing semiconductor device | Nov 11, 1998 | Issued |
Array
(
[id] => 3952869
[patent_doc_number] => 05998833
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-12-07
[patent_title] => 'Power semiconductor devices having improved high frequency switching and breakdown characteristics'
[patent_app_type] => 1
[patent_app_number] => 9/178845
[patent_app_country] => US
[patent_app_date] => 1998-10-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
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[patent_no_of_words] => 7950
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[pdf_file] => patents/05/998/05998833.pdf
[firstpage_image] =>[orig_patent_app_number] => 178845
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/178845 | Power semiconductor devices having improved high frequency switching and breakdown characteristics | Oct 25, 1998 | Issued |
| 09/177575 | SEMICONDUCTOR DEVICE HAVING EPITAXIAL LAYER WITH DIFFERENT THICKNESS | Oct 22, 1998 | Abandoned |
Array
(
[id] => 6946980
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[patent_issue_date] => 2001-09-13
[patent_title] => 'INSULATED GATE BIPOLAR TRANSISTOR'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/175424 | Insulated gate bipolar transistor | Oct 19, 1998 | Issued |