
Nathan Erb
Examiner (ID: 2063, Phone: (571)272-7606 , Office: P/3628 )
| Most Active Art Unit | 3628 |
| Art Unit(s) | 3628, 3639 |
| Total Applications | 731 |
| Issued Applications | 328 |
| Pending Applications | 77 |
| Abandoned Applications | 335 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 3947288
[patent_doc_number] => 05981997
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-11-09
[patent_title] => 'Horizontal field effect transistor and method of manufacturing the same'
[patent_app_type] => 1
[patent_app_number] => 8/821460
[patent_app_country] => US
[patent_app_date] => 1997-03-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 5
[patent_no_of_words] => 2963
[patent_no_of_claims] => 10
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 189
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/981/05981997.pdf
[firstpage_image] =>[orig_patent_app_number] => 821460
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/821460 | Horizontal field effect transistor and method of manufacturing the same | Mar 20, 1997 | Issued |
Array
(
[id] => 4002603
[patent_doc_number] => 05923055
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-07-13
[patent_title] => 'Controllable semiconductor component'
[patent_app_type] => 1
[patent_app_number] => 8/809848
[patent_app_country] => US
[patent_app_date] => 1997-03-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
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[patent_no_of_words] => 10889
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[pdf_file] => patents/05/923/05923055.pdf
[firstpage_image] =>[orig_patent_app_number] => 809848
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/809848 | Controllable semiconductor component | Mar 20, 1997 | Issued |
Array
(
[id] => 3933009
[patent_doc_number] => 05877528
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-03-02
[patent_title] => 'Structure to provide effective channel-stop in termination areas for trenched power transistors'
[patent_app_type] => 1
[patent_app_number] => 8/810546
[patent_app_country] => US
[patent_app_date] => 1997-03-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
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[patent_no_of_words] => 4289
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[pdf_file] => patents/05/877/05877528.pdf
[firstpage_image] =>[orig_patent_app_number] => 810546
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/810546 | Structure to provide effective channel-stop in termination areas for trenched power transistors | Mar 2, 1997 | Issued |
Array
(
[id] => 3879083
[patent_doc_number] => 05763922
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-09
[patent_title] => 'CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers'
[patent_app_type] => 1
[patent_app_number] => 8/810682
[patent_app_country] => US
[patent_app_date] => 1997-02-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
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[patent_no_of_words] => 4832
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[pdf_file] => patents/05/763/05763922.pdf
[firstpage_image] =>[orig_patent_app_number] => 810682
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/810682 | CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers | Feb 27, 1997 | Issued |
Array
(
[id] => 3845332
[patent_doc_number] => 05744836
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-04-28
[patent_title] => 'Insulating gate type field effect transistor'
[patent_app_type] => 1
[patent_app_number] => 8/808170
[patent_app_country] => US
[patent_app_date] => 1997-02-28
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 808170
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/808170 | Insulating gate type field effect transistor | Feb 27, 1997 | Issued |
Array
(
[id] => 3836887
[patent_doc_number] => 05814860
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-09-29
[patent_title] => 'Semiconductor IC device having first and second pads on surface of semiconductor chip'
[patent_app_type] => 1
[patent_app_number] => 8/804828
[patent_app_country] => US
[patent_app_date] => 1997-02-24
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[pdf_file] => patents/05/814/05814860.pdf
[firstpage_image] =>[orig_patent_app_number] => 804828
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/804828 | Semiconductor IC device having first and second pads on surface of semiconductor chip | Feb 23, 1997 | Issued |
Array
(
[id] => 4027166
[patent_doc_number] => 05925923
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-07-20
[patent_title] => 'Merged single polysilicon bipolar NPN transistor'
[patent_app_type] => 1
[patent_app_number] => 8/803122
[patent_app_country] => US
[patent_app_date] => 1997-02-20
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[patent_no_of_words] => 1326
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[pdf_file] => patents/05/925/05925923.pdf
[firstpage_image] =>[orig_patent_app_number] => 803122
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/803122 | Merged single polysilicon bipolar NPN transistor | Feb 19, 1997 | Issued |
Array
(
[id] => 3835913
[patent_doc_number] => 05739578
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-04-14
[patent_title] => 'High power transistor with contact plugs extended from collectors through a substrate to have ends connected together in an indent in the substrate'
[patent_app_type] => 1
[patent_app_number] => 8/800376
[patent_app_country] => US
[patent_app_date] => 1997-02-14
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_no_of_words] => 2084
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[pdf_file] => patents/05/739/05739578.pdf
[firstpage_image] =>[orig_patent_app_number] => 800376
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/800376 | High power transistor with contact plugs extended from collectors through a substrate to have ends connected together in an indent in the substrate | Feb 13, 1997 | Issued |
Array
(
[id] => 3845463
[patent_doc_number] => 05744845
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-04-28
[patent_title] => 'Complementary MOS field effect transistor with tunnel effect means'
[patent_app_type] => 1
[patent_app_number] => 8/800147
[patent_app_country] => US
[patent_app_date] => 1997-02-13
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/744/05744845.pdf
[firstpage_image] =>[orig_patent_app_number] => 800147
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/800147 | Complementary MOS field effect transistor with tunnel effect means | Feb 12, 1997 | Issued |
Array
(
[id] => 3835624
[patent_doc_number] => 05739559
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-04-14
[patent_title] => 'Compound semiconductor integrated circuit with a particular high resistance layer'
[patent_app_type] => 1
[patent_app_number] => 8/798450
[patent_app_country] => US
[patent_app_date] => 1997-02-10
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/739/05739559.pdf
[firstpage_image] =>[orig_patent_app_number] => 798450
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/798450 | Compound semiconductor integrated circuit with a particular high resistance layer | Feb 9, 1997 | Issued |
Array
(
[id] => 4049298
[patent_doc_number] => 05912496
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-06-15
[patent_title] => 'Semiconductor device having power MOS transistor including parasitic transistor'
[patent_app_type] => 1
[patent_app_number] => 8/795630
[patent_app_country] => US
[patent_app_date] => 1997-02-06
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[pdf_file] => patents/05/912/05912496.pdf
[firstpage_image] =>[orig_patent_app_number] => 795630
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/795630 | Semiconductor device having power MOS transistor including parasitic transistor | Feb 5, 1997 | Issued |
Array
(
[id] => 3780269
[patent_doc_number] => 05808344
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-09-15
[patent_title] => 'Single-transistor logic and CMOS inverters'
[patent_app_type] => 1
[patent_app_number] => 8/795714
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/795714 | Single-transistor logic and CMOS inverters | Feb 3, 1997 | Issued |
Array
(
[id] => 3835809
[patent_doc_number] => 05739572
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-04-14
[patent_title] => 'High voltage semiconductor device'
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Array
(
[id] => 3931796
[patent_doc_number] => 05952696
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[patent_kind] => NA
[patent_issue_date] => 1999-09-14
[patent_title] => 'Complementary metal oxide semiconductor device with selective doping'
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[patent_app_number] => 8/792196
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[pdf_file] => patents/05/952/05952696.pdf
[firstpage_image] =>[orig_patent_app_number] => 792196
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/792196 | Complementary metal oxide semiconductor device with selective doping | Jan 29, 1997 | Issued |
Array
(
[id] => 4179830
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[patent_kind] => NA
[patent_issue_date] => 2000-07-04
[patent_title] => 'MOSFET with gradiently doped polysilicon gate electrode'
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[firstpage_image] =>[orig_patent_app_number] => 791030
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Array
(
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[firstpage_image] =>[orig_patent_app_number] => 788561
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Array
(
[id] => 3835610
[patent_doc_number] => 05739558
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[patent_kind] => NA
[patent_issue_date] => 1998-04-14
[patent_title] => 'High electron mobility transistor including asymmetrical carrier supply layers sandwiching a channel layer'
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Array
(
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[patent_doc_number] => 05747855
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Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/779514 | Insulated gate thyristor | Jan 7, 1997 | Issued |
Array
(
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[pdf_file] => patents/05/895/05895957.pdf
[firstpage_image] =>[orig_patent_app_number] => 778669
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/778669 | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer | Jan 2, 1997 | Issued |