
Nathan Erb
Examiner (ID: 2063, Phone: (571)272-7606 , Office: P/3628 )
| Most Active Art Unit | 3628 |
| Art Unit(s) | 3628, 3639 |
| Total Applications | 731 |
| Issued Applications | 328 |
| Pending Applications | 77 |
| Abandoned Applications | 335 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4054143
[patent_doc_number] => 05869874
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-02-09
[patent_title] => 'Field effect transistor with barrier layer'
[patent_app_type] => 1
[patent_app_number] => 8/778312
[patent_app_country] => US
[patent_app_date] => 1997-01-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 7
[patent_no_of_words] => 2711
[patent_no_of_claims] => 7
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[patent_words_short_claim] => 132
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/869/05869874.pdf
[firstpage_image] =>[orig_patent_app_number] => 778312
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/778312 | Field effect transistor with barrier layer | Jan 1, 1997 | Issued |
Array
(
[id] => 3766736
[patent_doc_number] => 05844294
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-12-01
[patent_title] => 'Semiconductor substrate with SOI structure'
[patent_app_type] => 1
[patent_app_number] => 8/774424
[patent_app_country] => US
[patent_app_date] => 1996-12-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
[patent_figures_cnt] => 26
[patent_no_of_words] => 5262
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[pdf_file] => patents/05/844/05844294.pdf
[firstpage_image] =>[orig_patent_app_number] => 774424
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/774424 | Semiconductor substrate with SOI structure | Dec 29, 1996 | Issued |
Array
(
[id] => 3879245
[patent_doc_number] => 05763934
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-09
[patent_title] => 'Integrated electronic device with reduced parasitic currents, and corresponding methods'
[patent_app_type] => 1
[patent_app_number] => 8/774140
[patent_app_country] => US
[patent_app_date] => 1996-12-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[patent_no_of_words] => 2501
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[pdf_file] => patents/05/763/05763934.pdf
[firstpage_image] =>[orig_patent_app_number] => 774140
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/774140 | Integrated electronic device with reduced parasitic currents, and corresponding methods | Dec 23, 1996 | Issued |
Array
(
[id] => 3845147
[patent_doc_number] => 05847437
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-12-08
[patent_title] => 'Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby'
[patent_app_type] => 1
[patent_app_number] => 8/780088
[patent_app_country] => US
[patent_app_date] => 1996-12-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
[patent_figures_cnt] => 10
[patent_no_of_words] => 2816
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[pdf_file] => patents/05/847/05847437.pdf
[firstpage_image] =>[orig_patent_app_number] => 780088
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/780088 | Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby | Dec 22, 1996 | Issued |
Array
(
[id] => 4038452
[patent_doc_number] => 05942773
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-08-24
[patent_title] => 'Field effect transistor with reduced delay variation'
[patent_app_type] => 1
[patent_app_number] => 8/779958
[patent_app_country] => US
[patent_app_date] => 1996-12-23
[patent_effective_date] => 0000-00-00
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[patent_no_of_words] => 8282
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[pdf_file] => patents/05/942/05942773.pdf
[firstpage_image] =>[orig_patent_app_number] => 779958
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/779958 | Field effect transistor with reduced delay variation | Dec 22, 1996 | Issued |
Array
(
[id] => 4021981
[patent_doc_number] => 05907164
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-05-25
[patent_title] => 'InAlAs/InGaAs heterojunction field effect type semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 8/767372
[patent_app_country] => US
[patent_app_date] => 1996-12-16
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/907/05907164.pdf
[firstpage_image] =>[orig_patent_app_number] => 767372
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/767372 | InAlAs/InGaAs heterojunction field effect type semiconductor device | Dec 15, 1996 | Issued |
Array
(
[id] => 4057291
[patent_doc_number] => 05932911
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-08-03
[patent_title] => 'Bar field effect transistor'
[patent_app_type] => 1
[patent_app_number] => 8/766494
[patent_app_country] => US
[patent_app_date] => 1996-12-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[pdf_file] => patents/05/932/05932911.pdf
[firstpage_image] =>[orig_patent_app_number] => 766494
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/766494 | Bar field effect transistor | Dec 12, 1996 | Issued |
Array
(
[id] => 3933217
[patent_doc_number] => 05877540
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-03-02
[patent_title] => 'Epitaxial-base bipolar transistor'
[patent_app_type] => 1
[patent_app_number] => 8/766856
[patent_app_country] => US
[patent_app_date] => 1996-12-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
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[patent_no_of_words] => 7126
[patent_no_of_claims] => 15
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/877/05877540.pdf
[firstpage_image] =>[orig_patent_app_number] => 766856
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/766856 | Epitaxial-base bipolar transistor | Dec 12, 1996 | Issued |
Array
(
[id] => 3882946
[patent_doc_number] => 05747880
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-05-05
[patent_title] => 'Interconnect structure with an integrated low density dielectric'
[patent_app_type] => 1
[patent_app_number] => 8/751901
[patent_app_country] => US
[patent_app_date] => 1996-11-18
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
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[pdf_file] => patents/05/747/05747880.pdf
[firstpage_image] =>[orig_patent_app_number] => 751901
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/751901 | Interconnect structure with an integrated low density dielectric | Nov 17, 1996 | Issued |
Array
(
[id] => 3980423
[patent_doc_number] => 05917209
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-06-29
[patent_title] => 'Semiconductor device including via hole and isolating circumferential member'
[patent_app_type] => 1
[patent_app_number] => 8/744456
[patent_app_country] => US
[patent_app_date] => 1996-11-07
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
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[patent_no_of_words] => 10254
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[pdf_file] => patents/05/917/05917209.pdf
[firstpage_image] =>[orig_patent_app_number] => 744456
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/744456 | Semiconductor device including via hole and isolating circumferential member | Nov 6, 1996 | Issued |
Array
(
[id] => 3980532
[patent_doc_number] => 05917216
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-06-29
[patent_title] => 'Trenched field effect transistor with PN depletion barrier'
[patent_app_type] => 1
[patent_app_number] => 8/742326
[patent_app_country] => US
[patent_app_date] => 1996-10-31
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/917/05917216.pdf
[firstpage_image] =>[orig_patent_app_number] => 742326
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/742326 | Trenched field effect transistor with PN depletion barrier | Oct 30, 1996 | Issued |
Array
(
[id] => 3885699
[patent_doc_number] => 05798560
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-08-25
[patent_title] => 'Semiconductor integrated circuit having a spark killer diode'
[patent_app_type] => 1
[patent_app_number] => 8/742184
[patent_app_country] => US
[patent_app_date] => 1996-10-30
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[pdf_file] => patents/05/798/05798560.pdf
[firstpage_image] =>[orig_patent_app_number] => 742184
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/742184 | Semiconductor integrated circuit having a spark killer diode | Oct 29, 1996 | Issued |
Array
(
[id] => 3943315
[patent_doc_number] => 05872377
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-02-16
[patent_title] => 'Power semiconductor devices having highly integrated unit cells therein'
[patent_app_type] => 1
[patent_app_number] => 8/730792
[patent_app_country] => US
[patent_app_date] => 1996-10-16
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/872/05872377.pdf
[firstpage_image] =>[orig_patent_app_number] => 730792
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/730792 | Power semiconductor devices having highly integrated unit cells therein | Oct 15, 1996 | Issued |
Array
(
[id] => 3812323
[patent_doc_number] => 05831308
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-11-03
[patent_title] => 'MOSFET having a particular SOI structure'
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[patent_app_number] => 8/731468
[patent_app_country] => US
[patent_app_date] => 1996-10-15
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[pdf_file] => patents/05/831/05831308.pdf
[firstpage_image] =>[orig_patent_app_number] => 731468
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/731468 | MOSFET having a particular SOI structure | Oct 14, 1996 | Issued |
Array
(
[id] => 3998122
[patent_doc_number] => 05892248
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-04-06
[patent_title] => 'Double photoresist layer self-aligned heterojuction bipolar transistor'
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[patent_app_number] => 8/720388
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[pdf_file] => patents/05/892/05892248.pdf
[firstpage_image] =>[orig_patent_app_number] => 720388
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/720388 | Double photoresist layer self-aligned heterojuction bipolar transistor | Sep 29, 1996 | Issued |
Array
(
[id] => 3882515
[patent_doc_number] => 05747851
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-05-05
[patent_title] => 'Semiconductor device with reduced breakdown voltage between the gate electrode and semiconductor surface'
[patent_app_type] => 1
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[pdf_file] => patents/05/747/05747851.pdf
[firstpage_image] =>[orig_patent_app_number] => 723804
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/723804 | Semiconductor device with reduced breakdown voltage between the gate electrode and semiconductor surface | Sep 29, 1996 | Issued |
Array
(
[id] => 3780409
[patent_doc_number] => 05808352
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-09-15
[patent_title] => 'Semiconductor apparatus having crystal defects'
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[patent_app_number] => 8/716420
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[pdf_file] => patents/05/808/05808352.pdf
[firstpage_image] =>[orig_patent_app_number] => 716420
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/716420 | Semiconductor apparatus having crystal defects | Sep 19, 1996 | Issued |
Array
(
[id] => 3794680
[patent_doc_number] => 05841181
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-11-24
[patent_title] => 'Semiconductor apparatus having field limiting rings'
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[firstpage_image] =>[orig_patent_app_number] => 716412
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/716412 | Semiconductor apparatus having field limiting rings | Sep 19, 1996 | Issued |
Array
(
[id] => 3745827
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[patent_title] => 'Field effect transistor'
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[pdf_file] => patents/05/786/05786610.pdf
[firstpage_image] =>[orig_patent_app_number] => 715414
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/715414 | Field effect transistor | Sep 17, 1996 | Issued |
Array
(
[id] => 3883425
[patent_doc_number] => 05729044
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[patent_issue_date] => 1998-03-17
[patent_title] => 'Protection diode for a vertical semiconductor component'
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/729/05729044.pdf
[firstpage_image] =>[orig_patent_app_number] => 713956
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/713956 | Protection diode for a vertical semiconductor component | Sep 11, 1996 | Issued |