| Application number | Title of the application | Filing Date | Status |
|---|
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Array
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[patent_issue_date] => 2003-10-21
[patent_title] => 'Method for producing czochralski silicon free of agglomerated self-interstitial defects'
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[patent_doc_number] => 06492240
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[patent_issue_date] => 2002-12-10
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[patent_doc_number] => 06437435
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[patent_issue_date] => 2002-08-20
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Array
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[patent_issue_date] => 2003-12-09
[patent_title] => 'Reverse mask and oxide layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems'
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[patent_app_number] => 09/640080
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/640080 | Reverse mask and oxide layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems | Aug 16, 2000 | Issued |
| 09/638410 | Use of sub-melt laser annealing and low temperature rapid thermal annealing to form ultrashallow junctions in semiconductor wafers | Aug 10, 2000 | Abandoned |
Array
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[patent_issue_date] => 2003-04-22
[patent_title] => 'Semiconductor device with alternating conductivity type layer and method of manufacturing the same'
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