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Paul J. Hirsch

Examiner (ID: 2370)

Most Active Art Unit
3303
Art Unit(s)
3732, 3747, 1804, 3753, 3739, 3303, 3616, 3754, 2899, 3202
Total Applications
2050
Issued Applications
1812
Pending Applications
99
Abandoned Applications
139

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 2930296 [patent_doc_number] => 05219785 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1993-06-15 [patent_title] => 'Method of forming current barriers in semiconductor lasers' [patent_app_type] => 1 [patent_app_number] => 7/557901 [patent_app_country] => US [patent_app_date] => 1990-07-25 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 13 [patent_no_of_words] => 6254 [patent_no_of_claims] => 13 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 173 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/219/05219785.pdf [firstpage_image] =>[orig_patent_app_number] => 557901 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/557901
Method of forming current barriers in semiconductor lasers Jul 24, 1990 Issued
Array ( [id] => 2971251 [patent_doc_number] => 05194406 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1993-03-16 [patent_title] => 'Installation for transport and processing under a pulsating double-floating condition' [patent_app_type] => 1 [patent_app_number] => 7/474818 [patent_app_country] => US [patent_app_date] => 1990-07-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 23 [patent_figures_cnt] => 94 [patent_no_of_words] => 10259 [patent_no_of_claims] => 27 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 85 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/194/05194406.pdf [firstpage_image] =>[orig_patent_app_number] => 474818 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/474818
Installation for transport and processing under a pulsating double-floating condition Jul 23, 1990 Issued
07/556611 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SCHOTTKY ELECTRODES Jul 23, 1990 Abandoned
Array ( [id] => 2946398 [patent_doc_number] => 05180690 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1993-01-19 [patent_title] => 'Method of forming a layer of doped crystalline semiconductor alloy material' [patent_app_type] => 1 [patent_app_number] => 7/551684 [patent_app_country] => US [patent_app_date] => 1990-07-09 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 3 [patent_no_of_words] => 6292 [patent_no_of_claims] => 32 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 205 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/180/05180690.pdf [firstpage_image] =>[orig_patent_app_number] => 551684 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/551684
Method of forming a layer of doped crystalline semiconductor alloy material Jul 8, 1990 Issued
Array ( [id] => 2669099 [patent_doc_number] => 04999313 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-03-12 [patent_title] => 'Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material' [patent_app_type] => 1 [patent_app_number] => 7/528916 [patent_app_country] => US [patent_app_date] => 1990-05-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 13 [patent_figures_cnt] => 32 [patent_no_of_words] => 5933 [patent_no_of_claims] => 3 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 151 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/04/999/04999313.pdf [firstpage_image] =>[orig_patent_app_number] => 528916 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/528916
Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material May 28, 1990 Issued
07/520982 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH PHOTORESIST ON A SILICON OXIDE LAYER ON A SEMICONDUCTOR SUBSTRATE IS STRIPPED May 6, 1990 Abandoned
Array ( [id] => 3027759 [patent_doc_number] => 05316974 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1994-05-31 [patent_title] => 'Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer' [patent_app_type] => 1 [patent_app_number] => 7/516637 [patent_app_country] => US [patent_app_date] => 1990-04-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 8 [patent_no_of_words] => 1799 [patent_no_of_claims] => 12 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 103 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/316/05316974.pdf [firstpage_image] =>[orig_patent_app_number] => 516637 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/516637
Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer Apr 29, 1990 Issued
07/515640 PROCESS FOR THE FORMATION OF A POLYCRYSTALLINE SEMICONDUCTOR FILM BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION METHOD Apr 26, 1990 Abandoned
07/506182 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Apr 8, 1990 Abandoned
07/504699 METHOD FOR THE MANUFACTURE OF BORON-CONTAINING FILMS Apr 4, 1990 Abandoned
Array ( [id] => 2814377 [patent_doc_number] => 05122482 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1992-06-16 [patent_title] => 'Method for treating surface of silicon' [patent_app_type] => 1 [patent_app_number] => 7/498221 [patent_app_country] => US [patent_app_date] => 1990-03-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 6 [patent_no_of_words] => 3562 [patent_no_of_claims] => 37 [patent_no_of_ind_claims] => 5 [patent_words_short_claim] => 129 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/122/05122482.pdf [firstpage_image] =>[orig_patent_app_number] => 498221 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/498221
Method for treating surface of silicon Mar 22, 1990 Issued
Array ( [id] => 2722815 [patent_doc_number] => 05024969 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-06-18 [patent_title] => 'Hybrid circuit structure fabrication methods using high energy electron beam curing' [patent_app_type] => 1 [patent_app_number] => 7/484376 [patent_app_country] => US [patent_app_date] => 1990-02-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 2 [patent_no_of_words] => 2316 [patent_no_of_claims] => 8 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 123 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/024/05024969.pdf [firstpage_image] =>[orig_patent_app_number] => 484376 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/484376
Hybrid circuit structure fabrication methods using high energy electron beam curing Feb 22, 1990 Issued
Array ( [id] => 2644802 [patent_doc_number] => 04980304 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1990-12-25 [patent_title] => 'Process for fabricating a bipolar transistor with a self-aligned contact' [patent_app_type] => 1 [patent_app_number] => 7/482437 [patent_app_country] => US [patent_app_date] => 1990-02-20 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 10 [patent_no_of_words] => 4027 [patent_no_of_claims] => 5 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 312 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/04/980/04980304.pdf [firstpage_image] =>[orig_patent_app_number] => 482437 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/482437
Process for fabricating a bipolar transistor with a self-aligned contact Feb 19, 1990 Issued
Array ( [id] => 2706147 [patent_doc_number] => 04981818 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-01-01 [patent_title] => 'Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors' [patent_app_type] => 1 [patent_app_number] => 7/479486 [patent_app_country] => US [patent_app_date] => 1990-02-13 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 1835 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 116 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/04/981/04981818.pdf [firstpage_image] =>[orig_patent_app_number] => 479486 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/479486
Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors Feb 12, 1990 Issued
07/477532 METHOD FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL BY PLASA-INDUCED VAPOR PHASE DEPOSITION Feb 8, 1990 Abandoned
07/477012 HYDROGEN PLASMA PASSIVATION OF GAAS Feb 6, 1990 Abandoned
07/474610 APPARATUS AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICES Feb 4, 1990 Abandoned
Array ( [id] => 2706454 [patent_doc_number] => 05055421 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-10-08 [patent_title] => 'Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons' [patent_app_type] => 1 [patent_app_number] => 7/458716 [patent_app_country] => US [patent_app_date] => 1990-02-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 1 [patent_no_of_words] => 2638 [patent_no_of_claims] => 11 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 107 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/055/05055421.pdf [firstpage_image] =>[orig_patent_app_number] => 458716 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/458716
Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons Feb 4, 1990 Issued
Array ( [id] => 3098285 [patent_doc_number] => 05314845 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1994-05-24 [patent_title] => 'Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer' [patent_app_type] => 1 [patent_app_number] => 7/474177 [patent_app_country] => US [patent_app_date] => 1990-02-02 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 3 [patent_no_of_words] => 3982 [patent_no_of_claims] => 24 [patent_no_of_ind_claims] => 4 [patent_words_short_claim] => 174 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/314/05314845.pdf [firstpage_image] =>[orig_patent_app_number] => 474177 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/474177
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer Feb 1, 1990 Issued
Array ( [id] => 2727383 [patent_doc_number] => 05039358 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-08-13 [patent_title] => 'Amorphous, hydrogenated carbon electroactive passivation layer' [patent_app_type] => 1 [patent_app_number] => 7/473577 [patent_app_country] => US [patent_app_date] => 1990-02-01 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 1605 [patent_no_of_claims] => 14 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 60 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/039/05039358.pdf [firstpage_image] =>[orig_patent_app_number] => 473577 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/473577
Amorphous, hydrogenated carbon electroactive passivation layer Jan 31, 1990 Issued
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