| Application number | Title of the application | Filing Date | Status |
|---|
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[patent_doc_number] => 06987285
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[patent_kind] => B2
[patent_issue_date] => 2006-01-17
[patent_title] => 'Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding'
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[patent_issue_date] => 2005-11-29
[patent_title] => 'Thin film transistor array panel used for a liquid crystal display and a manufacturing method thereof'
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[patent_title] => 'Method for forming a gate electrode in a semiconductor device'
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