Search

Raymond J. Henley Iii

Examiner (ID: 7179, Phone: (571)272-0575 , Office: P/1629 )

Most Active Art Unit
1614
Art Unit(s)
1205, 2899, 1629, 1614, 1621
Total Applications
4324
Issued Applications
3034
Pending Applications
603
Abandoned Applications
710

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 18854220 [patent_doc_number] => 11851784 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2023-12-26 [patent_title] => Apparatus and method for growing high-purity semi-insulating silicon carbide crystal [patent_app_type] => utility [patent_app_number] => 17/286358 [patent_app_country] => US [patent_app_date] => 2019-10-14 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 2 [patent_no_of_words] => 4510 [patent_no_of_claims] => 10 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 379 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17286358 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/286358
Apparatus and method for growing high-purity semi-insulating silicon carbide crystal Oct 13, 2019 Issued
Array ( [id] => 17075212 [patent_doc_number] => 11111599 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2021-09-07 [patent_title] => Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder [patent_app_type] => utility [patent_app_number] => 16/559875 [patent_app_country] => US [patent_app_date] => 2019-09-04 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 2 [patent_no_of_words] => 3061 [patent_no_of_claims] => 8 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 151 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16559875 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/559875
Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder Sep 3, 2019 Issued
Array ( [id] => 15769599 [patent_doc_number] => 20200115817 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-04-16 [patent_title] => PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL, PRODUCTION METHOD FOR GALLIUM OXIDE CRYSTAL, AND CRUCIBLE FOR GROWING GALLIUM OXIDE CRYSTAL USED THEREFOR [patent_app_type] => utility [patent_app_number] => 16/557242 [patent_app_country] => US [patent_app_date] => 2019-08-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5371 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -2 [patent_words_short_claim] => 41 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16557242 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/557242
PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL, PRODUCTION METHOD FOR GALLIUM OXIDE CRYSTAL, AND CRUCIBLE FOR GROWING GALLIUM OXIDE CRYSTAL USED THEREFOR Aug 29, 2019 Abandoned
Array ( [id] => 16999799 [patent_doc_number] => 11078599 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2021-08-03 [patent_title] => Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatus [patent_app_type] => utility [patent_app_number] => 16/555583 [patent_app_country] => US [patent_app_date] => 2019-08-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 9 [patent_no_of_words] => 5485 [patent_no_of_claims] => 17 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 153 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16555583 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/555583
Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatus Aug 28, 2019 Issued
Array ( [id] => 15650567 [patent_doc_number] => 20200087813 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-03-19 [patent_title] => Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate [patent_app_type] => utility [patent_app_number] => 16/550947 [patent_app_country] => US [patent_app_date] => 2019-08-26 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 15528 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => 0 [patent_words_short_claim] => 248 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16550947 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/550947
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate Aug 25, 2019 Issued
Array ( [id] => 19013338 [patent_doc_number] => 11920256 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2024-03-05 [patent_title] => Method for growing rare earth oxide crystal on a semiconductor substrate [patent_app_type] => utility [patent_app_number] => 17/628505 [patent_app_country] => US [patent_app_date] => 2019-08-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 7 [patent_figures_cnt] => 16 [patent_no_of_words] => 3497 [patent_no_of_claims] => 15 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 142 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17628505 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/628505
Method for growing rare earth oxide crystal on a semiconductor substrate Aug 4, 2019 Issued
Array ( [id] => 17126650 [patent_doc_number] => 20210301419 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-09-30 [patent_title] => METHOD FOR PRODUCING GaN LAMINATE SUBSTRATE [patent_app_type] => utility [patent_app_number] => 17/266178 [patent_app_country] => US [patent_app_date] => 2019-08-01 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 8527 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -12 [patent_words_short_claim] => 246 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17266178 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/266178
Method for producing GaN laminate substrate having front surface which is Ga polarity surface Jul 31, 2019 Issued
Array ( [id] => 17156544 [patent_doc_number] => 20210317595 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-10-14 [patent_title] => METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL INGOT AND APPARATUS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL INGOT [patent_app_type] => utility [patent_app_number] => 17/268189 [patent_app_country] => US [patent_app_date] => 2019-07-26 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 12713 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 46 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17268189 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/268189
Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material Jul 25, 2019 Issued
Array ( [id] => 15932139 [patent_doc_number] => 20200157703 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-05-21 [patent_title] => BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON [patent_app_type] => utility [patent_app_number] => 16/522059 [patent_app_country] => US [patent_app_date] => 2019-07-25 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3135 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -13 [patent_words_short_claim] => 90 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16522059 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/522059
BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON Jul 24, 2019 Abandoned
Array ( [id] => 16191270 [patent_doc_number] => 20200232119 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-07-23 [patent_title] => METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE [patent_app_type] => utility [patent_app_number] => 16/520544 [patent_app_country] => US [patent_app_date] => 2019-07-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 4114 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 72 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16520544 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/520544
METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE Jul 23, 2019 Abandoned
Array ( [id] => 17060424 [patent_doc_number] => 11105016 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2021-08-31 [patent_title] => Crystal growth apparatus with controlled center position of heating [patent_app_type] => utility [patent_app_number] => 16/519242 [patent_app_country] => US [patent_app_date] => 2019-07-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 5 [patent_no_of_words] => 4808 [patent_no_of_claims] => 13 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 134 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16519242 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/519242
Crystal growth apparatus with controlled center position of heating Jul 22, 2019 Issued
Array ( [id] => 16369382 [patent_doc_number] => 10801125 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2020-10-13 [patent_title] => Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly [patent_app_type] => utility [patent_app_number] => 16/512756 [patent_app_country] => US [patent_app_date] => 2019-07-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 8 [patent_figures_cnt] => 13 [patent_no_of_words] => 7514 [patent_no_of_claims] => 20 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 164 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512756 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/512756
Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly Jul 15, 2019 Issued
Array ( [id] => 15408895 [patent_doc_number] => 20200024769 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-23 [patent_title] => PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD [patent_app_type] => utility [patent_app_number] => 16/512669 [patent_app_country] => US [patent_app_date] => 2019-07-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5232 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 42 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512669 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/512669
Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness Jul 15, 2019 Issued
Array ( [id] => 15414817 [patent_doc_number] => 20200027731 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-23 [patent_title] => FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE [patent_app_type] => utility [patent_app_number] => 16/512447 [patent_app_country] => US [patent_app_date] => 2019-07-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3964 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -16 [patent_words_short_claim] => 51 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512447 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/512447
FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Jul 15, 2019 Abandoned
Array ( [id] => 15442597 [patent_doc_number] => 20200035482 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-30 [patent_title] => Buffer layer for Gallium Nitride-on-Silicon epitaxy [patent_app_type] => utility [patent_app_number] => 16/510547 [patent_app_country] => US [patent_app_date] => 2019-07-12 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5469 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 122 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16510547 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/510547
Buffer layer for Gallium Nitride-on-Silicon epitaxy Jul 11, 2019 Abandoned
Array ( [id] => 15364457 [patent_doc_number] => 20200017993 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-16 [patent_title] => GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL [patent_app_type] => utility [patent_app_number] => 16/508223 [patent_app_country] => US [patent_app_date] => 2019-07-10 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6321 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 56 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16508223 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/508223
Group-III nitride substrate containing carbon at a surface region thereof Jul 9, 2019 Issued
Array ( [id] => 16073413 [patent_doc_number] => 20200190693 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-06-18 [patent_title] => SILICONE CARBIDE CRYSTALS AND MANUFACTURING METHOD THEREOF [patent_app_type] => utility [patent_app_number] => 16/450930 [patent_app_country] => US [patent_app_date] => 2019-06-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3161 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -8 [patent_words_short_claim] => 143 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16450930 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/450930
Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10[?]7 Ohm-cm and manufacturing method therefor Jun 23, 2019 Issued
Array ( [id] => 17010925 [patent_doc_number] => 20210242086 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-08-05 [patent_title] => METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE [patent_app_type] => utility [patent_app_number] => 17/049156 [patent_app_country] => US [patent_app_date] => 2019-05-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 18574 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -22 [patent_words_short_claim] => 71 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17049156 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/049156
METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE May 29, 2019 Abandoned
Array ( [id] => 16947961 [patent_doc_number] => 20210206652 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-07-08 [patent_title] => ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY [patent_app_type] => utility [patent_app_number] => 17/058645 [patent_app_country] => US [patent_app_date] => 2019-05-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 4442 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -18 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17058645 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/058645
ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY May 23, 2019 Abandoned
Array ( [id] => 17752715 [patent_doc_number] => 20220230920 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-07-21 [patent_title] => METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE [patent_app_type] => utility [patent_app_number] => 17/605002 [patent_app_country] => US [patent_app_date] => 2019-05-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6345 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -8 [patent_words_short_claim] => 265 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17605002 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/605002
Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate May 22, 2019 Issued
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