Search

Raymond J. Henley Iii

Examiner (ID: 7179, Phone: (571)272-0575 , Office: P/1629 )

Most Active Art Unit
1614
Art Unit(s)
1205, 2899, 1629, 1614, 1621
Total Applications
4324
Issued Applications
3034
Pending Applications
603
Abandoned Applications
710

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 19404196 [patent_doc_number] => 20240287707 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2024-08-29 [patent_title] => METHOD OF PREPARING A SURFACE OF A SINGLE CRYSTAL WAFER AS AN EPITAXIAL TEMPLATE, EPITAXIAL TEMPLATE AND DEVICE [patent_app_type] => utility [patent_app_number] => 18/571926 [patent_app_country] => US [patent_app_date] => 2021-07-01 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 21896 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -22 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 18571926 [rel_patent_id] =>[rel_patent_doc_number] =>)
18/571926
METHOD OF PREPARING A SURFACE OF A SINGLE CRYSTAL WAFER AS AN EPITAXIAL TEMPLATE, EPITAXIAL TEMPLATE AND DEVICE Jun 30, 2021 Pending
Array ( [id] => 17336573 [patent_doc_number] => 20220002904 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-01-06 [patent_title] => METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL [patent_app_type] => utility [patent_app_number] => 17/359949 [patent_app_country] => US [patent_app_date] => 2021-06-28 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6201 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -5 [patent_words_short_claim] => 71 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17359949 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/359949
Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate Jun 27, 2021 Issued
Array ( [id] => 18566938 [patent_doc_number] => 20230257266 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2023-08-17 [patent_title] => APPARATUS FOR SOLIDIFYING LIQUID SULPHUR INTO ORTHORHOMBIC CRYSTALS AND RELATED METHOD [patent_app_type] => utility [patent_app_number] => 18/011786 [patent_app_country] => US [patent_app_date] => 2021-06-14 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 1849 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -15 [patent_words_short_claim] => 60 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 18011786 [rel_patent_id] =>[rel_patent_doc_number] =>)
18/011786
APPARATUS FOR SOLIDIFYING LIQUID SULPHUR INTO ORTHORHOMBIC CRYSTALS AND RELATED METHOD Jun 13, 2021 Pending
Array ( [id] => 17386141 [patent_doc_number] => 20220033993 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-02-03 [patent_title] => METHOD FOR PURIFYING AN INORGANIC MATERIAL USING A TUBE HAVING A BEND BETWEEN A FIRST END AND A SECOND END OF THE TUBE [patent_app_type] => utility [patent_app_number] => 17/341899 [patent_app_country] => US [patent_app_date] => 2021-06-08 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 20317 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -13 [patent_words_short_claim] => 106 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17341899 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/341899
Method for purifying a thallium compound using a carbon powder Jun 7, 2021 Issued
Array ( [id] => 17135144 [patent_doc_number] => 11136690 [patent_country] => US [patent_kind] => B1 [patent_issue_date] => 2021-10-05 [patent_title] => Method for preparing doped yttrium aluminum garnet single crystal fiber by performing a cylindrical surface polishing operation and growing a cladding layer [patent_app_type] => utility [patent_app_number] => 17/340083 [patent_app_country] => US [patent_app_date] => 2021-06-06 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 8 [patent_figures_cnt] => 11 [patent_no_of_words] => 12732 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 377 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17340083 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/340083
Method for preparing doped yttrium aluminum garnet single crystal fiber by performing a cylindrical surface polishing operation and growing a cladding layer Jun 5, 2021 Issued
Array ( [id] => 18718237 [patent_doc_number] => 11795572 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2023-10-24 [patent_title] => Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal [patent_app_type] => utility [patent_app_number] => 17/329460 [patent_app_country] => US [patent_app_date] => 2021-05-25 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 5 [patent_no_of_words] => 8059 [patent_no_of_claims] => 4 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 334 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17329460 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/329460
Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal May 24, 2021 Issued
Array ( [id] => 17232184 [patent_doc_number] => 20210358741 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-11-18 [patent_title] => METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRECURSORS [patent_app_type] => utility [patent_app_number] => 17/317965 [patent_app_country] => US [patent_app_date] => 2021-05-12 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 9744 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 79 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17317965 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/317965
Methods for silicon germanium uniformity control using multiple precursors May 11, 2021 Issued
Array ( [id] => 19441505 [patent_doc_number] => 12091749 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2024-09-17 [patent_title] => Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet [patent_app_type] => utility [patent_app_number] => 17/317565 [patent_app_country] => US [patent_app_date] => 2021-05-11 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 9 [patent_figures_cnt] => 13 [patent_no_of_words] => 15979 [patent_no_of_claims] => 18 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 364 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17317565 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/317565
Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet May 10, 2021 Issued
Array ( [id] => 17156543 [patent_doc_number] => 20210317594 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-10-14 [patent_title] => METHODS AND APPARATUSES FOR CRYSTAL GROWTH [patent_app_type] => utility [patent_app_number] => 17/242263 [patent_app_country] => US [patent_app_date] => 2021-04-27 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 11948 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -18 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17242263 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/242263
Methods for crystal growth by replacing a sublimated target source material with a candidate source material Apr 26, 2021 Issued
Array ( [id] => 18021153 [patent_doc_number] => 20220372652 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-11-24 [patent_title] => GALLIUM NITRIDE SINGLE CRYSTAL BASED ON A SCALMGO4 SUBSTRATE AND PREPARATION METHOD THEREOF [patent_app_type] => utility [patent_app_number] => 17/761607 [patent_app_country] => US [patent_app_date] => 2021-04-27 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 2535 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 65 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17761607 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/761607
Method for growing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate Apr 26, 2021 Issued
Array ( [id] => 17292687 [patent_doc_number] => 20210388526 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-12-16 [patent_title] => Beta-(AIxGa1-x)2O3 FILMS ON Beta-Ga2O3 SUBSTRATES, METHODS OF MAKING AND USING THE SAME [patent_app_type] => utility [patent_app_number] => 17/231382 [patent_app_country] => US [patent_app_date] => 2021-04-15 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 20492 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -25 [patent_words_short_claim] => 69 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17231382 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/231382
Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3(100) or (-201) substrates by chemical vapor deposition Apr 14, 2021 Issued
Array ( [id] => 16981415 [patent_doc_number] => 20210225652 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-07-22 [patent_title] => CARRIER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL ALONG LASER DAMAGE REGION [patent_app_type] => utility [patent_app_number] => 17/225384 [patent_app_country] => US [patent_app_date] => 2021-04-08 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 25862 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -24 [patent_words_short_claim] => 96 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17225384 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/225384
Carrier-assisted method for parting crystalline material along laser damage region Apr 7, 2021 Issued
Array ( [id] => 18394757 [patent_doc_number] => 20230162978 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2023-05-25 [patent_title] => SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME [patent_app_type] => utility [patent_app_number] => 17/917721 [patent_app_country] => US [patent_app_date] => 2021-04-07 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6586 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -4 [patent_words_short_claim] => 36 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17917721 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/917721
Method of manufacturing a beta-Ga Apr 6, 2021 Issued
Array ( [id] => 18469420 [patent_doc_number] => 20230203704 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2023-06-29 [patent_title] => METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PREVENTING CRACK OCCURRENCE IN GROWTH LAYER [patent_app_type] => utility [patent_app_number] => 17/996091 [patent_app_country] => US [patent_app_date] => 2021-03-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6288 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -18 [patent_words_short_claim] => 33 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17996091 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/996091
Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer Mar 29, 2021 Issued
Array ( [id] => 18391882 [patent_doc_number] => 20230160100 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2023-05-25 [patent_title] => METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR SUPPRESSING INTRODUCTION OF DISPLACEMENT TO GROWTH LAYER [patent_app_type] => utility [patent_app_number] => 17/919194 [patent_app_country] => US [patent_app_date] => 2021-03-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 7727 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -18 [patent_words_short_claim] => 43 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17919194 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/919194
Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer Mar 29, 2021 Issued
Array ( [id] => 20158545 [patent_doc_number] => 12385158 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2025-08-12 [patent_title] => Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes [patent_app_type] => utility [patent_app_number] => 17/996184 [patent_app_country] => US [patent_app_date] => 2021-03-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 10 [patent_figures_cnt] => 10 [patent_no_of_words] => 1065 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 143 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17996184 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/996184
Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes Mar 29, 2021 Issued
Array ( [id] => 17126648 [patent_doc_number] => 20210301417 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-09-30 [patent_title] => CRYSTAL MATERIAL LOADING DEVICE AND CRYSTAL GROWTH DEVICE [patent_app_type] => utility [patent_app_number] => 17/212713 [patent_app_country] => US [patent_app_date] => 2021-03-25 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 7949 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -12 [patent_words_short_claim] => 131 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17212713 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/212713
Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same Mar 24, 2021 Issued
Array ( [id] => 18315361 [patent_doc_number] => 11629432 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2023-04-18 [patent_title] => Metalorganic chemical vapor phase deposition apparatus having bubbler with first supply section leading to reactor, first, second and third mass flow controller and pressure sensor [patent_app_type] => utility [patent_app_number] => 17/211503 [patent_app_country] => US [patent_app_date] => 2021-03-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 3 [patent_no_of_words] => 3316 [patent_no_of_claims] => 7 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 281 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17211503 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/211503
Metalorganic chemical vapor phase deposition apparatus having bubbler with first supply section leading to reactor, first, second and third mass flow controller and pressure sensor Mar 23, 2021 Issued
Array ( [id] => 17115927 [patent_doc_number] => 20210296524 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-09-23 [patent_title] => SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSn [patent_app_type] => utility [patent_app_number] => 17/209133 [patent_app_country] => US [patent_app_date] => 2021-03-22 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3966 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -10 [patent_words_short_claim] => 105 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17209133 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/209133
SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSn Mar 21, 2021 Abandoned
Array ( [id] => 17563603 [patent_doc_number] => 20220127752 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-04-28 [patent_title] => METHOD FOR MANUFACTURING EPITAXIAL FILM AND EPITAXIAL FILM THEREOF [patent_app_type] => utility [patent_app_number] => 17/207961 [patent_app_country] => US [patent_app_date] => 2021-03-22 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3130 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -19 [patent_words_short_claim] => 138 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17207961 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/207961
METHOD FOR MANUFACTURING EPITAXIAL FILM AND EPITAXIAL FILM THEREOF Mar 21, 2021 Abandoned
Menu