| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 1559889
[patent_doc_number] => 06436824
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-08-20
[patent_title] => 'Low dielectric constant materials for copper damascene'
[patent_app_type] => B1
[patent_app_number] => 09/346526
[patent_app_country] => US
[patent_app_date] => 1999-07-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 2370
[patent_no_of_claims] => 28
[patent_no_of_ind_claims] => 6
[patent_words_short_claim] => 33
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/436/06436824.pdf
[firstpage_image] =>[orig_patent_app_number] => 09346526
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/346526 | Low dielectric constant materials for copper damascene | Jul 1, 1999 | Issued |
Array
(
[id] => 1549697
[patent_doc_number] => 06346451
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-02-12
[patent_title] => 'Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode'
[patent_app_type] => B1
[patent_app_number] => 09/343912
[patent_app_country] => US
[patent_app_date] => 1999-06-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 2905
[patent_no_of_claims] => 11
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 204
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/346/06346451.pdf
[firstpage_image] =>[orig_patent_app_number] => 09343912
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/343912 | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode | Jun 29, 1999 | Issued |
| 09/337366 | METHOD FOR PATTERNING DUAL DAMASCENE INTERCONNECTS USING A SACRIFICAL LIGHT ABSORBING MATERIAL | Jun 20, 1999 | Abandoned |
Array
(
[id] => 1553645
[patent_doc_number] => 06348421
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-02-19
[patent_title] => 'Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD'
[patent_app_type] => B1
[patent_app_number] => 09/334288
[patent_app_country] => US
[patent_app_date] => 1999-06-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 8
[patent_no_of_words] => 1736
[patent_no_of_claims] => 10
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 113
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/348/06348421.pdf
[firstpage_image] =>[orig_patent_app_number] => 09334288
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/334288 | Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD | Jun 15, 1999 | Issued |
Array
(
[id] => 4406260
[patent_doc_number] => 06171949
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-01-09
[patent_title] => 'Low energy passivation of conductive material in damascene process for semiconductors'
[patent_app_type] => 1
[patent_app_number] => 9/329155
[patent_app_country] => US
[patent_app_date] => 1999-06-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 2528
[patent_no_of_claims] => 14
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 86
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/171/06171949.pdf
[firstpage_image] =>[orig_patent_app_number] => 329155
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/329155 | Low energy passivation of conductive material in damascene process for semiconductors | Jun 8, 1999 | Issued |
Array
(
[id] => 4271811
[patent_doc_number] => 06323138
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-11-27
[patent_title] => 'Capacitor, methods of forming capacitors, methods for forming silicon nitride layers on silicon-comprising substrates, and methods of densifying silicon nitride layers'
[patent_app_type] => 1
[patent_app_number] => 9/328313
[patent_app_country] => US
[patent_app_date] => 1999-06-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 6
[patent_no_of_words] => 3159
[patent_no_of_claims] => 18
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 28
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/323/06323138.pdf
[firstpage_image] =>[orig_patent_app_number] => 328313
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/328313 | Capacitor, methods of forming capacitors, methods for forming silicon nitride layers on silicon-comprising substrates, and methods of densifying silicon nitride layers | Jun 7, 1999 | Issued |
Array
(
[id] => 4357629
[patent_doc_number] => 06174812
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-01-16
[patent_title] => 'Copper damascene technology for ultra large scale integration circuits'
[patent_app_type] => 1
[patent_app_number] => 9/328246
[patent_app_country] => US
[patent_app_date] => 1999-06-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 15
[patent_no_of_words] => 1781
[patent_no_of_claims] => 12
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 118
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/174/06174812.pdf
[firstpage_image] =>[orig_patent_app_number] => 328246
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/328246 | Copper damascene technology for ultra large scale integration circuits | Jun 7, 1999 | Issued |
Array
(
[id] => 4366545
[patent_doc_number] => 06274471
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-14
[patent_title] => 'Method for making high-aspect-ratio contacts on integrated circuits using a borderless pre-opened hard-mask technique'
[patent_app_type] => 1
[patent_app_number] => 9/325953
[patent_app_country] => US
[patent_app_date] => 1999-06-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 6
[patent_no_of_words] => 3362
[patent_no_of_claims] => 20
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 193
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/274/06274471.pdf
[firstpage_image] =>[orig_patent_app_number] => 325953
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/325953 | Method for making high-aspect-ratio contacts on integrated circuits using a borderless pre-opened hard-mask technique | Jun 3, 1999 | Issued |
Array
(
[id] => 1346678
[patent_doc_number] => 06583058
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-06-24
[patent_title] => 'Solid hermetic via and bump fabrication'
[patent_app_type] => B1
[patent_app_number] => 09/326215
[patent_app_country] => US
[patent_app_date] => 1999-06-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 16
[patent_no_of_words] => 2884
[patent_no_of_claims] => 23
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 114
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/583/06583058.pdf
[firstpage_image] =>[orig_patent_app_number] => 09326215
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/326215 | Solid hermetic via and bump fabrication | Jun 3, 1999 | Issued |
Array
(
[id] => 4408771
[patent_doc_number] => 06309983
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-10-30
[patent_title] => 'Low temperature sacrificial oxide formation'
[patent_app_type] => 1
[patent_app_number] => 9/324926
[patent_app_country] => US
[patent_app_date] => 1999-06-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 6
[patent_no_of_words] => 3486
[patent_no_of_claims] => 26
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 97
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/309/06309983.pdf
[firstpage_image] =>[orig_patent_app_number] => 324926
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/324926 | Low temperature sacrificial oxide formation | Jun 2, 1999 | Issued |
Array
(
[id] => 1532568
[patent_doc_number] => 06410416
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-06-25
[patent_title] => 'Article comprising a high-resolution pattern on a non-planar surface and method of making the same'
[patent_app_type] => B1
[patent_app_number] => 09/322471
[patent_app_country] => US
[patent_app_date] => 1999-05-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
[patent_figures_cnt] => 18
[patent_no_of_words] => 4127
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 55
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/410/06410416.pdf
[firstpage_image] =>[orig_patent_app_number] => 09322471
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/322471 | Article comprising a high-resolution pattern on a non-planar surface and method of making the same | May 27, 1999 | Issued |
Array
(
[id] => 4360463
[patent_doc_number] => 06302312
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-10-16
[patent_title] => 'Bonding apparatus and method'
[patent_app_type] => 1
[patent_app_number] => 9/322801
[patent_app_country] => US
[patent_app_date] => 1999-05-27
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 2489
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 166
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/302/06302312.pdf
[firstpage_image] =>[orig_patent_app_number] => 322801
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/322801 | Bonding apparatus and method | May 26, 1999 | Issued |
Array
(
[id] => 1565643
[patent_doc_number] => 06376285
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-04-23
[patent_title] => 'Annealed porous silicon with epitaxial layer for SOI'
[patent_app_type] => B1
[patent_app_number] => 09/314983
[patent_app_country] => US
[patent_app_date] => 1999-05-20
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 6
[patent_no_of_words] => 2205
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 90
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/376/06376285.pdf
[firstpage_image] =>[orig_patent_app_number] => 09314983
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/314983 | Annealed porous silicon with epitaxial layer for SOI | May 19, 1999 | Issued |
Array
(
[id] => 4404200
[patent_doc_number] => 06271047
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-07
[patent_title] => 'Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same'
[patent_app_type] => 1
[patent_app_number] => 9/316082
[patent_app_country] => US
[patent_app_date] => 1999-05-20
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
[patent_figures_cnt] => 21
[patent_no_of_words] => 17118
[patent_no_of_claims] => 15
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 139
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/271/06271047.pdf
[firstpage_image] =>[orig_patent_app_number] => 316082
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/316082 | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same | May 19, 1999 | Issued |
Array
(
[id] => 4259488
[patent_doc_number] => 06258711
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-07-10
[patent_title] => 'Sacrificial deposit to improve damascene pattern planarization in semiconductor wafers'
[patent_app_type] => 1
[patent_app_number] => 9/294406
[patent_app_country] => US
[patent_app_date] => 1999-04-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 9
[patent_no_of_words] => 3523
[patent_no_of_claims] => 24
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 102
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/258/06258711.pdf
[firstpage_image] =>[orig_patent_app_number] => 294406
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/294406 | Sacrificial deposit to improve damascene pattern planarization in semiconductor wafers | Apr 18, 1999 | Issued |
Array
(
[id] => 4354809
[patent_doc_number] => 06218317
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-04-17
[patent_title] => 'Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low K, dual damascene interconnect integration'
[patent_app_type] => 1
[patent_app_number] => 9/294914
[patent_app_country] => US
[patent_app_date] => 1999-04-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 4
[patent_no_of_words] => 1202
[patent_no_of_claims] => 18
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 68
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/218/06218317.pdf
[firstpage_image] =>[orig_patent_app_number] => 294914
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/294914 | Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low K, dual damascene interconnect integration | Apr 18, 1999 | Issued |
Array
(
[id] => 1549772
[patent_doc_number] => 06346470
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-02-12
[patent_title] => 'Method for reducing electromigration in semiconductor interconnect lines'
[patent_app_type] => B1
[patent_app_number] => 09/294454
[patent_app_country] => US
[patent_app_date] => 1999-04-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 5
[patent_no_of_words] => 1778
[patent_no_of_claims] => 16
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 69
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/346/06346470.pdf
[firstpage_image] =>[orig_patent_app_number] => 09294454
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/294454 | Method for reducing electromigration in semiconductor interconnect lines | Apr 18, 1999 | Issued |
Array
(
[id] => 1446638
[patent_doc_number] => 06368957
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-04-09
[patent_title] => 'Semiconductor device and method for manufacturing semiconductor device'
[patent_app_type] => B1
[patent_app_number] => 09/292666
[patent_app_country] => US
[patent_app_date] => 1999-04-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 15
[patent_no_of_words] => 5635
[patent_no_of_claims] => 12
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 101
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/368/06368957.pdf
[firstpage_image] =>[orig_patent_app_number] => 09292666
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/292666 | Semiconductor device and method for manufacturing semiconductor device | Apr 15, 1999 | Issued |
Array
(
[id] => 4271681
[patent_doc_number] => 06323129
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-11-27
[patent_title] => 'Process for maintaining a semiconductor substrate layer deposition equipment chamber in a preconditioned and low particulate state'
[patent_app_type] => 1
[patent_app_number] => 9/285635
[patent_app_country] => US
[patent_app_date] => 1999-04-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 1
[patent_no_of_words] => 3718
[patent_no_of_claims] => 14
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 201
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/323/06323129.pdf
[firstpage_image] =>[orig_patent_app_number] => 285635
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/285635 | Process for maintaining a semiconductor substrate layer deposition equipment chamber in a preconditioned and low particulate state | Apr 1, 1999 | Issued |
Array
(
[id] => 1585645
[patent_doc_number] => 06358847
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-03-19
[patent_title] => 'Method for enabling conventional wire bonding to copper-based bond pad features'
[patent_app_type] => B1
[patent_app_number] => 09/282596
[patent_app_country] => US
[patent_app_date] => 1999-03-31
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 11
[patent_no_of_words] => 6080
[patent_no_of_claims] => 33
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 30
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/358/06358847.pdf
[firstpage_image] =>[orig_patent_app_number] => 09282596
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/282596 | Method for enabling conventional wire bonding to copper-based bond pad features | Mar 30, 1999 | Issued |