
Renee R. Berry
Examiner (ID: 18563)
| Most Active Art Unit | 2818 |
| Art Unit(s) | 2829, 1762, 2891, 1109, 1104, 2813, 1792, 2818 |
| Total Applications | 592 |
| Issued Applications | 546 |
| Pending Applications | 22 |
| Abandoned Applications | 24 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4004702
[patent_doc_number] => 05960318
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[patent_kind] => NA
[patent_issue_date] => 1999-09-28
[patent_title] => 'Borderless contact etch process with sidewall spacer and selective isotropic etch process'
[patent_app_type] => 1
[patent_app_number] => 8/549884
[patent_app_country] => US
[patent_app_date] => 1995-10-27
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[pdf_file] => patents/05/960/05960318.pdf
[firstpage_image] =>[orig_patent_app_number] => 549884
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/549884 | Borderless contact etch process with sidewall spacer and selective isotropic etch process | Oct 26, 1995 | Issued |
Array
(
[id] => 3991476
[patent_doc_number] => 05891809
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[patent_kind] => NA
[patent_issue_date] => 1999-04-06
[patent_title] => 'Manufacturable dielectric formed using multiple oxidation and anneal steps'
[patent_app_type] => 1
[patent_app_number] => 8/536653
[patent_app_country] => US
[patent_app_date] => 1995-09-29
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/536653 | Manufacturable dielectric formed using multiple oxidation and anneal steps | Sep 28, 1995 | Issued |
| 08/535981 | SEMICONDUCTOR NANOPARTICLE COLLOIDS | Sep 28, 1995 | Abandoned |
Array
(
[id] => 3873329
[patent_doc_number] => 05824600
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[patent_kind] => NA
[patent_issue_date] => 1998-10-20
[patent_title] => 'Method for forming a silicide layer in a semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 8/524457
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[patent_app_date] => 1995-09-06
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/524457 | Method for forming a silicide layer in a semiconductor device | Sep 5, 1995 | Issued |
Array
(
[id] => 4222145
[patent_doc_number] => 06010937
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-01-04
[patent_title] => 'Reduction of dislocations in a heteroepitaxial semiconductor structure'
[patent_app_type] => 1
[patent_app_number] => 8/523694
[patent_app_country] => US
[patent_app_date] => 1995-09-05
[patent_effective_date] => 0000-00-00
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Array
(
[id] => 4155876
[patent_doc_number] => 06114256
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[patent_issue_date] => 2000-09-05
[patent_title] => 'Stable metallization for diamond and other materials'
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[patent_app_number] => 8/516494
[patent_app_country] => US
[patent_app_date] => 1995-08-18
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/516494 | Stable metallization for diamond and other materials | Aug 17, 1995 | Issued |
Array
(
[id] => 3786312
[patent_doc_number] => 05840628
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[patent_issue_date] => 1998-11-24
[patent_title] => 'Plasma CVD method for depositing tin layer'
[patent_app_type] => 1
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[patent_app_country] => US
[patent_app_date] => 1995-06-13
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[pdf_file] => patents/05/840/05840628.pdf
[firstpage_image] =>[orig_patent_app_number] => 489765
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/489765 | Plasma CVD method for depositing tin layer | Jun 12, 1995 | Issued |
Array
(
[id] => 3935479
[patent_doc_number] => 05972790
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[patent_kind] => NA
[patent_issue_date] => 1999-10-26
[patent_title] => 'Method for forming salicides'
[patent_app_type] => 1
[patent_app_number] => 8/489040
[patent_app_country] => US
[patent_app_date] => 1995-06-09
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/972/05972790.pdf
[firstpage_image] =>[orig_patent_app_number] => 489040
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/489040 | Method for forming salicides | Jun 8, 1995 | Issued |
Array
(
[id] => 4183827
[patent_doc_number] => 06159854
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[patent_kind] => NA
[patent_issue_date] => 2000-12-12
[patent_title] => 'Process of growing conductive layer from gas phase'
[patent_app_type] => 1
[patent_app_number] => 8/455520
[patent_app_country] => US
[patent_app_date] => 1995-05-31
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[pdf_file] => patents/06/159/06159854.pdf
[firstpage_image] =>[orig_patent_app_number] => 455520
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/455520 | Process of growing conductive layer from gas phase | May 30, 1995 | Issued |
Array
(
[id] => 3815605
[patent_doc_number] => 05770513
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-23
[patent_title] => 'Method for producing semiconductor device with heat dissipation structure'
[patent_app_type] => 1
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[firstpage_image] =>[orig_patent_app_number] => 433528
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/433528 | Method for producing semiconductor device with heat dissipation structure | May 1, 1995 | Issued |
Array
(
[id] => 3889466
[patent_doc_number] => 05834374
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[patent_kind] => NA
[patent_issue_date] => 1998-11-10
[patent_title] => 'Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates'
[patent_app_type] => 1
[patent_app_number] => 8/431791
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[patent_app_date] => 1995-05-01
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[pdf_file] => patents/05/834/05834374.pdf
[firstpage_image] =>[orig_patent_app_number] => 431791
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Array
(
[id] => 4204345
[patent_doc_number] => 06077718
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[firstpage_image] =>[orig_patent_app_number] => 407242
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/407242 | Method for forming deposited film | Mar 19, 1995 | Issued |
Array
(
[id] => 3730664
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[patent_issue_date] => 1997-09-09
[patent_title] => 'Method of aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control'
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Array
(
[id] => 3734446
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[patent_issue_date] => 1997-12-16
[patent_title] => 'Method for predicting process characteristics of polyurethane pads'
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Array
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Array
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