
Renzo Rocchegiani
Examiner (ID: 276)
| Most Active Art Unit | 2825 |
| Art Unit(s) | 2813, 2825 |
| Total Applications | 253 |
| Issued Applications | 222 |
| Pending Applications | 9 |
| Abandoned Applications | 22 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 6898626
[patent_doc_number] => 20010046791
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-11-29
[patent_title] => 'USE OF SILICON OXYNITRIDE ARC FOR METAL LAYERS'
[patent_app_type] => new
[patent_app_number] => 09/207562
[patent_app_country] => US
[patent_app_date] => 1998-12-08
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0046/20010046791.pdf
[firstpage_image] =>[orig_patent_app_number] => 09207562
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/207562 | Use of silicon oxynitride ARC for metal layers | Dec 7, 1998 | Issued |
Array
(
[id] => 4408336
[patent_doc_number] => 06309946
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-10-30
[patent_title] => 'Reduced RC delay between adjacent substrate wiring lines'
[patent_app_type] => 1
[patent_app_number] => 9/207890
[patent_app_country] => US
[patent_app_date] => 1998-12-08
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[pdf_file] => patents/06/309/06309946.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/207890 | Reduced RC delay between adjacent substrate wiring lines | Dec 7, 1998 | Issued |
Array
(
[id] => 4152776
[patent_doc_number] => 06124217
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[patent_kind] => NA
[patent_issue_date] => 2000-09-26
[patent_title] => 'In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects'
[patent_app_type] => 1
[patent_app_number] => 9/200016
[patent_app_country] => US
[patent_app_date] => 1998-11-25
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/200016 | In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects | Nov 24, 1998 | Issued |
Array
(
[id] => 4366699
[patent_doc_number] => 06274481
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[patent_kind] => NA
[patent_issue_date] => 2001-08-14
[patent_title] => 'Process sequence to improve DRAM data retention'
[patent_app_type] => 1
[patent_app_number] => 9/196911
[patent_app_country] => US
[patent_app_date] => 1998-11-20
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/196911 | Process sequence to improve DRAM data retention | Nov 19, 1998 | Issued |
Array
(
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[patent_doc_number] => 06232208
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[patent_issue_date] => 2001-05-15
[patent_title] => 'Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile'
[patent_app_type] => 1
[patent_app_number] => 9/187428
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[patent_app_date] => 1998-11-06
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/187428 | Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile | Nov 5, 1998 | Issued |
Array
(
[id] => 4233816
[patent_doc_number] => 06074914
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[patent_issue_date] => 2000-06-13
[patent_title] => 'Integration method for sidewall split gate flash transistor'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/182777 | Integration method for sidewall split gate flash transistor | Oct 29, 1998 | Issued |
Array
(
[id] => 4153653
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[patent_issue_date] => 2000-08-15
[patent_title] => 'Method and system for nondestructive layer defect detection'
[patent_app_type] => 1
[patent_app_number] => 9/178567
[patent_app_country] => US
[patent_app_date] => 1998-10-23
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[pdf_file] => patents/06/103/06103539.pdf
[firstpage_image] =>[orig_patent_app_number] => 178567
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/178567 | Method and system for nondestructive layer defect detection | Oct 22, 1998 | Issued |
Array
(
[id] => 7078615
[patent_doc_number] => 20010041461
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-11-15
[patent_title] => 'PROCESS FOR FORMING HIGH VOLTAGE JUNCTION TERMINATION EXTENSION OXIDE'
[patent_app_type] => new
[patent_app_number] => 09/167177
[patent_app_country] => US
[patent_app_date] => 1998-10-06
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0041/20010041461.pdf
[firstpage_image] =>[orig_patent_app_number] => 09167177
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/167177 | Process for forming high voltage junction termination extension oxide | Oct 5, 1998 | Issued |
Array
(
[id] => 4408759
[patent_doc_number] => 06265316
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[patent_issue_date] => 2001-07-24
[patent_title] => 'Etching method'
[patent_app_type] => 1
[patent_app_number] => 9/166426
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/166426 | Etching method | Oct 4, 1998 | Issued |
Array
(
[id] => 4329094
[patent_doc_number] => 06313002
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[patent_issue_date] => 2001-11-06
[patent_title] => 'Ion-implantation method applicable to manufacture of a TFT for use in a liquid crystal display apparatus'
[patent_app_type] => 1
[patent_app_number] => 9/160187
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[patent_app_date] => 1998-09-25
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[firstpage_image] =>[orig_patent_app_number] => 160187
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/160187 | Ion-implantation method applicable to manufacture of a TFT for use in a liquid crystal display apparatus | Sep 24, 1998 | Issued |
Array
(
[id] => 1474572
[patent_doc_number] => 06387777
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[patent_issue_date] => 2002-05-14
[patent_title] => 'Variable temperature LOCOS process'
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[patent_app_number] => 09/145107
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/145107 | Variable temperature LOCOS process | Sep 1, 1998 | Issued |
Array
(
[id] => 1310906
[patent_doc_number] => 06613681
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[patent_title] => 'Method of removing etch residues'
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[patent_app_number] => 09/141812
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/141812 | Method of removing etch residues | Aug 27, 1998 | Issued |
Array
(
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[patent_title] => 'Process for producing semiconductor device, apparatus for optimizing film thickness, and process for optimizing film thickness'
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Array
(
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[patent_title] => 'Vapor deposition routes to nanoporous silica'
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Array
(
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Array
(
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Array
(
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Array
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Array
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Array
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