
Scott R. Wilson
Examiner (ID: 11542, Phone: (571)272-1925 , Office: P/2826 )
| Most Active Art Unit | 2826 |
| Art Unit(s) | 2826 |
| Total Applications | 901 |
| Issued Applications | 779 |
| Pending Applications | 16 |
| Abandoned Applications | 106 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1089119
[patent_doc_number] => 06828200
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[patent_kind] => B2
[patent_issue_date] => 2004-12-07
[patent_title] => 'Multistage deposition that incorporates nitrogen via an intermediate step'
[patent_app_type] => B2
[patent_app_number] => 10/336441
[patent_app_country] => US
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[pdf_file] => patents/06/828/06828200.pdf
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Array
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[patent_title] => 'Method for fabricating semiconductor device'
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Array
(
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[patent_title] => 'Dry lithograpy method and method of forming gate pattern using the same'
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[patent_app_date] => 2002-12-27
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Array
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Array
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Array
(
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[patent_title] => 'High performance PD SOI tunneling-biased mosfet'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/316601 | High performance PD SOI tunneling-biased MOSFET | Dec 10, 2002 | Issued |
Array
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Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/313078 | Electronic array and methods for fabricating same | Dec 5, 2002 | Issued |
Array
(
[id] => 810558
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[patent_issue_date] => 2008-08-26
[patent_title] => 'Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging'
[patent_app_type] => utility
[patent_app_number] => 10/310532
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/310532 | Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging | Dec 4, 2002 | Issued |
Array
(
[id] => 6658103
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[patent_issue_date] => 2003-07-17
[patent_title] => 'Semiconductor wafer transport method and semiconductor wafer transport apparatus using the same'
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Array
(
[id] => 6657217
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[patent_title] => 'Method of reducing silicone oxynitride gate insulator thickness in some transistors of a hybrid integrated circuit to obtain increased differential in gate insulator thickness with other transistors of the hybrid circuit'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/304631 | METHOD OF REDUCING SILICON OXYNITRIDE GATE INSULATOR THICKNESS IN SOME TRANSISTORS OF A HYBRID INTEGRATED CIRCUIT TO OBTAIN INCREASED DIFFERENTIAL IN GATE INSULATOR THICKNESS WITH OTHER TRANSISTORS OF THE HYBRID CIRCUIT | Nov 25, 2002 | Issued |
Array
(
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Array
(
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Array
(
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Array
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Array
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Array
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