| Application number | Title of the application | Filing Date | Status |
|---|
Array
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[patent_issue_date] => 2001-02-27
[patent_title] => 'Semiconductor light-receiving device having sloped groove in light receiving surface'
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Array
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[patent_doc_number] => 06204520
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[patent_kind] => NA
[patent_issue_date] => 2001-03-20
[patent_title] => 'Thin film transistor, liquid crystal display and fabricating methods thereof'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/123831 | Thin film transistor, liquid crystal display and fabricating methods thereof | Jul 27, 1998 | Issued |
Array
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[patent_doc_number] => 06057564
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[patent_kind] => NA
[patent_issue_date] => 2000-05-02
[patent_title] => 'Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode'
[patent_app_type] => 1
[patent_app_number] => 9/119961
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Array
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[id] => 4105161
[patent_doc_number] => 06066881
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-05-23
[patent_title] => 'Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor'
[patent_app_type] => 1
[patent_app_number] => 9/119053
[patent_app_country] => US
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Array
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[id] => 4319430
[patent_doc_number] => 06242764
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-06-05
[patent_title] => 'III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers'
[patent_app_type] => 1
[patent_app_number] => 9/116912
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[patent_app_date] => 1998-07-17
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[firstpage_image] =>[orig_patent_app_number] => 116912
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/116912 | III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers | Jul 16, 1998 | Issued |
| 09/118487 | DyP AND DyAS RARE-EARTH/GROUP V ELECTRICAL CONTACTS FOR III-V SEMICONDUCTOR DEVICES | Jul 16, 1998 | Abandoned |
| 09/110973 | TRANSPARENT COATING MEMBER FOR LIGHT-EMITTING DIODES AND A FLUORESCENT COLOR LIGHT SOURCE | Jul 6, 1998 | Abandoned |
Array
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[id] => 4113071
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[patent_kind] => NA
[patent_issue_date] => 2000-05-02
[patent_title] => 'Light transparent superlattice window layer for light emitting diode'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/102823 | Light transparent superlattice window layer for light emitting diode | Jun 22, 1998 | Issued |
| 09/077723 | OPTICAL SEMICONDUCTOR MODULE | Jun 4, 1998 | Abandoned |
Array
(
[id] => 4243534
[patent_doc_number] => 06091083
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-07-18
[patent_title] => 'Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface'
[patent_app_type] => 1
[patent_app_number] => 9/088222
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[patent_app_date] => 1998-06-01
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[firstpage_image] =>[orig_patent_app_number] => 088222
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/088222 | Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface | May 31, 1998 | Issued |
| 09/086672 | TWO-DIMENSIONALLY ARRAYED QUANTUM DEVICE | May 28, 1998 | Abandoned |
Array
(
[id] => 4015864
[patent_doc_number] => 06005692
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[patent_kind] => NA
[patent_issue_date] => 1999-12-21
[patent_title] => 'Light-emitting diode constructions'
[patent_app_type] => 1
[patent_app_number] => 9/087003
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Array
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[patent_issue_date] => 2000-05-09
[patent_title] => 'Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same'
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Array
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[patent_title] => 'Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same'
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Array
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[patent_issue_date] => 2000-12-19
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Array
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Array
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Array
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[patent_title] => 'Semiconductor device with an insulation film having emitter contact windows filled with polysilicon film'
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Array
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Array
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[patent_title] => 'Nanowire arrays'
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