Susan Dadio
Examiner (ID: 11306)
Most Active Art Unit | 1808 |
Art Unit(s) | 1808, 1651 |
Total Applications | 189 |
Issued Applications | 98 |
Pending Applications | 19 |
Abandoned Applications | 72 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 6986871
[patent_doc_number] => 20010036703
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[patent_kind] => A1
[patent_issue_date] => 2001-11-01
[patent_title] => 'Method of manufacturing capacitor of semiconductor device'
[patent_app_type] => new
[patent_app_number] => 09/745426
[patent_app_country] => US
[patent_app_date] => 2000-12-26
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[pdf_file] => publications/A1/0036/20010036703.pdf
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Array
(
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[patent_issue_date] => 2001-07-05
[patent_title] => 'Method for manufacturing a semiconductor memory device using hemispherical grain silicon'
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Array
(
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[patent_issue_date] => 2003-02-20
[patent_title] => 'Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory.'
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[patent_app_number] => 09/737363
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Array
(
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[patent_doc_number] => 06483131
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[patent_issue_date] => 2002-11-19
[patent_title] => 'High density and high speed cell array architecture'
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[patent_app_number] => 09/738015
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[patent_app_date] => 2000-12-14
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Array
(
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[patent_title] => 'Method for probing a semiconductor wafer'
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Array
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[patent_title] => 'Memory cell structure integrated on semiconductor'
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Array
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/722505 | Method of forming a storage node in a semiconductor device | Nov 27, 2000 | Issued |
Array
(
[id] => 1446553
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[patent_issue_date] => 2002-04-09
[patent_title] => 'Method of fabricating ruthenium-based contact plug for memory devices'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/721796 | Method of fabricating ruthenium-based contact plug for memory devices | Nov 23, 2000 | Issued |
Array
(
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[patent_issue_date] => 2002-03-19
[patent_title] => 'Method for increasing the capacitance of a semiconductor capacitors'
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Array
(
[id] => 1416072
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[patent_issue_date] => 2003-01-21
[patent_title] => 'Method of forming a metal-to-metal antifuse with non-conductive diffusion barrier'
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Array
(
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Array
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Array
(
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Array
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Array
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Array
(
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Array
(
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Array
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Array
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