
Thinh T. Nguyen
Examiner (ID: 17352, Phone: (571)272-1790 , Office: P/2897 )
| Most Active Art Unit | 2897 |
| Art Unit(s) | 2897, 2818 |
| Total Applications | 2487 |
| Issued Applications | 2130 |
| Pending Applications | 85 |
| Abandoned Applications | 277 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 9850100
[patent_doc_number] => 08951828
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2015-02-10
[patent_title] => 'Thin-film electro devices based on derivatized poly(benao-isimidazobenzophenanthroline) ladder polymers'
[patent_app_type] => utility
[patent_app_number] => 13/667063
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[rel_patent_id] =>[rel_patent_doc_number] =>) 13/667063 | Thin-film electro devices based on derivatized poly(benao-isimidazobenzophenanthroline) ladder polymers | Nov 1, 2012 | Issued |
Array
(
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[patent_doc_number] => 20130056707
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[patent_issue_date] => 2013-03-07
[patent_title] => 'NITRIDE SEMICONDUCTOR DEVICE'
[patent_app_type] => utility
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[patent_app_date] => 2012-10-24
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Array
(
[id] => 8694859
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[patent_title] => 'ROUTING UNDER BOND PAD FOR THE REPLACEMENT OF AN INTERCONNECT LAYER'
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[patent_app_number] => 13/656092
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[patent_app_date] => 2012-10-19
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Array
(
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[patent_title] => 'Method For Radiation Monitoring'
[patent_app_type] => utility
[patent_app_number] => 13/647547
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Array
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Array
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[patent_issue_date] => 2015-12-22
[patent_title] => 'Semiconductor structure with integrated passive structures'
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Array
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[patent_title] => 'Tunable Hot-Electron Transfer Within a Nanostructure'
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Array
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[patent_title] => 'Semiconductor device and method of manufacturing semiconductor device'
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Array
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[patent_title] => 'Flexible, space-efficient I/O circuitry for integrated circuits'
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Array
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[patent_doc_number] => 08772865
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[patent_title] => 'MOS transistor structure'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 13/627912 | MOS transistor structure | Sep 25, 2012 | Issued |
Array
(
[id] => 9380917
[patent_doc_number] => 20140084398
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[patent_issue_date] => 2014-03-27
[patent_title] => 'PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER'
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[patent_app_number] => 13/627968
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[rel_patent_id] =>[rel_patent_doc_number] =>) 13/627968 | Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer | Sep 25, 2012 | Issued |
Array
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[patent_title] => 'Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same'
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Array
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Array
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