| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3649390
[patent_doc_number] => 05605858
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-02-25
[patent_title] => 'Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes'
[patent_app_type] => 1
[patent_app_number] => 8/483804
[patent_app_country] => US
[patent_app_date] => 1995-06-07
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Array
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[id] => 3665695
[patent_doc_number] => 05599745
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-02-04
[patent_title] => 'Method to provide a void between adjacent conducting lines in a semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 8/481051
[patent_app_country] => US
[patent_app_date] => 1995-06-07
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[firstpage_image] =>[orig_patent_app_number] => 481051
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/481051 | Method to provide a void between adjacent conducting lines in a semiconductor device | Jun 6, 1995 | Issued |
Array
(
[id] => 3583256
[patent_doc_number] => 05567209
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-10-22
[patent_title] => 'Method of manufacturing solid electrolytic capacitor'
[patent_app_type] => 1
[patent_app_number] => 8/487633
[patent_app_country] => US
[patent_app_date] => 1995-06-07
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[firstpage_image] =>[orig_patent_app_number] => 487633
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/487633 | Method of manufacturing solid electrolytic capacitor | Jun 6, 1995 | Issued |
Array
(
[id] => 3694915
[patent_doc_number] => 05661087
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-08-26
[patent_title] => 'Vertical interconnect process for silicon segments'
[patent_app_type] => 1
[patent_app_number] => 8/476623
[patent_app_country] => US
[patent_app_date] => 1995-06-07
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 476623
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/476623 | Vertical interconnect process for silicon segments | Jun 6, 1995 | Issued |
| 08/485809 | CONDUCTIVE VIA STRUCTURE FOR INTEGRATED CIRCUITS AND METHOD FOR MAKING SAME | Jun 6, 1995 | Abandoned |
Array
(
[id] => 3608046
[patent_doc_number] => 05589417
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[patent_kind] => NA
[patent_issue_date] => 1996-12-31
[patent_title] => 'TiSi.sub.2 /TiN clad interconnect technology'
[patent_app_type] => 1
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[firstpage_image] =>[orig_patent_app_number] => 481665
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/481665 | TiSi.sub.2 /TiN clad interconnect technology | Jun 6, 1995 | Issued |
Array
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[id] => 3730937
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[patent_kind] => NA
[patent_issue_date] => 1997-09-09
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Array
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[patent_doc_number] => 05705429
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[patent_kind] => NA
[patent_issue_date] => 1998-01-06
[patent_title] => 'Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius'
[patent_app_type] => 1
[patent_app_number] => 8/467846
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[patent_app_date] => 1995-06-06
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[firstpage_image] =>[orig_patent_app_number] => 467846
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/467846 | Method of manufacturing aluminum wiring at a substrate temperature from 100 to 150 degrees celsius | Jun 5, 1995 | Issued |
Array
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[id] => 3700267
[patent_doc_number] => 05646067
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-07-08
[patent_title] => 'Method of bonding wafers having vias including conductive material'
[patent_app_type] => 1
[patent_app_number] => 8/461951
[patent_app_country] => US
[patent_app_date] => 1995-06-05
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[pdf_file] => patents/05/646/05646067.pdf
[firstpage_image] =>[orig_patent_app_number] => 461951
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/461951 | Method of bonding wafers having vias including conductive material | Jun 4, 1995 | Issued |
Array
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[id] => 3807747
[patent_doc_number] => 05811316
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-09-22
[patent_title] => 'Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring'
[patent_app_type] => 1
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[firstpage_image] =>[orig_patent_app_number] => 460931
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/460931 | Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring | Jun 4, 1995 | Issued |
Array
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[id] => 3694727
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[patent_kind] => NA
[patent_issue_date] => 1997-04-08
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[firstpage_image] =>[orig_patent_app_number] => 462171
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/462171 | Method of fabrication of surface mountable integrated circuits | Jun 4, 1995 | Issued |
Array
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[id] => 3506188
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[patent_kind] => NA
[patent_issue_date] => 1996-10-29
[patent_title] => 'Method for shallow junction formation'
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[firstpage_image] =>[orig_patent_app_number] => 464021
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/464021 | Method for shallow junction formation | Jun 4, 1995 | Issued |
Array
(
[id] => 3621499
[patent_doc_number] => 05593924
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-01-14
[patent_title] => 'Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micron silicon and polysilicon lines'
[patent_app_type] => 1
[patent_app_number] => 8/460345
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| 08/458861 | USE OF A PLASMA SOURCE TO FORM A LAYER DURING THE FORMATION OF A SEMICONDUCTOR DEVICE | Jun 1, 1995 | Abandoned |
Array
(
[id] => 3612904
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[firstpage_image] =>[orig_patent_app_number] => 457191
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/457191 | Method of making area direct transfer multilayer thin film structure | May 31, 1995 | Issued |
Array
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[patent_kind] => NA
[patent_issue_date] => 1998-03-31
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Array
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[id] => 3549819
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[patent_kind] => NA
[patent_issue_date] => 1996-08-20
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Array
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Array
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