| Application number | Title of the application | Filing Date | Status |
|---|
| 07/961433 | ELECTRICAL ISOLATION IN INTEGRATED CIRCUITS | Oct 14, 1992 | Abandoned |
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[patent_doc_number] => 05332916
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[patent_kind] => NA
[patent_issue_date] => 1994-07-26
[patent_title] => 'Transmission gate'
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[patent_app_number] => 7/951852
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| 07/950264 | ANTIFUSE ELEMENT AND FABRICATION METHOD | Sep 22, 1992 | Abandoned |
| 07/947072 | STATIC DISCHARGE CIRCUIT HAVING LOW BREAKDOWN VOLTAGE BIPOLAR CLAMP | Sep 16, 1992 | Abandoned |
Array
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[patent_kind] => NA
[patent_issue_date] => 1993-11-02
[patent_title] => 'Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure'
[patent_app_type] => 1
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Array
(
[id] => 2989502
[patent_doc_number] => 05250837
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-10-05
[patent_title] => 'Method for dielectrically isolating integrated circuits using doped oxide sidewalls'
[patent_app_type] => 1
[patent_app_number] => 7/936720
[patent_app_country] => US
[patent_app_date] => 1992-08-31
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| 90/002818 | HIGH POWER MOSFET WITH LOW ON-RESISTANCE AND HIGH BREAKDOWN VOLTAGE | Aug 23, 1992 | Issued |
| 07/932763 | ISOTOPICALLY ENRICHED SEMICONDUCTOR DEVICES | Aug 19, 1992 | Abandoned |
| 07/928018 | SEMICONDUCTOR WAFER AND PROCESSING APPARATUS THEREFOR | Aug 10, 1992 | Abandoned |
Array
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[patent_app_type] => 1
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Array
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[id] => 3101267
[patent_doc_number] => 05319238
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[patent_kind] => NA
[patent_issue_date] => 1994-06-07
[patent_title] => 'Programmable interconnect structures and programmable integrated circuits'
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Array
(
[id] => 3106314
[patent_doc_number] => 05448100
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-09-05
[patent_title] => 'Breakdown diode structure'
[patent_app_type] => 1
[patent_app_number] => 7/919001
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[patent_app_date] => 1992-07-23
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| 07/907024 | INDUCTANCE ELEMENT | Jun 30, 1992 | Abandoned |
| 07/907422 | SEMICONDUCTOR DEVICE | Jun 30, 1992 | Abandoned |
| 07/905123 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A WIRING LAYER OVERLYING SUBSTANTIALLY THE ENTIRE AREA OF THE SEMICONDUCTOR REGION | Jun 23, 1992 | Abandoned |
