
Tien Quang Dinh
Supervisory Patent Examiner (ID: 8179, Phone: (571)272-6899 , Office: P/3647 )
| Most Active Art Unit | |
| Art Unit(s) | |
| Total Applications | |
| Issued Applications | |
| Pending Applications | |
| Abandoned Applications |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
| 07/441951 | SUPERCONDUCTING DEVICE | Nov 26, 1989 | Abandoned |
| 07/440427 | Nonvolatile semiconductor memory device | Nov 20, 1989 | Issued |
| 07/428673 | Package for superconducting devices | Oct 29, 1989 | Issued |
| 07/428423 | HETEROSTRUCTURE FIELD EFFECT TRANSISTOR | Oct 29, 1989 | Abandoned |
| 07/426237 | Field-effect transistor | Oct 24, 1989 | Issued |
| 07/421761 | Overcurrent preventive diode | Oct 15, 1989 | Issued |
| 07/419007 | Resin molded type semiconductor device having a conductor film | Oct 9, 1989 | Issued |
| 07/417286 | Method for arranging EEPROM cells and a semiconductor device manufactured by the method | Oct 4, 1989 | Issued |
| 07/418894 | EPROM IC having reduced impurity regions | Oct 3, 1989 | Issued |
| 07/415708 | Heterojunction bipolar transistor | Sep 28, 1989 | Issued |
| 07/415445 | LASER PROGRAMMING OF SEMICONDUCTOR DEVICES USING DIODE MAKE-LINK STRUCTURE | Sep 27, 1989 | Issued |
| 07/413749 | SEMICONDUCTOR DEVICE HAVING A BUILT-IN CAPACITOR AND MANUFACTURING METHOD THEREOF | Sep 27, 1989 | Abandoned |
| 07/412201 | Superconducting device | Sep 24, 1989 | Issued |
| 07/408979 | INSULATOR STRUCTURE FOR AMORPHOUS SILICON THIN-FILM TRANSISTORS | Sep 17, 1989 | Abandoned |
| 07/407729 | BREAKDOWN DIODE STRUCTURE | Sep 13, 1989 | Abandoned |
| 07/406061 | Bi-based oxide superconducting tunnel junctions and manufacturing method for the same | Sep 11, 1989 | Issued |
| 07/404618 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATION THEREOF | Sep 7, 1989 | Abandoned |
| 07/404996 | PROGRAMMABLE INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATION THEREOF | Sep 6, 1989 | Abandoned |
| 07/399832 | High efficiency lamp or light accepter | Aug 28, 1989 | Issued |
| 07/397523 | SEMICONDUCTOR ELEMENT HAVING A RESISTANCE-STATE TRANSITION REGION OF TWO-LAYER STRUCTURE | Aug 22, 1989 | Abandoned |