| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 2274204
[patent_doc_number] => 04566020
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-01-21
[patent_title] => 'Hot-electron and hot-hole transistors having silicide contacts'
[patent_app_type] => 1
[patent_app_number] => 6/481517
[patent_app_country] => US
[patent_app_date] => 1983-04-01
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[pdf_file] => patents/04/566/04566020.pdf
[firstpage_image] =>[orig_patent_app_number] => 481517
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/481517 | Hot-electron and hot-hole transistors having silicide contacts | Mar 31, 1983 | Issued |
Array
(
[id] => 2307736
[patent_doc_number] => 04642666
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1987-02-10
[patent_title] => 'High power MOSFET with low on-resistance and high breakdown voltage'
[patent_app_type] => 1
[patent_app_number] => 6/471818
[patent_app_country] => US
[patent_app_date] => 1983-03-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/04/642/04642666.pdf
[firstpage_image] =>[orig_patent_app_number] => 471818
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/471818 | High power MOSFET with low on-resistance and high breakdown voltage | Mar 2, 1983 | Issued |
| 06/468208 | SEMICONDUCTOR DEVICE | Feb 21, 1983 | Abandoned |
Array
(
[id] => 2225504
[patent_doc_number] => 04628340
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-12-09
[patent_title] => 'CMOS RAM with no latch-up phenomenon'
[patent_app_type] => 1
[patent_app_number] => 6/468209
[patent_app_country] => US
[patent_app_date] => 1983-02-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[patent_no_of_words] => 1892
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[pdf_file] => patents/04/628/04628340.pdf
[firstpage_image] =>[orig_patent_app_number] => 468209
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/468209 | CMOS RAM with no latch-up phenomenon | Feb 21, 1983 | Issued |
| 06/467296 | FUSE ELEMENT FOR INTEGRATED MEMORY DEVICE | Feb 16, 1983 | Abandoned |
Array
(
[id] => 2280359
[patent_doc_number] => 04581627
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-04-08
[patent_title] => 'Enhanced silicide adhesion to semiconductor and insulator surfaces'
[patent_app_type] => 1
[patent_app_number] => 6/459187
[patent_app_country] => US
[patent_app_date] => 1983-01-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/581/04581627.pdf
[firstpage_image] =>[orig_patent_app_number] => 459187
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/459187 | Enhanced silicide adhesion to semiconductor and insulator surfaces | Jan 18, 1983 | Issued |
| 06/450744 | SEMI-CONDUCTOR I. C. ELEMENT | Dec 16, 1982 | Abandoned |
Array
(
[id] => 2564345
[patent_doc_number] => 04816879
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1989-03-28
[patent_title] => 'Schottky-type rectifier having controllable barrier height'
[patent_app_type] => 1
[patent_app_number] => 6/447745
[patent_app_country] => US
[patent_app_date] => 1982-12-08
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/816/04816879.pdf
[firstpage_image] =>[orig_patent_app_number] => 447745
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/447745 | Schottky-type rectifier having controllable barrier height | Dec 7, 1982 | Issued |
| 06/447845 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A SEMICONDUCTOR DEVICE | Dec 7, 1982 | Abandoned |
Array
(
[id] => 2193304
[patent_doc_number] => 04546375
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1985-10-08
[patent_title] => 'Vertical IGFET with internal gate and method for making same'
[patent_app_type] => 1
[patent_app_number] => 6/439563
[patent_app_country] => US
[patent_app_date] => 1982-11-05
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[pdf_file] => patents/04/546/04546375.pdf
[firstpage_image] =>[orig_patent_app_number] => 439563
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/439563 | Vertical IGFET with internal gate and method for making same | Nov 4, 1982 | Issued |
Array
(
[id] => 2163141
[patent_doc_number] => 04554569
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1985-11-19
[patent_title] => 'Integrated electron circuits having Schottky field effect transistors of P- and N-type'
[patent_app_type] => 1
[patent_app_number] => 6/441530
[patent_app_country] => US
[patent_app_date] => 1982-11-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 9
[patent_no_of_words] => 1748
[patent_no_of_claims] => 18
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/554/04554569.pdf
[firstpage_image] =>[orig_patent_app_number] => 441530
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/441530 | Integrated electron circuits having Schottky field effect transistors of P- and N-type | Nov 2, 1982 | Issued |
Array
(
[id] => 2359659
[patent_doc_number] => 04651186
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1987-03-17
[patent_title] => 'Field effect transistor with improved withstand voltage characteristic'
[patent_app_type] => 1
[patent_app_number] => 6/438336
[patent_app_country] => US
[patent_app_date] => 1982-11-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 13
[patent_no_of_words] => 4823
[patent_no_of_claims] => 22
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[pdf_file] => patents/04/651/04651186.pdf
[firstpage_image] =>[orig_patent_app_number] => 438336
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/438336 | Field effect transistor with improved withstand voltage characteristic | Oct 31, 1982 | Issued |
| 06/437357 | POWER MOS FET | Oct 27, 1982 | Abandoned |
Array
(
[id] => 2499612
[patent_doc_number] => 04825281
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1989-04-25
[patent_title] => 'Bipolar transistor with sidewall bare contact structure'
[patent_app_type] => 1
[patent_app_number] => 6/435552
[patent_app_country] => US
[patent_app_date] => 1982-10-21
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/825/04825281.pdf
[firstpage_image] =>[orig_patent_app_number] => 435552
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/435552 | Bipolar transistor with sidewall bare contact structure | Oct 20, 1982 | Issued |
Array
(
[id] => 2131334
[patent_doc_number] => 04490733
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1984-12-25
[patent_title] => 'Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit'
[patent_app_type] => 1
[patent_app_number] => 6/434791
[patent_app_country] => US
[patent_app_date] => 1982-10-15
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
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[pdf_file] => patents/04/490/04490733.pdf
[firstpage_image] =>[orig_patent_app_number] => 434791
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/434791 | Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit | Oct 14, 1982 | Issued |
Array
(
[id] => 2249727
[patent_doc_number] => 04633282
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-12-30
[patent_title] => 'Metal-semiconductor field-effect transistor with a partial p-type drain'
[patent_app_type] => 1
[patent_app_number] => 6/432463
[patent_app_country] => US
[patent_app_date] => 1982-10-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/04/633/04633282.pdf
[firstpage_image] =>[orig_patent_app_number] => 432463
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/432463 | Metal-semiconductor field-effect transistor with a partial p-type drain | Oct 3, 1982 | Issued |
| 06/430991 | MIS INTEGRATED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | Sep 29, 1982 | Abandoned |
| 06/429435 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | Sep 29, 1982 | Abandoned |
Array
(
[id] => 3068620
[patent_doc_number] => 05311052
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-05-10
[patent_title] => 'Planar semiconductor component with stepped channel stopper electrode'
[patent_app_type] => 1
[patent_app_number] => 6/426783
[patent_app_country] => US
[patent_app_date] => 1982-09-29
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/311/05311052.pdf
[firstpage_image] =>[orig_patent_app_number] => 426783
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/426783 | Planar semiconductor component with stepped channel stopper electrode | Sep 28, 1982 | Issued |
| 06/419293 | BALLISTIC HETEROJUNCTION BIPOLAR TRANSISTOR | Sep 16, 1982 | Abandoned |