Search

Victor R Kostak

Examiner (ID: 1879)

Most Active Art Unit
2602
Art Unit(s)
2622, 2602, 2611, 2422, 2614, 2711, 2899
Total Applications
3434
Issued Applications
2947
Pending Applications
96
Abandoned Applications
357

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 6159364 [patent_doc_number] => 20110192342 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-08-11 [patent_title] => 'Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method' [patent_app_type] => utility [patent_app_number] => 13/017364 [patent_app_country] => US [patent_app_date] => 2011-01-31 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 1 [patent_no_of_words] => 2576 [patent_no_of_claims] => 5 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0192/20110192342.pdf [firstpage_image] =>[orig_patent_app_number] => 13017364 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/017364
Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method Jan 30, 2011 Abandoned
Array ( [id] => 6041438 [patent_doc_number] => 20110203515 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-08-25 [patent_title] => 'Device for crystal growth at intermediate temperatures using controlled semi-active cooling' [patent_app_type] => utility [patent_app_number] => 12/931288 [patent_app_country] => US [patent_app_date] => 2011-01-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 29 [patent_figures_cnt] => 29 [patent_no_of_words] => 16030 [patent_no_of_claims] => 95 [patent_no_of_ind_claims] => 5 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0203/20110203515.pdf [firstpage_image] =>[orig_patent_app_number] => 12931288 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/931288
Device for crystal growth at intermediate temperatures using controlled semi-active cooling Jan 28, 2011 Abandoned
Array ( [id] => 5954547 [patent_doc_number] => 20110180229 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-07-28 [patent_title] => 'Crucible For Use In A Directional Solidification Furnace' [patent_app_type] => utility [patent_app_number] => 13/014932 [patent_app_country] => US [patent_app_date] => 2011-01-27 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 9 [patent_figures_cnt] => 9 [patent_no_of_words] => 4520 [patent_no_of_claims] => 20 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0180/20110180229.pdf [firstpage_image] =>[orig_patent_app_number] => 13014932 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/014932
Crucible For Use In A Directional Solidification Furnace Jan 26, 2011 Abandoned
Array ( [id] => 6111748 [patent_doc_number] => 20110189842 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-08-04 [patent_title] => 'Method For Producing A Semiconductor Wafer Composed Of Silicon With An Epitaxially Deposited Layer' [patent_app_type] => utility [patent_app_number] => 13/014796 [patent_app_country] => US [patent_app_date] => 2011-01-27 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 4 [patent_no_of_words] => 3139 [patent_no_of_claims] => 6 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0189/20110189842.pdf [firstpage_image] =>[orig_patent_app_number] => 13014796 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/014796
Method for producing a semiconductor wafer composed of silicon with an epitaxially deposited layer Jan 26, 2011 Issued
Array ( [id] => 9482292 [patent_doc_number] => 08728236 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2014-05-20 [patent_title] => 'Low dislocation density III-V nitride substrate including filled pits and process for making the same' [patent_app_type] => utility [patent_app_number] => 13/008008 [patent_app_country] => US [patent_app_date] => 2011-01-17 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 13 [patent_figures_cnt] => 14 [patent_no_of_words] => 11380 [patent_no_of_claims] => 34 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 134 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13008008 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/008008
Low dislocation density III-V nitride substrate including filled pits and process for making the same Jan 16, 2011 Issued
Array ( [id] => 9103566 [patent_doc_number] => 20130276697 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2013-10-24 [patent_title] => 'METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE' [patent_app_type] => utility [patent_app_number] => 13/996221 [patent_app_country] => US [patent_app_date] => 2011-01-07 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 3 [patent_figures_cnt] => 3 [patent_no_of_words] => 5500 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 4 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13996221 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/996221
METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE Jan 6, 2011 Abandoned
Array ( [id] => 5978515 [patent_doc_number] => 20110094668 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-04-28 [patent_title] => 'SUBSTRATE WITH DETERMINATE THERMAL EXPANSION COEFFICIENT' [patent_app_type] => utility [patent_app_number] => 12/983543 [patent_app_country] => US [patent_app_date] => 2011-01-03 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 4 [patent_no_of_words] => 6378 [patent_no_of_claims] => 20 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0094/20110094668.pdf [firstpage_image] =>[orig_patent_app_number] => 12983543 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/983543
SUBSTRATE WITH DETERMINATE THERMAL EXPANSION COEFFICIENT Jan 2, 2011 Abandoned
Array ( [id] => 8498623 [patent_doc_number] => 20120298031 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2012-11-29 [patent_title] => 'DEVICE FOR SINGLE-CRYSTAL GROWTH AND METHOD OF SINGLE-CRYSTAL GROWTH' [patent_app_type] => utility [patent_app_number] => 13/521524 [patent_app_country] => US [patent_app_date] => 2010-12-28 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 14 [patent_figures_cnt] => 14 [patent_no_of_words] => 9199 [patent_no_of_claims] => 13 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13521524 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/521524
DEVICE FOR SINGLE-CRYSTAL GROWTH AND METHOD OF SINGLE-CRYSTAL GROWTH Dec 27, 2010 Abandoned
Array ( [id] => 9988911 [patent_doc_number] => 09034104 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2015-05-19 [patent_title] => 'Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers' [patent_app_type] => utility [patent_app_number] => 12/968367 [patent_app_country] => US [patent_app_date] => 2010-12-15 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 24 [patent_figures_cnt] => 58 [patent_no_of_words] => 24731 [patent_no_of_claims] => 46 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 114 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 12968367 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/968367
Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers Dec 14, 2010 Issued
Array ( [id] => 9970476 [patent_doc_number] => 09017478 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2015-04-28 [patent_title] => 'Apparatus and method for extracting a silicon ingot made by an electromagnetic continuous casting method' [patent_app_type] => utility [patent_app_number] => 13/510895 [patent_app_country] => US [patent_app_date] => 2010-12-14 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 9 [patent_figures_cnt] => 10 [patent_no_of_words] => 3241 [patent_no_of_claims] => 13 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 106 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13510895 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/510895
Apparatus and method for extracting a silicon ingot made by an electromagnetic continuous casting method Dec 13, 2010 Issued
Array ( [id] => 7656914 [patent_doc_number] => 20110306183 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-12-15 [patent_title] => 'APPARATUS AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM' [patent_app_type] => utility [patent_app_number] => 12/962990 [patent_app_country] => US [patent_app_date] => 2010-12-08 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 5 [patent_no_of_words] => 2671 [patent_no_of_claims] => 17 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0306/20110306183.pdf [firstpage_image] =>[orig_patent_app_number] => 12962990 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/962990
Method for manufacturing a polycrystalline silicon thin film by joule-heating induced crystallization Dec 7, 2010 Issued
Array ( [id] => 6150853 [patent_doc_number] => 20110155051 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-06-30 [patent_title] => 'MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL' [patent_app_type] => utility [patent_app_number] => 12/956327 [patent_app_country] => US [patent_app_date] => 2010-11-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 7 [patent_figures_cnt] => 7 [patent_no_of_words] => 6513 [patent_no_of_claims] => 12 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0155/20110155051.pdf [firstpage_image] =>[orig_patent_app_number] => 12956327 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/956327
MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL Nov 29, 2010 Abandoned
Array ( [id] => 9374992 [patent_doc_number] => 08679248 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2014-03-25 [patent_title] => 'GaN whiskers and methods of growing them from solution' [patent_app_type] => utility [patent_app_number] => 12/952225 [patent_app_country] => US [patent_app_date] => 2010-11-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 10 [patent_no_of_words] => 4741 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 302 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 12952225 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/952225
GaN whiskers and methods of growing them from solution Nov 22, 2010 Issued
Array ( [id] => 8193117 [patent_doc_number] => 20120119407 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2012-05-17 [patent_title] => 'APPARATUS AND METHOD FOR DIRECTIONAL SOLIDIFICATION OF SILICON' [patent_app_type] => utility [patent_app_number] => 12/947936 [patent_app_country] => US [patent_app_date] => 2010-11-17 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 7 [patent_figures_cnt] => 7 [patent_no_of_words] => 15045 [patent_no_of_claims] => 22 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0119/20120119407.pdf [firstpage_image] =>[orig_patent_app_number] => 12947936 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/947936
Apparatus for directional solidification of silicon including a refractory material Nov 16, 2010 Issued
Array ( [id] => 6001322 [patent_doc_number] => 20110117376 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-05-19 [patent_title] => 'Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy' [patent_app_type] => utility [patent_app_number] => 12/947409 [patent_app_country] => US [patent_app_date] => 2010-11-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 5 [patent_no_of_words] => 2067 [patent_no_of_claims] => 11 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0117/20110117376.pdf [firstpage_image] =>[orig_patent_app_number] => 12947409 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/947409
Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy Nov 15, 2010 Abandoned
Array ( [id] => 11415472 [patent_doc_number] => 09562289 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2017-02-07 [patent_title] => 'Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod' [patent_app_type] => utility [patent_app_number] => 13/508826 [patent_app_country] => US [patent_app_date] => 2010-10-22 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 4 [patent_no_of_words] => 4111 [patent_no_of_claims] => 6 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 181 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13508826 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/508826
Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod Oct 21, 2010 Issued
Array ( [id] => 5954224 [patent_doc_number] => 20110179992 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-07-28 [patent_title] => 'CRYSTAL GROWTH METHODS AND SYSTEMS' [patent_app_type] => utility [patent_app_number] => 12/909471 [patent_app_country] => US [patent_app_date] => 2010-10-21 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 18 [patent_figures_cnt] => 18 [patent_no_of_words] => 13739 [patent_no_of_claims] => 50 [patent_no_of_ind_claims] => 6 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0179/20110179992.pdf [firstpage_image] =>[orig_patent_app_number] => 12909471 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/909471
CRYSTAL GROWTH METHODS AND SYSTEMS Oct 20, 2010 Abandoned
Array ( [id] => 10567703 [patent_doc_number] => 09290861 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2016-03-22 [patent_title] => 'Group 13 nitride crystal with stepped surface' [patent_app_type] => utility [patent_app_number] => 13/496982 [patent_app_country] => US [patent_app_date] => 2010-10-15 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 26 [patent_figures_cnt] => 26 [patent_no_of_words] => 8969 [patent_no_of_claims] => 4 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 142 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13496982 [rel_patent_id] =>[rel_patent_doc_number] =>)
13/496982
Group 13 nitride crystal with stepped surface Oct 14, 2010 Issued
Array ( [id] => 12946444 [patent_doc_number] => 09834860 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2017-12-05 [patent_title] => Method of high growth rate deposition for group III/V materials [patent_app_type] => utility [patent_app_number] => 12/904090 [patent_app_country] => US [patent_app_date] => 2010-10-13 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 1 [patent_no_of_words] => 4607 [patent_no_of_claims] => 15 [patent_no_of_ind_claims] => 4 [patent_words_short_claim] => 275 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 12904090 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/904090
Method of high growth rate deposition for group III/V materials Oct 12, 2010 Issued
Array ( [id] => 6126084 [patent_doc_number] => 20110086213 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2011-04-14 [patent_title] => 'METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE' [patent_app_type] => utility [patent_app_number] => 12/902704 [patent_app_country] => US [patent_app_date] => 2010-10-12 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 3 [patent_figures_cnt] => 3 [patent_no_of_words] => 5106 [patent_no_of_claims] => 21 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 0 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] => publications/A1/0086/20110086213.pdf [firstpage_image] =>[orig_patent_app_number] => 12902704 [rel_patent_id] =>[rel_patent_doc_number] =>)
12/902704
METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE Oct 11, 2010 Abandoned
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