Victor R Kostak
Examiner (ID: 1879)
Most Active Art Unit | 2602 |
Art Unit(s) | 2622, 2602, 2611, 2422, 2614, 2711, 2899 |
Total Applications | 3434 |
Issued Applications | 2947 |
Pending Applications | 96 |
Abandoned Applications | 357 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 8441669
[patent_doc_number] => 20120258286
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2012-10-11
[patent_title] => 'Template for Epitaxial Growth and Process for Producing Same'
[patent_app_type] => utility
[patent_app_number] => 13/517970
[patent_app_country] => US
[patent_app_date] => 2009-12-25
[patent_effective_date] => 0000-00-00
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[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 13517970
[rel_patent_id] =>[rel_patent_doc_number] =>) 13/517970 | Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer | Dec 24, 2009 | Issued |
Array
(
[id] => 8416560
[patent_doc_number] => 20120244061
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2012-09-27
[patent_title] => 'Electromagnetic Casting Apparatus for Silicon'
[patent_app_type] => utility
[patent_app_number] => 13/512074
[patent_app_country] => US
[patent_app_date] => 2009-12-25
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 13/512074 | Electromagnetic Casting Apparatus for Silicon | Dec 24, 2009 | Abandoned |
Array
(
[id] => 6386240
[patent_doc_number] => 20100162946
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2010-07-01
[patent_title] => 'System for continuous growing of monocrystalline silicon'
[patent_app_type] => utility
[patent_app_number] => 12/653910
[patent_app_country] => US
[patent_app_date] => 2009-12-17
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/653910 | System for continuous growing of monocrystalline silicon | Dec 16, 2009 | Abandoned |
Array
(
[id] => 6401311
[patent_doc_number] => 20100148403
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2010-06-17
[patent_title] => 'Systems and Methods For Manufacturing Cast Silicon'
[patent_app_type] => utility
[patent_app_number] => 12/638023
[patent_app_country] => US
[patent_app_date] => 2009-12-15
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/638023 | Systems and Methods For Manufacturing Cast Silicon | Dec 14, 2009 | Abandoned |
Array
(
[id] => 7477967
[patent_doc_number] => 20110247364
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2011-10-13
[patent_title] => 'PROCESS FOR PRODUCING MULTICRYSTALLINE SILICON INGOTS BY THE INDUCTION METHOD AND APPARATUS FOR CARRYING OUT THE SAME'
[patent_app_type] => utility
[patent_app_number] => 13/139612
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Array
(
[id] => 6447423
[patent_doc_number] => 20100089311
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2010-04-15
[patent_title] => 'Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same'
[patent_app_type] => utility
[patent_app_number] => 12/653229
[patent_app_country] => US
[patent_app_date] => 2009-12-10
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/653229 | Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same | Dec 9, 2009 | Abandoned |
Array
(
[id] => 7738733
[patent_doc_number] => 20120018732
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2012-01-26
[patent_title] => 'INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME'
[patent_app_type] => utility
[patent_app_number] => 13/144920
[patent_app_country] => US
[patent_app_date] => 2009-12-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[pdf_file] => publications/A1/0018/20120018732.pdf
[firstpage_image] =>[orig_patent_app_number] => 13144920
[rel_patent_id] =>[rel_patent_doc_number] =>) 13/144920 | INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME | Dec 3, 2009 | Abandoned |
Array
(
[id] => 6492236
[patent_doc_number] => 20100209319
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2010-08-19
[patent_title] => 'DEVICE FOR PRODUCING A CRYSTALLIZED SILICON BODY FOR SOLAR CELLS'
[patent_app_type] => utility
[patent_app_number] => 12/629997
[patent_app_country] => US
[patent_app_date] => 2009-12-03
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0209/20100209319.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/629997 | DEVICE FOR PRODUCING A CRYSTALLIZED SILICON BODY FOR SOLAR CELLS | Dec 2, 2009 | Abandoned |
Array
(
[id] => 6082159
[patent_doc_number] => 20110214806
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2011-09-08
[patent_title] => 'INGOT FORMED FROM BASIC INGOTS, WAFER MADE FROM SAID INGOT AND ASSOCIATED METHOD'
[patent_app_type] => utility
[patent_app_number] => 13/128609
[patent_app_country] => US
[patent_app_date] => 2009-11-26
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[pdf_file] => publications/A1/0214/20110214806.pdf
[firstpage_image] =>[orig_patent_app_number] => 13128609
[rel_patent_id] =>[rel_patent_doc_number] =>) 13/128609 | INGOT FORMED FROM BASIC INGOTS, WAFER MADE FROM SAID INGOT AND ASSOCIATED METHOD | Nov 25, 2009 | Abandoned |
Array
(
[id] => 5954225
[patent_doc_number] => 20110179993
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2011-07-28
[patent_title] => 'CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE'
[patent_app_type] => utility
[patent_app_number] => 12/991764
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[pdf_file] => publications/A1/0179/20110179993.pdf
[firstpage_image] =>[orig_patent_app_number] => 12991764
[rel_patent_id] =>[rel_patent_doc_number] =>) 12/991764 | CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Nov 25, 2009 | Abandoned |
Array
(
[id] => 6175249
[patent_doc_number] => 20110120365
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2011-05-26
[patent_title] => 'PROCESS FOR REMOVAL OF CONTAMINANTS FROM A MELT OF NON-FERROUS METALS AND APPARATUS FOR GROWING HIGH PURITY SILICON CRYSTALS'
[patent_app_type] => utility
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/626180 | PROCESS FOR REMOVAL OF CONTAMINANTS FROM A MELT OF NON-FERROUS METALS AND APPARATUS FOR GROWING HIGH PURITY SILICON CRYSTALS | Nov 24, 2009 | Abandoned |
Array
(
[id] => 6167055
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[patent_issue_date] => 2011-07-21
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[rel_patent_id] =>[rel_patent_doc_number] =>) 13/002565 | CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD | Nov 19, 2009 | Abandoned |
Array
(
[id] => 16289943
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[patent_issue_date] => 2020-09-08
[patent_title] => Method for electromagnetic casting of silicon in a conductive crucible using a highest- and lowest-disposed induction coil
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Array
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/591333 | Method and apparatus for growth of multi-component single crystals | Nov 16, 2009 | Abandoned |
Array
(
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Array
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[patent_issue_date] => 2010-02-25
[patent_title] => 'SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME'
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Array
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[patent_title] => 'Upper heater, single crystal production apparatus, and method for producing single crystal'
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[patent_current_assignee] =>[type] => publication
[pdf_file] => publications/A1/0229/20100229788.pdf
[firstpage_image] =>[orig_patent_app_number] => 12568291
[rel_patent_id] =>[rel_patent_doc_number] =>) 12/568291 | Manufacturing method for three-dimensional GaN epitaxial structure | Sep 27, 2009 | Issued |