Victor R Kostak
Examiner (ID: 1879)
Most Active Art Unit | 2602 |
Art Unit(s) | 2622, 2602, 2611, 2422, 2614, 2711, 2899 |
Total Applications | 3434 |
Issued Applications | 2947 |
Pending Applications | 96 |
Abandoned Applications | 357 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 10554995
[patent_doc_number] => 09279193
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2016-03-08
[patent_title] => 'Method of making a gallium nitride crystalline composition having a low dislocation density'
[patent_app_type] => utility
[patent_app_number] => 11/558048
[patent_app_country] => US
[patent_app_date] => 2006-11-09
[patent_effective_date] => 0000-00-00
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[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 11558048
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/558048 | Method of making a gallium nitride crystalline composition having a low dislocation density | Nov 8, 2006 | Issued |
Array
(
[id] => 5157382
[patent_doc_number] => 20070170426
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2007-07-26
[patent_title] => 'Silicon crystallizing mask, apparatus for crystallizing silicon having the mask and method for crystallizing silicon using the apparatus'
[patent_app_type] => utility
[patent_app_number] => 11/584069
[patent_app_country] => US
[patent_app_date] => 2006-10-20
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0170/20070170426.pdf
[firstpage_image] =>[orig_patent_app_number] => 11584069
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/584069 | Silicon crystallizing mask, apparatus for crystallizing silicon having the mask and method for crystallizing silicon using the apparatus | Oct 19, 2006 | Abandoned |
Array
(
[id] => 5133025
[patent_doc_number] => 20070074652
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2007-04-05
[patent_title] => 'Method for epitaxy with low thermal budget and use thereof'
[patent_app_type] => utility
[patent_app_number] => 11/523824
[patent_app_country] => US
[patent_app_date] => 2006-09-14
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0074/20070074652.pdf
[firstpage_image] =>[orig_patent_app_number] => 11523824
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/523824 | Method for epitaxy with low thermal budget and use thereof | Sep 13, 2006 | Abandoned |
Array
(
[id] => 6575608
[patent_doc_number] => 20100096727
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2010-04-22
[patent_title] => 'SEMI-CONDUCTOR SUBSTRATE AND METHOD OF MASKING LAYER FOR PRODUCING A FREE-STANDING SEMI-CONDUCTOR SUBSTRATE BY MEANS OF HYDRIDE-GAS PHASE EPITAXY'
[patent_app_type] => utility
[patent_app_number] => 11/996446
[patent_app_country] => US
[patent_app_date] => 2006-08-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_no_of_words] => 4598
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[pdf_file] => publications/A1/0096/20100096727.pdf
[firstpage_image] =>[orig_patent_app_number] => 11996446
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/996446 | Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy | Aug 23, 2006 | Issued |
Array
(
[id] => 5469639
[patent_doc_number] => 20090242805
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2009-10-01
[patent_title] => 'SYSTEMS AND METHODS FOR UNIFORM SEQUENTIAL LATERAL SOLIDIFICATION OF THIN FILMS USING HIGH FREQUENCY LASERS'
[patent_app_type] => utility
[patent_app_number] => 12/063814
[patent_app_country] => US
[patent_app_date] => 2006-08-16
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0242/20090242805.pdf
[firstpage_image] =>[orig_patent_app_number] => 12063814
[rel_patent_id] =>[rel_patent_doc_number] =>) 12/063814 | SYSTEMS AND METHODS FOR UNIFORM SEQUENTIAL LATERAL SOLIDIFICATION OF THIN FILMS USING HIGH FREQUENCY LASERS | Aug 15, 2006 | Abandoned |
Array
(
[id] => 5435707
[patent_doc_number] => 20090170294
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2009-07-02
[patent_title] => 'METHOD FOR FILM DEPOSITING GROUP III NITRIDE SUCH AS GALLIUM NITRIDE'
[patent_app_type] => utility
[patent_app_number] => 11/997980
[patent_app_country] => US
[patent_app_date] => 2006-08-03
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0170/20090170294.pdf
[firstpage_image] =>[orig_patent_app_number] => 11997980
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/997980 | METHOD FOR FILM DEPOSITING GROUP III NITRIDE SUCH AS GALLIUM NITRIDE | Aug 2, 2006 | Abandoned |
Array
(
[id] => 6535434
[patent_doc_number] => 20100221539
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2010-09-02
[patent_title] => 'AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate'
[patent_app_type] => utility
[patent_app_number] => 11/997153
[patent_app_country] => US
[patent_app_date] => 2006-07-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_no_of_words] => 6871
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[pdf_file] => publications/A1/0221/20100221539.pdf
[firstpage_image] =>[orig_patent_app_number] => 11997153
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/997153 | AlN crystal and method for growing the same, and AlN crystal substrate | Jul 9, 2006 | Issued |
Array
(
[id] => 5446312
[patent_doc_number] => 20090047538
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2009-02-19
[patent_title] => 'Method for Production of a Bead Single Crystal'
[patent_app_type] => utility
[patent_app_number] => 11/988521
[patent_app_country] => US
[patent_app_date] => 2006-07-05
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0047/20090047538.pdf
[firstpage_image] =>[orig_patent_app_number] => 11988521
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/988521 | Method for Production of a Bead Single Crystal | Jul 4, 2006 | Abandoned |
Array
(
[id] => 5138217
[patent_doc_number] => 20070000433
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2007-01-04
[patent_title] => 'III-nitride semiconductor device fabrication'
[patent_app_type] => utility
[patent_app_number] => 11/452547
[patent_app_country] => US
[patent_app_date] => 2006-06-14
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[pdf_file] => publications/A1/0000/20070000433.pdf
[firstpage_image] =>[orig_patent_app_number] => 11452547
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/452547 | III-nitride semiconductor device fabrication | Jun 13, 2006 | Issued |
Array
(
[id] => 7710872
[patent_doc_number] => 08092594
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2012-01-10
[patent_title] => 'Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type'
[patent_app_type] => utility
[patent_app_number] => 11/920018
[patent_app_country] => US
[patent_app_date] => 2006-06-07
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/08/092/08092594.pdf
[firstpage_image] =>[orig_patent_app_number] => 11920018
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/920018 | Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type | Jun 6, 2006 | Issued |
Array
(
[id] => 7739343
[patent_doc_number] => 08105548
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2012-01-31
[patent_title] => 'Manufacturing device for zeolite membrane'
[patent_app_type] => utility
[patent_app_number] => 11/916765
[patent_app_country] => US
[patent_app_date] => 2006-06-06
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/08/105/08105548.pdf
[firstpage_image] =>[orig_patent_app_number] => 11916765
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/916765 | Manufacturing device for zeolite membrane | Jun 5, 2006 | Issued |
Array
(
[id] => 5444186
[patent_doc_number] => 20090045412
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2009-02-19
[patent_title] => 'Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate'
[patent_app_type] => utility
[patent_app_number] => 11/921929
[patent_app_country] => US
[patent_app_date] => 2006-05-23
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[pdf_file] => publications/A1/0045/20090045412.pdf
[firstpage_image] =>[orig_patent_app_number] => 11921929
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/921929 | Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate | May 22, 2006 | Issued |
Array
(
[id] => 4722271
[patent_doc_number] => 20080202424
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2008-08-28
[patent_title] => 'Device For Introducing Reaction Gases Into A Reaction Chamber And Epitaxial Reactor Which Uses Said Device'
[patent_app_type] => utility
[patent_app_number] => 11/914000
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/914000 | Device For Introducing Reaction Gases Into A Reaction Chamber And Epitaxial Reactor Which Uses Said Device | May 22, 2006 | Abandoned |
Array
(
[id] => 4788597
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[patent_country] => US
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[patent_issue_date] => 2008-11-27
[patent_title] => 'Process for Producing Silicon Carbide Single Crystal'
[patent_app_type] => utility
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/886065 | Process for producing silicon carbide single crystal | May 22, 2006 | Issued |
Array
(
[id] => 4869275
[patent_doc_number] => 20080196209
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[patent_issue_date] => 2008-08-21
[patent_title] => 'Method And Apparatus For Refining A Molten Material'
[patent_app_type] => utility
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/916898 | Method and apparatus for refining a molten material | May 9, 2006 | Issued |
Array
(
[id] => 8663743
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[patent_kind] => B2
[patent_issue_date] => 2013-02-19
[patent_title] => 'Oxide single crystal and method for production thereof, and single crystal wafer'
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[patent_app_number] => 11/919155
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Array
(
[id] => 5490452
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[patent_kind] => A1
[patent_issue_date] => 2009-11-26
[patent_title] => 'Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate'
[patent_app_type] => utility
[patent_app_number] => 12/293448
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 12/293448 | Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate | Apr 10, 2006 | Abandoned |
Array
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Array
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[patent_title] => 'Method of making highly uniform low-stress single crystals with reduced scattering'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/366634 | Method of making highly uniform low-stress single crystals with reduced scattering | Mar 1, 2006 | Abandoned |
Array
(
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[patent_issue_date] => 2009-02-26
[patent_title] => 'Method for Growing Thin Semiconductor Ribbons'
[patent_app_type] => utility
[patent_app_number] => 11/884242
[patent_app_country] => US
[patent_app_date] => 2006-03-01
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/884242 | Method for Growing Thin Semiconductor Ribbons | Feb 28, 2006 | Abandoned |