Search

Victor R Kostak

Examiner (ID: 1879)

Most Active Art Unit
2602
Art Unit(s)
2622, 2602, 2611, 2422, 2614, 2711, 2899
Total Applications
3434
Issued Applications
2947
Pending Applications
96
Abandoned Applications
357

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 17156544 [patent_doc_number] => 20210317595 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-10-14 [patent_title] => METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL INGOT AND APPARATUS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL INGOT [patent_app_type] => utility [patent_app_number] => 17/268189 [patent_app_country] => US [patent_app_date] => 2019-07-26 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 12713 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 46 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17268189 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/268189
Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material Jul 25, 2019 Issued
Array ( [id] => 15932139 [patent_doc_number] => 20200157703 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-05-21 [patent_title] => BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON [patent_app_type] => utility [patent_app_number] => 16/522059 [patent_app_country] => US [patent_app_date] => 2019-07-25 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3135 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -13 [patent_words_short_claim] => 90 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16522059 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/522059
BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON Jul 24, 2019 Abandoned
Array ( [id] => 16191270 [patent_doc_number] => 20200232119 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-07-23 [patent_title] => METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE [patent_app_type] => utility [patent_app_number] => 16/520544 [patent_app_country] => US [patent_app_date] => 2019-07-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 4114 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 72 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16520544 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/520544
METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE Jul 23, 2019 Abandoned
Array ( [id] => 17060424 [patent_doc_number] => 11105016 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2021-08-31 [patent_title] => Crystal growth apparatus with controlled center position of heating [patent_app_type] => utility [patent_app_number] => 16/519242 [patent_app_country] => US [patent_app_date] => 2019-07-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 5 [patent_no_of_words] => 4808 [patent_no_of_claims] => 13 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 134 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16519242 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/519242
Crystal growth apparatus with controlled center position of heating Jul 22, 2019 Issued
Array ( [id] => 15414817 [patent_doc_number] => 20200027731 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-23 [patent_title] => FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE [patent_app_type] => utility [patent_app_number] => 16/512447 [patent_app_country] => US [patent_app_date] => 2019-07-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3964 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -16 [patent_words_short_claim] => 51 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512447 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/512447
FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Jul 15, 2019 Abandoned
Array ( [id] => 16369382 [patent_doc_number] => 10801125 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2020-10-13 [patent_title] => Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly [patent_app_type] => utility [patent_app_number] => 16/512756 [patent_app_country] => US [patent_app_date] => 2019-07-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 8 [patent_figures_cnt] => 13 [patent_no_of_words] => 7514 [patent_no_of_claims] => 20 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 164 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512756 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/512756
Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly Jul 15, 2019 Issued
Array ( [id] => 15408895 [patent_doc_number] => 20200024769 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-23 [patent_title] => PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD [patent_app_type] => utility [patent_app_number] => 16/512669 [patent_app_country] => US [patent_app_date] => 2019-07-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5232 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 42 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512669 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/512669
Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness Jul 15, 2019 Issued
Array ( [id] => 15442597 [patent_doc_number] => 20200035482 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-30 [patent_title] => Buffer layer for Gallium Nitride-on-Silicon epitaxy [patent_app_type] => utility [patent_app_number] => 16/510547 [patent_app_country] => US [patent_app_date] => 2019-07-12 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5469 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 122 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16510547 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/510547
Buffer layer for Gallium Nitride-on-Silicon epitaxy Jul 11, 2019 Abandoned
Array ( [id] => 15364457 [patent_doc_number] => 20200017993 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-01-16 [patent_title] => GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL [patent_app_type] => utility [patent_app_number] => 16/508223 [patent_app_country] => US [patent_app_date] => 2019-07-10 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6321 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 56 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16508223 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/508223
Group-III nitride substrate containing carbon at a surface region thereof Jul 9, 2019 Issued
Array ( [id] => 16073413 [patent_doc_number] => 20200190693 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-06-18 [patent_title] => SILICONE CARBIDE CRYSTALS AND MANUFACTURING METHOD THEREOF [patent_app_type] => utility [patent_app_number] => 16/450930 [patent_app_country] => US [patent_app_date] => 2019-06-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3161 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -8 [patent_words_short_claim] => 143 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16450930 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/450930
Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10[?]7 Ohm-cm and manufacturing method therefor Jun 23, 2019 Issued
Array ( [id] => 17010925 [patent_doc_number] => 20210242086 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-08-05 [patent_title] => METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE [patent_app_type] => utility [patent_app_number] => 17/049156 [patent_app_country] => US [patent_app_date] => 2019-05-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 18574 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -22 [patent_words_short_claim] => 71 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17049156 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/049156
METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE May 29, 2019 Pending
Array ( [id] => 16947961 [patent_doc_number] => 20210206652 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-07-08 [patent_title] => ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY [patent_app_type] => utility [patent_app_number] => 17/058645 [patent_app_country] => US [patent_app_date] => 2019-05-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 4442 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -18 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17058645 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/058645
ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY May 23, 2019 Pending
Array ( [id] => 17752715 [patent_doc_number] => 20220230920 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-07-21 [patent_title] => METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE [patent_app_type] => utility [patent_app_number] => 17/605002 [patent_app_country] => US [patent_app_date] => 2019-05-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6345 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -8 [patent_words_short_claim] => 265 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17605002 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/605002
Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate May 22, 2019 Issued
Array ( [id] => 19339530 [patent_doc_number] => 12049711 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2024-07-30 [patent_title] => Method for producing a mechanical vibrator comprising epitaxially growing a cubic crystal on a material layer to form a laminate structure which is patterned to form a vibrator shape part [patent_app_type] => utility [patent_app_number] => 16/973706 [patent_app_country] => US [patent_app_date] => 2019-05-20 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 8 [patent_figures_cnt] => 8 [patent_no_of_words] => 4579 [patent_no_of_claims] => 20 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 168 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16973706 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/973706
Method for producing a mechanical vibrator comprising epitaxially growing a cubic crystal on a material layer to form a laminate structure which is patterned to form a vibrator shape part May 19, 2019 Issued
Array ( [id] => 19457994 [patent_doc_number] => 12098475 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2024-09-24 [patent_title] => Methods for forming large area single crystal diamond substrates with high crystallographic alignment [patent_app_type] => utility [patent_app_number] => 17/055943 [patent_app_country] => US [patent_app_date] => 2019-05-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 14 [patent_figures_cnt] => 19 [patent_no_of_words] => 17706 [patent_no_of_claims] => 29 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 229 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17055943 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/055943
Methods for forming large area single crystal diamond substrates with high crystallographic alignment May 15, 2019 Issued
Array ( [id] => 14812769 [patent_doc_number] => 20190272994 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2019-09-05 [patent_title] => HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS [patent_app_type] => utility [patent_app_number] => 16/412328 [patent_app_country] => US [patent_app_date] => 2019-05-14 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 9773 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -29 [patent_words_short_claim] => 112 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16412328 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/412328
HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS May 13, 2019 Abandoned
Array ( [id] => 16453020 [patent_doc_number] => 20200362446 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-11-19 [patent_title] => FABRICATION OF METAL-PHOSPIDE CRYSTALS [patent_app_type] => utility [patent_app_number] => 16/411651 [patent_app_country] => US [patent_app_date] => 2019-05-14 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3876 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 28 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16411651 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/411651
Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers May 13, 2019 Issued
Array ( [id] => 14778903 [patent_doc_number] => 20190264349 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2019-08-29 [patent_title] => METHOD FOR MANUFACTURING CRYSTAL INGOT [patent_app_type] => utility [patent_app_number] => 16/398732 [patent_app_country] => US [patent_app_date] => 2019-04-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3080 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -10 [patent_words_short_claim] => 59 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16398732 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/398732
METHOD FOR MANUFACTURING CRYSTAL INGOT Apr 29, 2019 Abandoned
Array ( [id] => 16422314 [patent_doc_number] => 20200347512 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-11-05 [patent_title] => SPINCOATING EPITAXIAL FILMS [patent_app_type] => utility [patent_app_number] => 16/398430 [patent_app_country] => US [patent_app_date] => 2019-04-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3391 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 71 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16398430 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/398430
SPINCOATING EPITAXIAL FILMS Apr 29, 2019 Abandoned
Array ( [id] => 14723015 [patent_doc_number] => 20190252571 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2019-08-15 [patent_title] => METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS [patent_app_type] => utility [patent_app_number] => 16/397572 [patent_app_country] => US [patent_app_date] => 2019-04-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 7539 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -14 [patent_words_short_claim] => 133 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16397572 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/397572
METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS Apr 28, 2019 Abandoned
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