Application number | Title of the application | Filing Date | Status |
---|
Array
(
[id] => 17156544
[patent_doc_number] => 20210317595
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2021-10-14
[patent_title] => METHOD OF GROWING SEMI-INSULATING SILICON CARBIDE SINGLE CRYSTAL INGOT AND APPARATUS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL INGOT
[patent_app_type] => utility
[patent_app_number] => 17/268189
[patent_app_country] => US
[patent_app_date] => 2019-07-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 12713
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -17
[patent_words_short_claim] => 46
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17268189
[rel_patent_id] =>[rel_patent_doc_number] =>) 17/268189 | Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material | Jul 25, 2019 | Issued |
Array
(
[id] => 15932139
[patent_doc_number] => 20200157703
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-05-21
[patent_title] => BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON
[patent_app_type] => utility
[patent_app_number] => 16/522059
[patent_app_country] => US
[patent_app_date] => 2019-07-25
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 3135
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -13
[patent_words_short_claim] => 90
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16522059
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/522059 | BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON | Jul 24, 2019 | Abandoned |
Array
(
[id] => 16191270
[patent_doc_number] => 20200232119
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-07-23
[patent_title] => METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE
[patent_app_type] => utility
[patent_app_number] => 16/520544
[patent_app_country] => US
[patent_app_date] => 2019-07-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 4114
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -9
[patent_words_short_claim] => 72
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16520544
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/520544 | METHOD OF FORMING SINGLE-CRYSTAL GROUP-III NITRIDE | Jul 23, 2019 | Abandoned |
Array
(
[id] => 17060424
[patent_doc_number] => 11105016
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2021-08-31
[patent_title] => Crystal growth apparatus with controlled center position of heating
[patent_app_type] => utility
[patent_app_number] => 16/519242
[patent_app_country] => US
[patent_app_date] => 2019-07-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 5
[patent_no_of_words] => 4808
[patent_no_of_claims] => 13
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 134
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16519242
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/519242 | Crystal growth apparatus with controlled center position of heating | Jul 22, 2019 | Issued |
Array
(
[id] => 15414817
[patent_doc_number] => 20200027731
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-01-23
[patent_title] => FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
[patent_app_type] => utility
[patent_app_number] => 16/512447
[patent_app_country] => US
[patent_app_date] => 2019-07-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 3964
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -16
[patent_words_short_claim] => 51
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512447
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/512447 | FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | Jul 15, 2019 | Abandoned |
Array
(
[id] => 16369382
[patent_doc_number] => 10801125
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2020-10-13
[patent_title] => Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly
[patent_app_type] => utility
[patent_app_number] => 16/512756
[patent_app_country] => US
[patent_app_date] => 2019-07-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 13
[patent_no_of_words] => 7514
[patent_no_of_claims] => 20
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 164
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512756
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/512756 | Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly | Jul 15, 2019 | Issued |
Array
(
[id] => 15408895
[patent_doc_number] => 20200024769
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-01-23
[patent_title] => PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD
[patent_app_type] => utility
[patent_app_number] => 16/512669
[patent_app_country] => US
[patent_app_date] => 2019-07-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 5232
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -9
[patent_words_short_claim] => 42
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16512669
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/512669 | Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness | Jul 15, 2019 | Issued |
Array
(
[id] => 15442597
[patent_doc_number] => 20200035482
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-01-30
[patent_title] => Buffer layer for Gallium Nitride-on-Silicon epitaxy
[patent_app_type] => utility
[patent_app_number] => 16/510547
[patent_app_country] => US
[patent_app_date] => 2019-07-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 5469
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -17
[patent_words_short_claim] => 122
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16510547
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/510547 | Buffer layer for Gallium Nitride-on-Silicon epitaxy | Jul 11, 2019 | Abandoned |
Array
(
[id] => 15364457
[patent_doc_number] => 20200017993
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-01-16
[patent_title] => GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
[patent_app_type] => utility
[patent_app_number] => 16/508223
[patent_app_country] => US
[patent_app_date] => 2019-07-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 6321
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -9
[patent_words_short_claim] => 56
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16508223
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/508223 | Group-III nitride substrate containing carbon at a surface region thereof | Jul 9, 2019 | Issued |
Array
(
[id] => 16073413
[patent_doc_number] => 20200190693
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-06-18
[patent_title] => SILICONE CARBIDE CRYSTALS AND MANUFACTURING METHOD THEREOF
[patent_app_type] => utility
[patent_app_number] => 16/450930
[patent_app_country] => US
[patent_app_date] => 2019-06-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 3161
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -8
[patent_words_short_claim] => 143
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16450930
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/450930 | Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10[?]7 Ohm-cm and manufacturing method therefor | Jun 23, 2019 | Issued |
Array
(
[id] => 17010925
[patent_doc_number] => 20210242086
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2021-08-05
[patent_title] => METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE
[patent_app_type] => utility
[patent_app_number] => 17/049156
[patent_app_country] => US
[patent_app_date] => 2019-05-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 18574
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -22
[patent_words_short_claim] => 71
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17049156
[rel_patent_id] =>[rel_patent_doc_number] =>) 17/049156 | METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE | May 29, 2019 | Pending |
Array
(
[id] => 16947961
[patent_doc_number] => 20210206652
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2021-07-08
[patent_title] => ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY
[patent_app_type] => utility
[patent_app_number] => 17/058645
[patent_app_country] => US
[patent_app_date] => 2019-05-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 4442
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -18
[patent_words_short_claim] => 2
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17058645
[rel_patent_id] =>[rel_patent_doc_number] =>) 17/058645 | ANISOTROPIC MATERIALS AND METHODS OF FORMING ANISOTROPIC MATERIALS EXHIBITING HIGH OPTICAL ANISOTROPY | May 23, 2019 | Pending |
Array
(
[id] => 17752715
[patent_doc_number] => 20220230920
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2022-07-21
[patent_title] => METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
[patent_app_type] => utility
[patent_app_number] => 17/605002
[patent_app_country] => US
[patent_app_date] => 2019-05-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 6345
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -8
[patent_words_short_claim] => 265
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17605002
[rel_patent_id] =>[rel_patent_doc_number] =>) 17/605002 | Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate | May 22, 2019 | Issued |
Array
(
[id] => 19339530
[patent_doc_number] => 12049711
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2024-07-30
[patent_title] => Method for producing a mechanical vibrator comprising epitaxially growing a cubic crystal on a material layer to form a laminate structure which is patterned to form a vibrator shape part
[patent_app_type] => utility
[patent_app_number] => 16/973706
[patent_app_country] => US
[patent_app_date] => 2019-05-20
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 8
[patent_no_of_words] => 4579
[patent_no_of_claims] => 20
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 168
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16973706
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/973706 | Method for producing a mechanical vibrator comprising epitaxially growing a cubic crystal on a material layer to form a laminate structure which is patterned to form a vibrator shape part | May 19, 2019 | Issued |
Array
(
[id] => 19457994
[patent_doc_number] => 12098475
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2024-09-24
[patent_title] => Methods for forming large area single crystal diamond substrates with high crystallographic alignment
[patent_app_type] => utility
[patent_app_number] => 17/055943
[patent_app_country] => US
[patent_app_date] => 2019-05-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 14
[patent_figures_cnt] => 19
[patent_no_of_words] => 17706
[patent_no_of_claims] => 29
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 229
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17055943
[rel_patent_id] =>[rel_patent_doc_number] =>) 17/055943 | Methods for forming large area single crystal diamond substrates with high crystallographic alignment | May 15, 2019 | Issued |
Array
(
[id] => 14812769
[patent_doc_number] => 20190272994
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2019-09-05
[patent_title] => HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
[patent_app_type] => utility
[patent_app_number] => 16/412328
[patent_app_country] => US
[patent_app_date] => 2019-05-14
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 9773
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -29
[patent_words_short_claim] => 112
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16412328
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/412328 | HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS | May 13, 2019 | Abandoned |
Array
(
[id] => 16453020
[patent_doc_number] => 20200362446
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-11-19
[patent_title] => FABRICATION OF METAL-PHOSPIDE CRYSTALS
[patent_app_type] => utility
[patent_app_number] => 16/411651
[patent_app_country] => US
[patent_app_date] => 2019-05-14
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 3876
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -17
[patent_words_short_claim] => 28
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16411651
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/411651 | Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers | May 13, 2019 | Issued |
Array
(
[id] => 14778903
[patent_doc_number] => 20190264349
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2019-08-29
[patent_title] => METHOD FOR MANUFACTURING CRYSTAL INGOT
[patent_app_type] => utility
[patent_app_number] => 16/398732
[patent_app_country] => US
[patent_app_date] => 2019-04-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 3080
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -10
[patent_words_short_claim] => 59
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16398732
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/398732 | METHOD FOR MANUFACTURING CRYSTAL INGOT | Apr 29, 2019 | Abandoned |
Array
(
[id] => 16422314
[patent_doc_number] => 20200347512
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2020-11-05
[patent_title] => SPINCOATING EPITAXIAL FILMS
[patent_app_type] => utility
[patent_app_number] => 16/398430
[patent_app_country] => US
[patent_app_date] => 2019-04-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 3391
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -17
[patent_words_short_claim] => 71
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16398430
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/398430 | SPINCOATING EPITAXIAL FILMS | Apr 29, 2019 | Abandoned |
Array
(
[id] => 14723015
[patent_doc_number] => 20190252571
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2019-08-15
[patent_title] => METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS
[patent_app_type] => utility
[patent_app_number] => 16/397572
[patent_app_country] => US
[patent_app_date] => 2019-04-29
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 0
[patent_figures_cnt] => 0
[patent_no_of_words] => 7539
[patent_no_of_claims] => 0
[patent_no_of_ind_claims] => -14
[patent_words_short_claim] => 133
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16397572
[rel_patent_id] =>[rel_patent_doc_number] =>) 16/397572 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | Apr 28, 2019 | Abandoned |