| Application number | Title of the application | Filing Date | Status |
|---|
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[patent_issue_date] => 1987-10-06
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[patent_issue_date] => 1987-05-12
[patent_title] => 'Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers'
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[patent_app_number] => 6/785640
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[patent_issue_date] => 1988-09-27
[patent_title] => 'Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen'
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| 06/749921 | METHOD FOR EPITAXIALLY GROWING GE X SI 1-X LAYERS ON SI | Jun 27, 1985 | Abandoned |
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[patent_issue_date] => 1986-10-07
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| 06/717119 | PROCESS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES | Mar 27, 1985 | Abandoned |
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