Lone Star Silicon Innovations LLC v. Nanya Technology Corporation et al > Summary
Court Case Number 2:16-cv-01117
Filing Date Oct 7, 2016
Court Texas Eastern District Court
Status Unknown
Plaintiff Attorneys
5Lone Star Silicon Innovations LLC
Attorney Name: Jennifer Parker Ainsworth
Wilson Robertson & Cornelius
Lone Star Silicon Innovations LLC
Attorney Name: David A. Gosse
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: Nicole L. Little
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: Timothy P. Maloney
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: Joseph F. Marinelli
Fitch, Even, Tabin & Flannery LLP
Defendant Attorneys
13Nanya Technology Corporation U.S.A.
Attorney Name: Brian Craft
Findlay Craft
Nanya Technology Delaware
Attorney Name: Brian Craft
Findlay Craft
Nanya Technology Corporation U.S.A.
Attorney Name: Brian Craft
Findlay Craft
Nanya Technology Corporation U.S.A.
Attorney Name: Eric H. Findlay
Findlay Craft
Nanya Technology Corporation U.S.A.
Attorney Name: Casey H. Kempner
LTL Attorneys
Nanya Technology Delaware
Attorney Name: Casey H. Kempner
LTL Attorneys
Nanya Technology Corporation U.S.A.
Attorney Name: Casey H. Kempner
LTL Attorneys
Nanya Technology Corporation U.S.A.
Attorney Name: Peter J. Wied
LTL Attorneys
Nanya Technology Delaware
Attorney Name: Peter J. Wied
LTL Attorneys
Nanya Technology Corporation U.S.A.
Attorney Name: Peter J. Wied
LTL Attorneys
Nanya Technology Corporation U.S.A.
Attorney Name: Vincent K. Yip
LTL Attorneys
Nanya Technology Delaware
Attorney Name: Vincent K. Yip
LTL Attorneys
Nanya Technology Corporation U.S.A.
Attorney Name: Vincent K. Yip
LTL Attorneys
Cause
35:271 Patent Infringement
Related Patents
Doc No | Title | Issue date |
---|---|---|
06388330 | Low dielectric constant etch stop layers in integrated circuit interconnects | May 14, 2002 |
06326231 | Use of silicon oxynitride ARC for metal layers | Dec 4, 2001 |
06103611 | Methods and arrangements for improved spacer formation within a semiconductor device | Aug 15, 2000 |
06097061 | Trenched gate metal oxide semiconductor device and method | Aug 1, 2000 |