Lone Star Silicon Innovations LLC v. United Microelectronics Corporation et al > Summary
Court Case Number 3:17-cv-04033
Filing Date Jul 18, 2017
Termination Date Jan 22, 2018
Court California Northern District Court
Status Judgment - Motion Before Trial
Appeal2018-1581
JudgesWilliam Alsup
Plaintiff
Plaintiff Attorneys
6Lone Star Silicon Innovations LLC
Attorney Name: Jennifer Parker Ainsworth
Wilson Robertson & Cornelius
Lone Star Silicon Innovations LLC
Attorney Name: Jon A Birmingham
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: David A. Gosse
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: Nicole L. Little
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: Timothy P. Maloney
Fitch, Even, Tabin & Flannery LLP
Lone Star Silicon Innovations LLC
Attorney Name: Joseph F. Marinelli
Fitch, Even, Tabin & Flannery LLP
Defendant Attorneys
10UMC GROUP (USA)
Attorney Name: Jeffrey L. Johnson
Orrick Herrington & Sutcliffe
UMC GROUP (USA)
Attorney Name: Christopher Kao
Pillsbury Winthrop Shaw Pittman
United Microelectronics Corporation
Attorney Name: Christopher Kao
Pillsbury Winthrop Shaw Pittman
UMC GROUP (USA)
Attorney Name: Abigail Lubow
Vinson & Elkins
United Microelectronics Corporation
Attorney Name: Abigail Lubow
Vinson & Elkins
UMC GROUP (USA)
Attorney Name: David J. Tsai
Pillsbury Winthrop Shaw Pittman
United Microelectronics Corporation
Attorney Name: David J. Tsai
Pillsbury Winthrop Shaw Pittman
UMC GROUP (USA)
Attorney Name: Brock S. Weber
Vinson & Elkins
United Microelectronics Corporation
Attorney Name: Brock S. Weber
Vinson & Elkins
Cause
35:271 Patent Infringement
Related Patents
| Doc No | Title | Issue date |
|---|---|---|
| 06388330 | Low dielectric constant etch stop layers in integrated circuit interconnects | May 14, 2002 |
| 06221767 | Method of fabricating a silicide landing pad | Apr 24, 2001 |
| 06103611 | Methods and arrangements for improved spacer formation within a semiconductor device | Aug 15, 2000 |
| 05973372 | Silicided shallow junction transistor formation and structure with high and low breakdown voltages | Oct 26, 1999 |
