Case number IPR2019-00023
Samsung Electronics Co., Ltd. v. Invensas Bonding Technologies, Inc. > Documents
| Date Field | Doc. No. | Party | Description |
|---|---|---|---|
| Feb 1, 2019 | 12 | Notice of Refund Download | |
| Jan 8, 2019 | 11 | Petitioner's Request for Refund of Fees Download | |
| Dec 21, 2018 | 10 | Termination Decision Document Download | |
| Dec 13, 2018 | 9 | Joint Request to File Settlement Agreement and Consent Letter As Business Confidential Information Under 35 U.S.C. 317 and 37 C.F.R. 42.74 Download | |
| Dec 13, 2018 | 8 | Joint Motion to Terminate Proceeding Pursuant to 35 U.S.C. 317 and 37 C.F.R. 42.74 Download | |
| Nov 30, 2018 | 7 | Notice of Accord Filing Date Download | |
| Oct 31, 2018 | 6 | Patent Owner's Motion for District Court (Phillips) Patent Claim Construction Download | |
| Oct 22, 2018 | 5 | Patent Owner's Mandatory Notices Download | |
| Oct 22, 2018 | 4 | Patent Owner's Power of Attorney Download | |
| Oct 2, 2018 | 1016 | Elsevier Declaration Regarding Tong (Ex-1009) (Part 1 of 2) Download | |
| Oct 2, 2018 | 1018 | Hall-Ellis Declaration Regarding Harendt (Ex-1005) Download | |
| Oct 2, 2018 | 1013 | John L. Vossen et al., Thin Film Processes II, Academic Press (1991) (excerpts) Download | |
| Oct 2, 2018 | 1019 | U.S. Patent No. 5,503,704, Nitrogen Based Low Temperature Direct Bonding (1996) ("Bower") Download | |
| Oct 2, 2018 | 1014 | Ricardo D'Agostino, Plasma Etching of Si and SiO2 in SF6- O2 mixtures, 52(1) J. Appl. Phys. 162 (1981) Download | |
| Oct 2, 2018 | 1002 | Prosecution File History of U.S. Patent No. 8,153,505 Download | |
| Oct 2, 2018 | 1022 | Robert W. Bower, Low temperature Si3N4 direct bonding, 62 Appl. Phys. Lett. 26 (1993) Download | |
| Oct 2, 2018 | 1007 | M. Reiche, The Effect of a Plasma Pretreatment on the Si/Si Bonding Behaviour, 97-36 Electrochemical Society Proceedings 437 (1998) ("Reiche") Download | |
| Oct 2, 2018 | 1004 | Curriculum Vitae for Dr. Charles Hunt Download | |
| Oct 2, 2018 | 1009 | Q. Tong et al., Semiconductor Wafer Bonding: Recent Developments, 37 Materials Chemistry and Physics 101 (1994) ("Tong') Download | |
| Oct 2, 2018 | 1020 | Yang Li, Systematic Low Temperature Bonding and Its Application To The Hydrogen Ion Cut Process And Three- Dimensional Structures, University of California, Davis (1999) Download | |
| Oct 2, 2018 | 1005 | C. Harendt, Vertical Polysilicon Interconnects by Aligned Wafer Bonding, 97-36 Electrochemical Society Proceedings 501 (1998) ("Harendt") Download | |
| Oct 2, 2018 | 1016 | Elsevier Declaration Regarding Tong (Ex-1009) (Part 1 of 2) Download | |
| Oct 2, 2018 | 3 | Power of Attorney Samsung Electronics America, Inc. Download | |
| Oct 2, 2018 | 1006 | Y. Li et al., Systematic Low Temperature Silicon Bonding Using Pressure and Temperature, 1998 Jpn. J. Appl. Phys. 37 (1998) ("Li") Download | |
| Oct 2, 2018 | 1025 | Declaration of Electrochemical Society regarding Reiche (Ex- 1007) Download | |
| Oct 2, 2018 | 1021 | Qin-Yi Tong, Wafer Bonding and Layer Splitting for Microsystems, 11 Adv. Mater. 17 (1999) Download | |
| Oct 2, 2018 | 2 | Power of Attorney Samsung Electronics Co., Ltd. Download | |
| Oct 2, 2018 | 1012 | John L. Vossen et al., Thin Film Processes, Academic Press (1978) (excerpts) Download | |
| Oct 2, 2018 | 1010 | Q. Tong et al., Semiconductor Wafer Bonding: Science and Technology, John Wiley & Sons, Inc. (1999) Download | |
| Oct 2, 2018 | 1023 | Watters Declaration regarding Li (Ex-1006) Download | |
| Oct 2, 2018 | 1 | PETITION FOR INTER PARTES REVIEW OF U.S. PATENT NO. 8,153,505 Download | |
| Oct 2, 2018 | 1011 | Johann Steinkirchner et al., Silicon Wafer Bonding via Designed Monolayers, 7 Advanced Materials 7, 662 (1995) Download | |
| Oct 2, 2018 | 1001 | U.S. Patent No. 8,153,505 ("the "505 Patent") Download | |
| Oct 2, 2018 | 1003 | Declaration of Dr. Charles Hunt Download | |
| Oct 2, 2018 | 1016 | Elsevier Declaration Regarding Tong (Ex-1009) (Part 2 of 2) Download |
