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Case number IPR2020-00146

Satco Products, Inc. v. Seoul Semiconductor Co., Ltd. et al. > Documents

Date Field Doc. No.PartyDescription
Aug 5, 2021 45 petitioner Petitioner's Notice of Appeal Download
Jun 25, 2021 44 board Final Written Decision Determining No Challenged Claims Unpatentable 35 U.S.C. sec. 318(a) Download
May 5, 2021 43 board Hearing Transcript Download
Apr 6, 2021 1131 petitioner Petitioner's Demonstrative Exhibit Download
Apr 6, 2021 41 patent_own Patent Owner's Demonstratives Download
Apr 6, 2021 42 petitioner Petitioner's Third Updated Exhibit List Download
Mar 19, 2021 40 board Order - Setting Oral Argument Download
Mar 12, 2021 1113 petitioner Declaration Of Nicholas A. Brown In Support Of Motion of Petitioner's Motion Under 37 C.F.R. Sect. 42.71 for Rehearing of Sua Sponte Order Withdrawing Pro Hac Vice Admission of Nicholas A. Brown Download
Mar 12, 2021 1114 petitioner Affidavit For Pro Hac Vice Application Submitted In Signify North America Corporation et al. v. Satco Products, Case No. 2:19-cv-06125 (E.D.N.Y.) Download
Mar 12, 2021 1115 petitioner Local Rules of the United States District Courts for the Southern and Eastern Districts of New York (Excerpts) Download
Mar 12, 2021 1116 petitioner Affidavit For Pro Hac Vice Application Submitted In Seoul Semiconductor Co., Ltd. et al. v. Satco Products, Inc., Case No. 1:19-cv-06719 (E.D.N.Y.) Download
Mar 12, 2021 1117 petitioner Certification By Counsel To Be Admitted Pro Hac Vice Submitted In Elm 3DS Innovations LLC v. SK hynix Inc., et al., Case No. 1:14-cv-01432 (D.Del.) Download
Mar 12, 2021 1118 petitioner Local Rules Of Civil Practice And Procedure Of The United States District Court For The District of Delaware (Excerpts) Download
Mar 12, 2021 1119 petitioner Certification For Pro Hac Vice Application Submitted In By Counsel To Be Admitted Pro Hac Vice Submitted In Battery Conservation Innovations, LLC v. Segway Inc., Case No. 1:19-cv-00850 (D.Del.). Download
Mar 12, 2021 1120 petitioner Affidavit For Pro Hac Vice Application Submitted In Seoul Semiconductor Co., Ltd. et al v. Satco Products, Inc., Case No. 2:19-cv-04951 (E.D.N.Y.) Download
Mar 12, 2021 1121 petitioner Motion To Appear Pro Hac Vice And Certification Submitted In Seoul Semiconductor Co., Ltd. et al. v. Satco Products, Inc., Case No. 1:19-cv-21507 (S.D.Fla.) Download
Mar 12, 2021 1122 petitioner Local Rules Of The United States District Court for the Southern District of Florida (Excerpts) Download
Mar 12, 2021 1123 petitioner Affidavit For Pro Hac Vice Application Submitted In RELX Inc. v. Informatica Corp., Case No. 1:16-cv-09718 (S.D.N.Y.) Download
Mar 12, 2021 1124 petitioner Certificate Of Good Standing, Supreme Court of the United States Download
Mar 12, 2021 1125 petitioner Application For Admission To Practice, Supreme Court of the United States Download
Mar 12, 2021 1126 petitioner Certificate Of Good Standing, United States District Court, Eastern District of Texas Download
Mar 12, 2021 1127 petitioner Local Rules Of The United States District Court for the Eastern District of Texas (Excerpts) Download
Mar 12, 2021 1128 petitioner Declaration of Michael E. McCabe, Jr. in Support of Petitioner's Motion Under 37 C.F.R. Sect. 37 C.F.R. 42.71 for Rehearing of Sua Sponte Order Withdrawing Pro Hac Vice Admission of Nicholas A. Brown Download
Mar 12, 2021 1129 petitioner ABA Model Rule on Pro Hac Vice Admission (Aug. 12, 2002) Download
Mar 12, 2021 1130 petitioner ABA Model Rule on Pro Hac Vice Admission (Feb. 11, 2013) Download
Mar 12, 2021 36 petitioner Petitioner's Second Updated Mandatory Notices Download
Mar 12, 2021 37 petitioner Petitioner's Second Updated Power of Attorney Download
Mar 12, 2021 38 petitioner Petitioner's Motion Under 37 C.F.R. Sect. 42.71 for Rehearing of Sua Sponte Order Withdrawing Pro Hac Vice Admission of Nicholas A. Brown Download
Mar 12, 2021 39 petitioner Petitioner's Second Updated Exhibit List Download
Mar 9, 2021 35 patent_own Download
Mar 3, 2021 2019 patent_own Exhibit 2019 Download
Mar 3, 2021 2020 patent_own Exhibit 2020 Download
Mar 3, 2021 34 patent_own Patent Owner's Sur-Reply Download
Feb 26, 2021 33 board ORDER - Withdrawing Pro Hac Vice Admission of Nicholas A. Brown 37 C.F.R. 42.10c Download
Feb 17, 2021 31 petitioner Petitioner's Request for Oral Hearing Download
Feb 17, 2021 32 patent_own Patent Owner's Request for Oral Argument Download
Jan 26, 2021 28 patent_own Patent Owner's Notice of Deposition of F. Ponce Download
Jan 26, 2021 29 patent_own Patent Owner's Notice of Deposition of R. Dupuis Download
Jan 26, 2021 30 patent_own Patent Owner's Objections to Petitioner's Evidence Download
Jan 19, 2021 1059 petitioner Seoul Semiconductor Co., Ltd. v. Healthe, Inc., No. 6:19-cv-02264-PGB-EJK, Dkt. 55 (Dec. 23, 2020) (Joint Pre-Hearing Statement) Download
Jan 19, 2021 1060 petitioner Seoul Semiconductor Co., Ltd. v. Vividgro, Inc., No. 6:19-cv-02263-CEM-EJK, Dkt. 55 (Dec. 23, 2020) (Joint Pre-Hearing Statement) Download
Jan 19, 2021 1061 petitioner U.S. Patent No. 8,847,254 to Roth, et al. Download
Jan 19, 2021 1062 petitioner U.S. Patent No. 8,405,304 to Choi et al. Download
Jan 19, 2021 1063 petitioner U.S. Patent No. 10,622,525 to Kim et al. Download
Jan 19, 2021 1064 petitioner Transcript of the Deposition of William Alan Doolittle, Ph.D. (Dec. 10, 2020) with errata sheet Download
Jan 19, 2021 1065 petitioner Download
Jan 19, 2021 1066 petitioner Declaration of Fernando Ponce, Ph.D. Download
Jan 19, 2021 1067 petitioner U.S. Patent No. 8,334,157 to Smeeton et al. Download
Jan 19, 2021 1068 petitioner U.S. Patent No. 7,858,962 to Smith et al. Download
Jan 19, 2021 1069 petitioner Y K Su, et al., InGaN/GaN blue light-emitting diodes with self-assembled quantum dots, Semicond. Sci. Technol. 19 (2004) 389-392 Download
Jan 19, 2021 1070 petitioner T. Li, et al., Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope, Appl. Phys. Lett. 86, 241911 (2005) Download
Jan 19, 2021 1071 petitioner Declaration of Russell D. Dupuis, Ph.D. in Response to Declaration of Alan Doolittle, Ph.D. Download
Jan 19, 2021 1072 petitioner S. Nakamura, T. Mukai, and M. Senoh, Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes, Appl. Phys. Lett. 64, 1687-1689. Download
Jan 19, 2021 1073 petitioner S. Nakamura, InGaN/AlGaN double-heterostructure blue LEDs Download
Jan 19, 2021 1074 petitioner S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66, 1249-1251 (1994) Download
Jan 19, 2021 1075 petitioner F. A. Ponce, D. P. Bour, W. Gotz, and P. J. Wright, Spatial distribution of the luminescence in GaN thin films. Appl. Phys. Lett. 68, 57-59 (1996). Download
Jan 19, 2021 1076 petitioner F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond, eds. Gallium Nitride and Related Materials. Materials Research Society (Pittsburgh, Pennsylvania, 1996); Vol. 395, pp. 1-995 (ISBN 1-55899-298-7) Download
Jan 19, 2021 1077 petitioner F. A. Ponce, T. D. Moustakas, I. Akasaki, B. Monemar, eds. III-V Nitrides. Materials Research Society (Pittsburgh, Pennsylvania, 1997); Vol. 449, pp. 1-1251 (ISBN 1-55899-353-3). Download
Jan 19, 2021 1078 petitioner F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, S. Strite, eds. Nitride Semiconductors. Materials Research Society (Pittsburgh, Pennsylvania, 1998); Vol. 482, pp. 1-1224 (ISBN 1-55899-387-8) Download
Jan 19, 2021 1079 petitioner F. A. Ponce and A. Bell, eds. Advances in Nitride Semiconductors Download
Jan 19, 2021 1080 petitioner F. A. Ponce, Defects and Interfaces in GaN Epitaxy. MRS Bull. 22, 51-57 (1997). Download
Jan 19, 2021 1081 petitioner F. A. Ponce, D. Cherns, W. T. Young, and J. W. Steeds, Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques. Appl. Phys. Lett. 69, 770-772 (1996). Download
Jan 19, 2021 1082 petitioner D. Cherns, S. J. Henley, and F. A. Ponce, Edge and screw dislocations as non-radiative centers in InGaN/GaN quantum well luminescence. Appl. Phys. Lett. 78, 2691-2693 (2001). Download
Jan 19, 2021 1083 petitioner S. Chichibu, K. Wada, and S. Nakamura, Luminescences from localized states in InGaN epilayers. Appl. Phys. Lett. 70, 2822-2824 (1997). Download
Jan 19, 2021 1084 petitioner S. Chichibu, K. Wada, and S. Nakamura, Spatially resolved cathodoluminescence spectra of InGaN quantum wells. Appl. Phys. Lett. 71, 2346-2348 (1997). Download
Jan 19, 2021 1085 petitioner Download
Jan 19, 2021 1086 petitioner Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, Y. Narukawa, T. Mukai, and S. Fujita, In inhomogeneity and emission characteristics of InGaN. J. Phys.: Condens. Matter 13, 6993-7010 (2001). Download
Jan 19, 2021 1087 petitioner I. L. Krestnikov, et al, Quantum dot origin of luminescence in InGaN-GaN structures. Phys. Rev. B 66, 155310 (2002). Download
Jan 19, 2021 1088 petitioner F. A. Ponce, et al, Microstructure and electronic properties of InGaN alloys. Phys. Status Solidi B 240, 273-284 (2003). Download
Jan 19, 2021 1089 petitioner F. A. Ponce, D. Cherns, W. Goetz, and R. S. Kern, Microstructure of InGaN quantum wells. MRS Symp. Proc. 482, 453-458 (1997). Download
Jan 19, 2021 1090 petitioner R. Seguin, et al, Multi-excitonic complexes in single InGaN quantum dots. Appl. Phys. Lett. 84, 4023-4025 (2004). Download
Jan 19, 2021 1091 petitioner Y. Narukawa, Y. Kawakami, M. Funato. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm. Appl. Phys. Lett. 70, 981-983 (1997). Download
Jan 19, 2021 1092 petitioner Download
Jan 19, 2021 1093 petitioner Download
Jan 19, 2021 1094 petitioner O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, Y. Arakawa, Narrow photoluminescence peaks from localized states in InGaN quantum dot structures. Appl. Phys. Lett. 76, 2361-2363 (2000). Download
Jan 19, 2021 1095 petitioner H. Schomig, et al, Probing individual localization centers in an InGaN/GaN quantum well. Phys. Rev. Lett. 92, 106802 (2004). Download
Jan 19, 2021 1096 petitioner G. B. Stringfellow, Microstructures produced during the epitaxial growth of InGaN alloys. J. Crystal Growth 312, 735-749 (2010). Download
Jan 19, 2021 1097 petitioner Q. Li, et al, Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Appl. Phys. Lett. 79, 1810-1812 (2001). Download
Jan 19, 2021 1098 petitioner S. F. Chichibu,et al, Origin of defectinsensitive emission probability of In-containing (Al, In, Ga) N alloy semiconductors, Nature Materials 5, 810-816 (2006). Download
Jan 19, 2021 1099 petitioner A. Rosenauer, et al. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy 111, 1316-1327 (2011) Download
Jan 19, 2021 1100 petitioner T. Li, et al, Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells. Appl. Phys. Lett. 96, 031906 (2010) Download
Jan 19, 2021 1101 petitioner T. Koukoula, et al, Structure and strain state of polar and semipolar InGaN quantum dots, Applied Surface Science 260, 7-12 (2012). Download
Jan 19, 2021 1102 petitioner Y. Li, et al, Surface morphology and optical properties of InGaN quantum dots with varying growth temperature. Mater. Res. Express 7, 015903 (2020). Download
Jan 19, 2021 1103 petitioner H. Xie, et al, Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation. J. Appl. Phys. 120, 034301 (2016). Download
Jan 19, 2021 1104 petitioner H. Xie, et al, Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots. Semicond. Sci. Technol. 32, 055013 (2017). Download
Jan 19, 2021 1105 petitioner P.-Y. Su, et al, Effect of InAs quantum dots capped with GaAs on ordering in Ga0.5In0.5P, J. Appl. Phys. 125, 053104 (2019). Download
Jan 19, 2021 1106 petitioner Download
Jan 19, 2021 1107 petitioner Download
Jan 19, 2021 1108 petitioner Download
Jan 19, 2021 1109 petitioner D. Gerthsen, et al., Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy, phys. stat. sol. (a) 177, 145 (2000) Download
Jan 19, 2021 27 petitioner Petitioner's Reply to Patent Owner's Response Download
Jan 11, 2021 26 patent_own Patent Owner's Updated Mandatory Notices Download
Jan 6, 2021 25 petitioner Joint Stipulation to Extend Due Dates 2-3 Download
Dec 18, 2020 23 petitioner Petitioner's Updated Mandatory Notices Download
Dec 18, 2020 24 petitioner Petitioner's Updated Power of Attorney Download
Dec 16, 2020 22 board Download
Nov 12, 2020 21 petitioner Petitioner's Notice of Deposition of Alan Doolittle, Ph.D. Download
Nov 6, 2020 20 patent_own Patent Owner's Exhibit List Download
Nov 6, 2020 2011 patent_own Exhibit 2011 Download
Nov 6, 2020 2011 patent_own Exhibit 2011 Download
Oct 22, 2020 19 petitioner Petitioner's Objections to Patent Owner's Exhibits Download
Oct 15, 2020 18 patent_own Patent Owner's Response Download
Oct 15, 2020 2012 patent_own Exhibit 2012 Download
Oct 15, 2020 2013 patent_own Exhibit 2013 Download
Oct 15, 2020 2014 patent_own Exhibit 2014 Download
Oct 15, 2020 2015 patent_own Exhibit 2015 Download
Oct 15, 2020 2016 patent_own Exhibit 2016 Download
Oct 15, 2020 2017 patent_own Exhibit 2017 Download
Oct 15, 2020 2018 patent_own Exhibit 2018 Download
Oct 2, 2020 17 board Download
Sep 21, 2020 1056 petitioner Declaration of Scott J. Bornstein in Support of Motion for Pro Hac Vice Admission Download
Sep 21, 2020 1057 petitioner Declaration of Nicholas A. Brown in Support of Motion for Pro Hac Vice Admission Download
Sep 21, 2020 1058 petitioner Declaration of Stephen M. Ullmer in Support of Motion for Pro Hac Vice Admission Download
Sep 21, 2020 14 petitioner Petitioner's Motion for Pro Hac Vice Admission of Scott J. Bornstein Download
Sep 21, 2020 15 petitioner Petitioner's Motion for Pro Hac Vice Admission of Nicholas A. Brown Download
Sep 21, 2020 16 petitioner Petitioner's Motion for Pro Hac Vice Admission of Stephen M. Ullmer Download
Sep 10, 2020 13 patent_own Joint Stipulation to Extend Due Dates 1-3 Download
Aug 12, 2020 12 patent_own Patent Owner's Notice of Deposition Download
Jul 17, 2020 11 petitioner Petitioner's Objections to Patent Owner's Exhibits Download
Jul 2, 2020 10 board Scheduling Order Download
Jul 2, 2020 9 board Trial Instituted Document Download
Apr 14, 2020 2001 Exhibit 2001 Download
Apr 14, 2020 2002 Exhibit 2002 Download
Apr 14, 2020 2003 Exhibit 2003 Download
Apr 14, 2020 2004 Exhibit 2004 Download
Apr 14, 2020 2005 Exhibit 2005 Download
Apr 14, 2020 2006 Exhibit 2006 Download
Apr 14, 2020 2007 Exhibit 2007 Download
Apr 14, 2020 2008 Exhibit 2008 Download
Apr 14, 2020 2009 Exhibit 2009 Download
Apr 14, 2020 2010 Exhibit 2010 Download
Apr 14, 2020 8 Patent Owner's Preliminary Response Download
Mar 20, 2020 7 Patent Owner's Updated Mandatory Notices Download
Jan 27, 2020 6 Corrected Petition for Inter Partes Review of U.S. Patent No. 7,667,225 Download
Jan 14, 2020 5 Notice of Accord Filing Date Download
Dec 27, 2019 3 Patent Owner's Power of Attorney Download
Dec 27, 2019 4 Patent Owner's Mandatory Notices Download
Dec 16, 2019 1 Petition for Inter Partes Review of U.S. Patent No. 7,667,225 Download
Dec 16, 2019 1001 U.S. Patent No. 7,667,225 Download
Dec 16, 2019 1002 Declaration of Dr. Dupuis Download
Dec 16, 2019 1003 File History of U.S. Patent Application No. 12/486,267 Download
Dec 16, 2019 1004 File History of U.S. Patent Application No. 12/541,749 Download
Dec 16, 2019 1005 U.S. Patent No. 7,271,417 to Chen Download
Dec 16, 2019 1006 U.S. Patent Application Publication No. 2006/0081832 A1 to Chen Download
Dec 16, 2019 1007 E. Fred Schubert, LIGHT-EMITTING DIODES (2d Ed. 2006) (cover page, and other assorted pages) Download
Dec 16, 2019 1008 F.A. Ponce, et al., Nitride-based semiconductors for blue and green light-emitting devices, Nature, Vol. 386, pp. 351-359 (Mar. 27, 1997) Download
Dec 16, 2019 1009 K.P. O'Donnell, et al., Origin of Luminescence from InGaN Diodes, Phys. Rev. Lett. Vol. 82, No. 1, pp.237-240 (Jan. 4, 1999) Download
Dec 16, 2019 1010 V. Lemos, et al., Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering, Phys. Rev. Lett., Vol. 84, No. 16, pp. 237-240 (Apr. 17, 2000) Download
Dec 16, 2019 1011 Shih-Wei Feng, et al., Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing, J. Appl. Phys. Vol. 95, No. 10, pp.5388-5395 (May 10, 2004) Download
Dec 16, 2019 1012 Z.C. Feng, et al., Optical and structural investigation on InGaN/GaN multiple quantum well light emitting diodes grown on sapphire by metalorganic chemical vapor deposition, 6th Int'l Conf. on Solid State Lighting, Proc of SPIE Vol. 6337 (2006). Download
Dec 16, 2019 1013 S. Nakamura, The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes, Science Vol. 281, pp.956-961 (Aug. 14, 1998) Download
Dec 16, 2019 1014 Y.-L. Lai, The Influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells, Nanotechnology, Vol. 17, pp.4300-4306 (Aug. 8, 2006) Download
Dec 16, 2019 1015 T. Li, et al., Indium redistribution in an InGaN quantum well induced by electron beam irradiation in a transmission electron microscope, Appl. Phys. Lett. Vol. 86 (2005) (photocopy of paper copy) Download
Dec 16, 2019 1016 Y.-S. Lin, et al., Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells, Appl. Phys. Lett., Vol. 77, pp.2988-2990 (2000) Download
Dec 16, 2019 1017 I.-K. Park, et al., Ultraviolet light emitting diodes with self-assembled InGaN quantum dots, Appl. Phys. Lett., Vol. 90 (2007) Download
Dec 16, 2019 1018 J. Gleize, Tight-Binding Simulation of an InGaN/GaN Quantum Well with Indium Concentration Fluctuation, Phys. Stat. Sol., Vol. 0, No. 1, pp.298-301 (2002) (print) Download
Dec 16, 2019 1019 N.A. Shapiro, et al., The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells, MRS Internet J. of Nitride Semicond. Res., Vol. 5, No. 1 (2000) Download
Dec 16, 2019 1020 P. G. Eliseev, "Blue" temperature-induced shift and band-tail emission in InGaN-based light sources, Appl. Phys. Lett, Vol. 71, pp.569-571 (Aug. 4, 1997) Download
Dec 16, 2019 1021 T. Mukai, et al., Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes, Jpn. Appl. Phys. Vol. 38, pp.3976-3981 (Jul. 1999) Download
Dec 16, 2019 1022 U.S. Patent No. 6,121,634 to Saito et al. Download
Dec 16, 2019 1023 U.S. Patent No. 5,959,307 to Nakamura, et al. Download
Dec 16, 2019 1024 U.S. Patent No. 6,541,797 to Udagawa Download
Dec 16, 2019 1025 Y.S. Lin, et al., Effects of post-growth thermal annealing on the indium aggregated structures in InGaN/GaN quantum wells, J. Crystal Growth Vol. 242, pp. 35-40 (2002) Download
Dec 16, 2019 1026 D. Gerthsen, et al., Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy, phys. Stat. sol. (c), 0 No. 6, pp.1668-1683 (2003) (photocopy) Download
Dec 16, 2019 1027 S. Chichibu, et al., Spontaneous emission of localized excitons in InGaN single and multiple-quantum well structures, Appl. Phys. Lett. 69, p.4188 (1996) Download
Dec 16, 2019 1028 PCT Application Publication WO 00/30178 to Emcore Corp. Download
Dec 16, 2019 1029 Communication dated Mar. 15, 2012 in EP Pat. App. No. 09 010 817.6 Download
Dec 16, 2019 1030 Communication dated Aug. 27, 2012 in EP Pat. App. No. 09 010 817.6 Download
Dec 16, 2019 1031 U.S. Patent No. 6,541,797 to Udagawa Download
Dec 16, 2019 1032 C.H. Kuo, et al., Nitride-based Near-Ultraviolet Multiple Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers, J. Electronic Materials, Vol. 32, No. 5, pp.415-418 (2003) Download
Dec 16, 2019 1033 M.-H. Kim, Origin of efficiency droop in GaN-based light-emitting diodes, Appl. Phys. Lett. 91, 183507 (Oct. 30, 2007) Download
Dec 16, 2019 1034 E. Fred Schubert, LIGHT-EMITTING DIODES (2d Ed. 2006) (pp.27, 35-36, and 44) Download
Dec 16, 2019 1035 D. Gerthsen, et al., Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy, phys. Stat. sol. (c), 0 No. 6, pp.1668-1683 (2003) (web version) Download
Dec 16, 2019 1036 H.-C. Wang, Carrier relaxation in InGaNGaN quantum wells with nanometer-scale cluster structures, Appl. Phys. Lett. 85, 1371 (2004). Download
Dec 16, 2019 1037 J. Gleize, Tight-Binding Simulation of an InGaN/GaN Quantum Well with Indium Concentration Fluctuation, Phys. Stat. Sol., Vol. 0, No. 1, pp.298-301 (2002) (web version) Download
Dec 16, 2019 1038 Y. Li, et al., Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes, phys. stat. sol. (c), 1-3 (2008) (Apr. 23, 2008) Download
Dec 16, 2019 1039 Download
Dec 16, 2019 1040 A. Knauer, et al., Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes, App. Phys. Lett. 91, p.191912 (2008). Download
Dec 16, 2019 1041 Download
Dec 16, 2019 1042 H.W. Huang, et al., Improvement of InGaN-GaN Light-Emitting Diode Performance With a Nano-Roughened p-GaN Surface, IEEE Photonics Tech. Lett., Vol. 17, No. 5, pp.983-985 (May 2005) Download
Dec 16, 2019 1043 T. Li, et al., Indium redistribution in an InGaN quantum well induced by electron beam irradiation in a transmission electron microscope, Appl. Phys. Lett. Vol. 86 (2005) (web copy) Download
Dec 16, 2019 1044 H. K. Cho, et al., Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density, Appl. Phys. Lett., Vol. 79, No. 2, p.215 (Jul. 9, 2001). Download
Dec 16, 2019 1045 Shih-Wei Feng, et al., Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures, J. Appl. Phys., Vol. 92, No. 8, pp.4441-4448 (Oct. 15, 2002) Download
Dec 16, 2019 1046 Yen-Sheng Lin, et al., Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells, Appl. Phys. Lett., Vol. 80, No. 14, pp.2571-2573 (Apr. 2002) Download
Dec 16, 2019 1047 J. P. Liu, Investigations on V-defects in quaternary AlInGaN epilayers, Appl. Phys. Lett., Vol. 84, No. 26, pp.5449-5451 (Jun. 28, 2004). Download
Dec 16, 2019 1048 M. Feneberg, Mahan excitons in degenerate wurtzite InN: Photluminescense spectroscopy and reflectivity measurements Download
Dec 16, 2019 1049 M. Rakel, et al., GaN and InN conduction-band states by ellipsometry Download
Dec 16, 2019 1050 B. Witzigmann, et al., Analysis of Temperature-Dependent Optical Gain in GaN-InGaN Quantum-Well Structures, IEEE Photonics Tech. Lett., Vol. 18, No. 15, pp.1600-1602 (Aug. 1, 2006). Download
Dec 16, 2019 1051 S.-N. Lee, et al., Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells, J. Crystal Growth, 310, pp.3881-3883 (Jun. 8, 2008) Download
Dec 16, 2019 1052 S.-N. Lee, Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD, J. Crystal Growth 275, pp.e1041-1045 (Dec. 18, 2004) Download
Dec 16, 2019 1053 S.C.P. Rodrigues, et al., Luminescence studies on nitride quaternary alloys double quantum wells, Applied Surface Science 254 (2008) 7790-7792. Download
Dec 16, 2019 1054 Declaration of Dr. Hall-Ellis Download
Dec 16, 2019 1055 P. Schley, et al., Dielectric function and Van Hove singularities for In-rich InxGa1-xN alloys: Comparison of N- and metal-face materials, Phys. Rev. B 75, 205204 (2007) Download
Dec 16, 2019 2 Petitioner's Power of Attorney Download
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