Optimized floating P region photodiode for a CMOS image sensor | Patent Number 06486521
US 06486521 B2Filled DateOct 2, 2001
Priority DateNov 15, 1999
Publication DateFeb 14, 2002
Expiration DateNov 15, 2019
Inventor/ApplicantsDatong Chen
Datong Chen
Xinping He
Xinping He
Tiemin Zhao
Tiemin Zhao
Datong Chen
Xinping He
Xinping He
Tiemin Zhao
Tiemin Zhao
ExaminesWILSON, SCOTT R
Art Unit2826
Technology Center2800
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