Optimized floating P region photodiode for a CMOS image sensor | Patent Number 06486521

US 06486521 B2
Application Number9969920
Publication NumberUS 20020017695 A1
Pendency1 year, 1 month, 25 days
Filled DateOct 2, 2001
Priority DateNov 15, 1999
Publication DateFeb 14, 2002
Expiration DateNov 15, 2019
Inventor/ApplicantsDatong Chen
Datong Chen
Xinping He
Xinping He
Tiemin Zhao
Tiemin Zhao
ExaminesWILSON, SCOTT R
Art Unit2826
Technology Center2800
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