Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate | Patent Number 08120114

US 08120114 B2
Application Number11646764
Publication NumberUS 20080157365 A1
Pendency5 years, 1 month, 27 days
Filled DateDec 27, 2006
Priority DateDec 27, 2006
Publication DateJul 3, 2008
Expiration DateFeb 21, 2020
Inventor/ApplicantsSean King
Andrew Ott
Ajay Sharma
ExaminesPARENDO, KEVIN A
Art Unit2823
Technology Center2800
Assignments
Intel Corporation
Current
Intel Corporation
Original
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