Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon | Patent Number 08491718

US 08491718 B2
Application Number12903750
Publication NumberUS 20110033969 A1
Pendency2 years, 9 months, 14 days
Filled DateOct 13, 2010
Priority DateMay 28, 2008
Publication DateFeb 10, 2011
Expiration DateMay 27, 2028
Inventor/ApplicantsPia Chaudhari
Ashok Chaudhari
Karin Chaudhari
Praveen Chaudhari
ExaminesSONG, MATTHEW J
Art Unit1714
Technology Center1700
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