Capping dielectric structure for transistor gates | Patent Number 09202699

US 09202699 B2
Application Number13992598
Publication NumberUS 20130248952 A1
Pendency4 years, 2 months, 3 days
Filled DateSep 30, 2011
Priority DateSep 30, 2011
Publication DateSep 26, 2013
Expiration DateSep 29, 2031
Inventor/ApplicantsDin-How Mei
Sameer S. Pradhan
Aaron W. Rosenbaum
ExaminesLAIR, SAMUEL L
Art Unit2817
Technology Center2800
Assignments
Daedalus Prime Llc
Current
Intel Corporation
Original
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