Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs | Patent Number 09768339

US 09768339 B2
Application Number15188396
Publication NumberUS 20160372624 A1
Pendency1 year, 3 months
Filled DateJun 21, 2016
Priority DateJun 22, 2015
Publication DateDec 22, 2016
Expiration DateJun 21, 2035
Inventor/ApplicantsKalyan Nunna
Robert Yanka
Howard Williams
Seokjae Chung
Rodney Pelzel
ExaminesYUSHIN, NIKOLAY K
Art Unit2893
Technology Center2800
Assignments
Iqe Plc
Current
Iqe Plc
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