Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon | Patent Number 10056519

US 10056519 B2
Application Number15157539
Publication NumberUS 20160260863 A1
Pendency2 years, 3 months, 5 days
Filled DateMay 18, 2016
Priority DateMay 28, 2008
Publication DateSep 8, 2016
Expiration DateMay 27, 2028
Inventor/ApplicantsAshok Chaudhari
Praveen Chaudhari
ExaminesSONG, MATTHEW J
Art Unit1714
Technology Center1700
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