Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon | Patent Number 10199518

US 10199518 B2
Application Number15457314
Publication NumberUS 20170186893 A1
Pendency1 year, 10 months, 29 days
Filled DateMar 13, 2017
Priority DateMay 28, 2008
Publication DateJun 29, 2017
Expiration DateMay 27, 2028
Inventor/ApplicantsAshok Chaudhari
Praveen Chaudhari
ExaminesSONG, MATTHEW J
Art Unit1714
Technology Center1700
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