Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon | Patent Number 10199529

US 10199529 B2
Application Number14979285
Publication NumberUS 20160111584 A1
Pendency3 years, 1 month, 16 days
Filled DateDec 22, 2015
Priority DateMay 28, 2008
Publication DateApr 21, 2016
Expiration DateMay 27, 2028
Inventor/ApplicantsAshok Chaudhari
Praveen Chaudhari
ExaminesSONG, MATTHEW J
Art Unit1714
Technology Center1700
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