Method and device isolation structure in finFET | Patent Number 10755965
US 10755965 B2Filled DateNov 25, 2019
Priority DateMay 2, 2018
Publication DateMar 19, 2020
Expiration DateMay 1, 2038
Inventor/ApplicantsMin Gyu Sung
ExaminesSEFER, AHMED N
Art Unit2893
Technology Center2800
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