Phase change random access memory device | Patent Number 11765988

US 11765988 B2
Application Number17571260
Publication NumberUS 20220140235 A1
Pendency1 year, 8 months, 15 days
Filled DateJan 7, 2022
Priority DateNov 28, 2017
Publication DateMay 5, 2022
Expiration DateNov 27, 2037
Inventor/ApplicantsChen-Hui YANG
Yu-Chuan Hsu
Chen-Hui Yang
Chun-Hsu YEN
Chun-Hsu Yen
Yu-Chuan HSU
ExaminesVALENZUELA, PATRICIA D
Art Unit2819
Technology Center2800
Assignments
Taiwan Semiconductor Manufacturing Company
Current
Taiwan Semiconductor Manufacturing Company
Original
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