Method of fabricating super-junction based vertical gallium nitride JFET and MOSFET power devices | Patent Number 11824086

US 11824086 B2
Application Number18085985
Publication NumberUS 20230127978 A1
Pendency11 months, 5 days
Filled DateDec 21, 2022
Priority DateJun 18, 2020
Publication DateApr 27, 2023
Expiration DateJun 17, 2040
Inventor/ApplicantsClifford Drowley
Hao Cui
ExaminesBOOTH, RICHARD A
Art Unit2812
Technology Center2800
Assignments
Semiconductor Components Industries
Current
Nexgen Power Systems Inc.
Original
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