Multi-layered semiconductive device and methodology with polymer and transition metal dichalcogenide material | Patent Number 11908690

US 11908690 B2
Application Number17619514
Publication NumberUS 20220246430 A1
Pendency3 years, 8 months, 6 days
Filled DateJun 19, 2020
Priority DateJun 20, 2019
Publication DateAug 4, 2022
Expiration DateJun 19, 2039
Inventor/ApplicantsEric Pop
Sam Vaziri
Alwin S. Daus
ExaminesDULKA, JOHN P
Art Unit2895
Technology Center2800
Assignments
Stanford University
Current
Stanford University
Original
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