Semiconductor apparatuses and methods involving diamond and GaN-based FET structures | Patent Number 11961837

US 11961837 B2
Application Number17571128
Publication NumberUS 20220223586 A1
Pendency2 years, 3 months, 10 days
Filled DateJan 7, 2022
Priority DateJan 8, 2021
Publication DateJul 14, 2022
Expiration DateJan 7, 2041
Inventor/ApplicantsMohamadali Malakoutian
Matthew A. Laurent
Srabanti Chowdhury
Chenhao Ren
Siwei Li
ExaminesRODRIGUEZ VILLAN, SANDRA MILENA
Art Unit2898
Technology Center2800
Assignments
Stanford University
Current
The Regents Of The University Of California
Original
Stanford University
Original
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